4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics by Jaeyeop Na, Jinhee Cheon, Kwangsoo Kim

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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching by Ping Li, Jingwei Guo, Shengdong Hu, Zhi Lin

Subjects: “…SiC MOSFET…”
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Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices by Lubin Han, Lin Liang, Yijian Wang, Xinling Tang, Song Bai

Subjects: “…Metal oxide semiconductor field effect transistor (MOSFET)…”
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Testing and Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN Applications by Elliot O. Omoru, Viranjay M. Srivastava

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Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters by Jaechang Kim, Sangshin Kwak, Seungdeog Choi

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Modelling and optimization of SiC MOSFET switching voltage and current overshoots in a half‐bridge configuration by Lina Wang, Haobo Ma, Hongcheng Qiu, Kai Yuan, Zhuang Liu, Guoen Cao

“…Abstract Due to the high‐speed switching, the switching process of a silicon carbide (SiC) metal oxide field effect transistor (MOSFET) in a practical circuit is susceptible to parasitics and exhibits significant current and voltage overshoots. …”
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A Basic Design Tool for Grid-Connected AC–DC Converters Using Silcon Carbide MOSFETs by Myoungho Kim, Hyeok-Jin Yun

“…In order to validate the proposed design tool, four AC–DC converters using SiC MOSFETs were designed. Based on the design results, simulation models and prototypes were fabricated to verify the performance and confirm that the proposed design tool can be used in the basic design process of converters.…”
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Remaining Useful Lifetime Prediction Based on Extended Kalman Particle Filter for Power SiC MOSFETs by Wei Wu, Yongqian Gu, Mingkang Yu, Chongbing Gao, Yong Chen

Subjects: “…SiC MOSFETs…”
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Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs by Chii-Wen Chen, Mu-Chun Wang, Cheng-Hsun-Tony Chang, Wei-Lun Chu, Shun-Ping Sung, Wen-How Lan

“…This work primarily focuses on the degradation degree of bulk current (<i>I_B</i>) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the drain-avalanche-hot-carrier test, and uses a lifetime model to extract the lifetime of the tested devices. …”
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Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device by K.E. Kaharudin, F. Salehuddin, A.S.M. Zain, M.N.I. Abd Aziz

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Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs by Stefano Bonaldo, Serena Mattiazzo, Marta Bagatin, Alessandro Paccagnella, Giovanni Margutti, Simone Gerardin

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Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State by Krzysztof Górecki, Paweł Górecki

Subjects: “…power SiC-MOSFETs…”
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Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles by Hsien-Chie Cheng, Siang-Yu Lin, Yan-Cheng Liu

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Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability by Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

“…We propose to use a bilayer insulator (2.5 nm Al₂O₃ + 35 nm SiO2) as an alternative to a conventional uni-layer Al₂O₃ (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. …”
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A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET by JiaWen Li, Xin Yang, Mengwei Xu, Xiaodi Wang, Ke Heng

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Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating by Zhenmin Liu, Na Chen, Yong Liu, Zhenyi Chen, Fufei Pang, Tingyun Wang

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Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs by Chao Peng, Zhifeng Lei, Ziwen Chen, Shaozhong Yue, Zhangang Zhang, Yujuan He, Yun Huang

“…Abstract The single event burnout (SEB) effects of SiC power MOSFET are investigated by irradiations. An SEB is observed when drain biased above 400 V for 181Ta ion irradiation. …”
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A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique by Baozhu Wang, Hongyi Xu, Na Ren, Hengyu Wang, Kai Huang, Kuang Sheng

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Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability by Young Jun Yoon, Jae Sang Lee, Dong-Seok Kim, Jung-Hee Lee, In Man Kang

“…A gallium nitride (GaN)-based normally off metal–oxide–semiconductor field-effect transistor (MOSFET) using a dual-metal-gate (DMG) structure was proposed and fabricated to improve current drivability. …”
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A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance by Lijuan Wu, Mengyuan Zhang, Jiahui Liang, Mengjiao Liu, Tengfei Zhang, Gang Yang

Subjects: “…silicon carbide (SiC) trench MOSFET…”
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