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521
4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
Published 2021-06-01Subjects: Get full text
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522
A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching
Published 2023-06-01Subjects: “…SiC MOSFET…”
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523
Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices
Published 2022-10-01Subjects: “…Metal oxide semiconductor field effect transistor (MOSFET)…”
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524
Testing and Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN Applications
Published 2022-08-01Subjects: Get full text
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525
Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters
Published 2022-12-01Subjects: Get full text
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526
Modelling and optimization of SiC MOSFET switching voltage and current overshoots in a half‐bridge configuration
Published 2021-07-01“…Abstract Due to the high‐speed switching, the switching process of a silicon carbide (SiC) metal oxide field effect transistor (MOSFET) in a practical circuit is susceptible to parasitics and exhibits significant current and voltage overshoots. …”
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527
A Basic Design Tool for Grid-Connected AC–DC Converters Using Silcon Carbide MOSFETs
Published 2023-11-01“…In order to validate the proposed design tool, four AC–DC converters using SiC MOSFETs were designed. Based on the design results, simulation models and prototypes were fabricated to verify the performance and confirm that the proposed design tool can be used in the basic design process of converters.…”
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528
Remaining Useful Lifetime Prediction Based on Extended Kalman Particle Filter for Power SiC MOSFETs
Published 2023-04-01Subjects: “…SiC MOSFETs…”
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529
Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs
Published 2020-12-01“…This work primarily focuses on the degradation degree of bulk current (<i>I<sub>B</sub></i>) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the drain-avalanche-hot-carrier test, and uses a lifetime model to extract the lifetime of the tested devices. …”
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530
Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device
Published 2015-12-01Subjects: Get full text
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531
Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs
Published 2023-01-01Subjects: Get full text
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532
Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State
Published 2022-09-01Subjects: “…power SiC-MOSFETs…”
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533
Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles
Published 2021-09-01Subjects: Get full text
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534
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
Published 2020-10-01“…We propose to use a bilayer insulator (2.5 nm Al<sub>2</sub>O<sub>3</sub> + 35 nm SiO2) as an alternative to a conventional uni-layer Al<sub>2</sub>O<sub>3</sub> (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. …”
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535
A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET
Published 2023-07-01Subjects: Get full text
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536
Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating
Published 2022-03-01Subjects: Get full text
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537
Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs
Published 2021-07-01“…Abstract The single event burnout (SEB) effects of SiC power MOSFET are investigated by irradiations. An SEB is observed when drain biased above 400 V for 181Ta ion irradiation. …”
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538
A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique
Published 2023-12-01Subjects: Get full text
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539
Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
Published 2020-08-01“…A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. …”
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540
A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance
Published 2023-05-01Subjects: “…silicon carbide (SiC) trench MOSFET…”
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Article