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541
Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress
Published 2023-02-01Subjects: Get full text
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542
A MOSFET-Based Method for Measuring Peak Kilovoltage (kVp) in Diagnostic X-Ray Beams
Published 2022-01-01Subjects: Get full text
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543
Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter
Published 2018-11-01Subjects: “…SiC MOSFET…”
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544
RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling
Published 2024-02-01Subjects: Get full text
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545
Active Hybrid Solid State Transformer Based on Multi-Level Converter Using SiC MOSFET
Published 2018-12-01“…The converter is composed of the back-to-back converter using silicon carbide (SiC) metal-oxide semiconductor field effect transistor (MOSFET). Proposed system has a wider voltage and power flow control range, lower filter size, and simpler control sequence than existing AHSST systems. …”
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546
Analytical Model of Subthreshold Swing for Junctionless Double Gate MOSFET Using Ferroelectric Negative Capacitance Effect
Published 2023-01-01“… An analytical Subthreshold Swing (SS) model is presented to observe the change in the SS when a stacked SiO2-metal-ferroelectric structure is used as the oxide film of a JunctionLess Double Gate (JLDG) MOSFET. The SS of 60 mV/dec or less is essential to reduce power dissipation while maintaining transistor performance. …”
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547
An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
Published 2022-01-01Subjects: “…Power <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc>…”
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548
Application of the Hybrid Analytical Model for Approximation of the Current-Voltage Characteristics of MOSFETs in a Wide Temperature Range
Published 2014-01-01“…Cooling a device allows improvement of the basic characteristics and the reliability of MOSFETs i.e. increasing a transconductance of the MOSFET and reducing self-noise. …”
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549
A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters
Published 2020-08-01“…However, because of the poor performance of Si MOSFETs, the efficiency of active clamp forward converters is difficult to further improved. …”
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550
Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey
Published 2024-04-01Subjects: Get full text
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551
A Novel Dielectric Modulated Misaligned Double-Gate Junctionless MOSFET as a Label-Free Biosensor
Published 2023-05-01“…The proposed biosensor combines the advantages of being junctionless, as well as possessing double and misaligned gate MOSFETs, which results in improved sensitivity and selectivity for biological recognition. …”
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552
A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs
Published 2019-04-01Subjects: “…SiC MOSFET…”
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553
A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers
Published 2021-01-01Subjects: Get full text
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554
Design of Cylindrical Surrounding Double-Gate MOSFET With Fabrication Steps Using a Layer-by-Layer Approach
Published 2022-01-01Subjects: “…cylindrical surrounding double-gate (CSDG) MOSFET…”
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555
Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation
Published 2017-04-01Subjects: Get full text
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556
A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode
Published 2021-01-01Subjects: Get full text
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557
Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction
Published 2019-09-01“…Random parameter variations have been an influential factor that deciding the performance of a metal-oxide-semiconductor field effect transistor (MOSFET), especially in nano-scale regime. Thus, controlling the variation of those parameters becomes extremely crucial in order to attain an acceptable performance of an ultra-small MOSFET. …”
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558
A passive compensator for imbalances in current sharing of parallel‐siC MOSFETs based on planar transformer
Published 2021-11-01“…To tackle the challenge of imbalanced current sharing problem between parallel SiC MOSFETs, a new passive compensator based on planar transformer (PT) is proposed here. …”
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559
In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
Published 2021-11-01“…The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. …”
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560
Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Published 2021-06-01Subjects: Get full text
Article