Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs by Chleirigh, C. Ni, Gomez, Leonardo, Hashemi, Pouya, Hoyt, Judy L.

“…The hole mobility characteristics of 〈110〉 /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied. Uniaxial mechanical strain is applied to biaxial compressive strained devices and the relative change in effective hole mobility is measured. …”
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A generic gate driver for SiC MOSFETs with adjustable positive and negative rail voltage by Li, Yeo Howe, Kanamarlapudi, Venkata Ravi Kishore

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Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology by See, Kwang Seng

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Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing by Boo, A. A., Ang, Diing Shenp

“…A similar observation (reported elsewhere) applies to the HfO2 gate p-MOSFET, implying that the observed hole-trap transformation is a common mechanism for bulk trap generation across different gate oxide technologies. …”
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Degradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stress by Liao, Hong, Hu, Hang, Su, Hao, Wang, Hong

“…In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and Rn under maximum substrate current IB, max stress or hot hole injection Hinj than hot electron injection Einj. …”
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SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T by Nicholas, R, Stradling, R, Portal, J, Perrier, P, Askenazy, S

Optimization of N-Channel trench power MOSFET using 2k factorial design method by Nur Syakimah Ismail, Ibrahim Ahmad, Hafizah Husain

“…The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. …”

Characterisation of a MOSFET-based detector for dose measurement under megavoltage electron beam radiotherapy by Jong, Wei Loong, Ung, Ngie Min, Tiong, Aaron H.L., Rosenfeld, Anatoly B., Wong, Jeannie Hsiu Ding

Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application by Saad, Ismail, Hamzah, Mohd. Zuhir, Seng, Chanbun, Khairul, A. M., Ghosh, Bablu, Bolong, Nurmin, Ismail, Razali

“…An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). …”

Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress by Juraj Marek, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova, Martin Weis

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Numerical simulation analysis of CMOS compatible process of 50nm vertical single and double gate MOSFET / by Ismail Said, author, Razali Ismail, 1960-, author, International Conference on Advancement of Materials and Nanotechnology (2007: Pulau Langkawi, Kedah)

Process and device simulation for MOSFET fabrication using virtual wafer fab-athena and atlas software [microfilm] / by Marina Mesran

Numerical analysis of double gate (DG)vertical MOSFETs incorporating dielectric pocket (DP) in nanoscale regime / by Ismail Saad, autho, Zul Atfyi FauzanM> N, autho, Munawar a. Riyadi, autho, RazaliIsmail, autho, Regional Annual Fundamental Science Seminar(2008: Johor)

Velocity field characteristics in quasi-two-dimensional (q2d) systems: application to nano-mosfet / by 277693 Lee, Aaron Chii Enn, Vijay K. Arora, supervisor, Fakulti Kejuruteraan Elektrik

Temperature effects to electrical characterization of N-mosfet using pspice simulator /cChung Yen Ting by 333880 Chung, Yen Ting, Hazri Bakhtiar, Fakulti Sains

Mosfet in circuit design : metal-oxide semiconductor field effect transistor for discrete and integrated-circuit technology/ by 185408 Crawford, Robert H.

Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / by Muhamad Syahir Tumaran, 1987-, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik

Design and analysis of double gate vertical MOSFET (VMOSFET) comparison between source on top and drain on top / by 554353 Ungku Noor Yasmin Ungku Mohd. Yunus, Nurul Ezaila Alias, supervisor, Fakulti Kejuruteraan Elektrik

Performance evaluation of 3-d n-chanel and p-channel twin silicon nanowire mosfet (TSNWFET) / by Muhammad Nurhaziq Haridan, 1993-, author, Nurul Ezaila Alias, supervisor, Fakulti Kejuruteraan Elektrik

Gate driver power supply arrangement for cascode‐connected super‐junction MOSFETs in a bridge‐leg by Neville McNeill, Andrew Hopkins, Barry W. Williams

“…Abstract This letter presents a circuit for powering cascode gate driver circuits with super‐junction (SJ) MOSFETs in a bridge‐leg. The cascode gate driver gives inherent MOSFET intrinsic diode deactivation, and the bridge‐leg incorporates an inductive turn‐on snubber which controls the charging currents into the MOSFETs’ output capacitances. …”
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