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Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
Published 2012“…The hole mobility characteristics of 〈110〉 /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied. Uniaxial mechanical strain is applied to biaxial compressive strained devices and the relative change in effective hole mobility is measured. …”
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A generic gate driver for SiC MOSFETs with adjustable positive and negative rail voltage
Published 2020Subjects: Get full text
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Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing
Published 2013“…A similar observation (reported elsewhere) applies to the HfO2 gate p-MOSFET, implying that the observed hole-trap transformation is a common mechanism for bulk trap generation across different gate oxide technologies. …”
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Journal Article -
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Degradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stress
Published 2013“…In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and Rn under maximum substrate current IB, max stress or hot hole injection Hinj than hot electron injection Einj. …”
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SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T
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Optimization of N-Channel trench power MOSFET using 2k factorial design method
Published 2009“…The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. …”
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Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application
Published 2014“…An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). …”
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Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress
Published 2022-11-01Subjects: Get full text
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Gate driver power supply arrangement for cascode‐connected super‐junction MOSFETs in a bridge‐leg
Published 2022-12-01“…Abstract This letter presents a circuit for powering cascode gate driver circuits with super‐junction (SJ) MOSFETs in a bridge‐leg. The cascode gate driver gives inherent MOSFET intrinsic diode deactivation, and the bridge‐leg incorporates an inductive turn‐on snubber which controls the charging currents into the MOSFETs’ output capacitances. …”
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Article