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561
Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts
Published 2020“…Recently, sub-10-nm-diameter InGaAs vertical nanowire (VNW) MOSFETs have been demonstrated. The key to this achievement was the use of Ni for the top ohmic contact. …”
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562
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563
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564
High electron mobility germanium MOSFETs: Effect of n-type channel implants and ozone surface passivation
Published 2010“…In this study we demonstrate two methods for improving the performance of Ge nFETs, ozone surface passivation and ntype ion-implantation. Surface-channel nMOSFETs receiving a combination of O[subscript 3] passivation and 1*10[superscript 12] dose As or Sb implants show mobility comparable to the highest reported to date with improved subthreshold slope. …”
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565
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566
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567
The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping
Published 2019“…Prevenient studies of the positive bias temperature instability degradation in the high-κ n-MOSFET indicate that oxygen vacancy (VO) is the dominant defect type that responds for the shallow electron trapping. …”
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Journal Article -
568
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569
Ultra-low power high efficient rectifiers with 3T/4T double-gate MOSFETs for RFID applications
Published 2012“…Recently, multi-gate MOSFETs such as double-gate MOSFETs have been identified as inevitable inclusion for future nano-scale circuit design. …”
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Conference Paper -
570
Safe operating condition and lifetime estimation in p-MOSFET device due to negative bias temperature instability
Published 2011“…Negative Bias Temperature Instability is a serious reliability concerns for modern p-MOSFETs with Effective Oxide Thickness less than 2nm. …”
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Conference or Workshop Item -
571
Electrical performance of 0.5 µm MOSFET on bond-and-etch-back silicon-on-insulator(BESOI) substrate
Published 2002“…0.5 µm gate length MOSFET is fabricated on Bond-and-Etch-Back Silicon-On-Insulator (BESOI) substrate using bulk CMOS technology. …”
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Conference or Workshop Item -
572
Using curve-fitting optimisation technique to estimate power MOSFET model parameters for PECT II system
Published 1998“…This paper presents a proposed new structure of the power MOSFET model and its implementation in the HSPICE and PECT II (Power Electronics and Control Tool) packages. …”
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Conference or Workshop Item -
573
Simulation and Analysis of Short Channel Effects on Bulk and Tri-Gate Multiple Input Floating Gate Mosfet
Published 2008“…While the scaling limits of MOSFET have been widely researched, the scaling of Multiple Input Floating Gate (MIFG) MOSFET devices has been receiving less attention. …”
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Thesis -
574
Feasibility Of Using Ebt2 Radiochromic Film And Mosfet For Radiotherapy Dose Measurement In Nasopharynx Cancer Treatment
Published 2017“…Thus, both Radiochromic EBT2 film and MOSFET were suitable to be used as radiotherapy…”
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Thesis -
575
Numerical simulation analysis of CMOS compatible process of 50nm vertical single and double gate MOSFET
Published 2007“…Vertical MOSFET's have been proposed in the roadmap of semiconductor as a candidate for sub-100 nm CMOS technologies. …”
Conference or Workshop Item -
576
Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS)
Published 2015“…In this work, single and dual channel SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully analyzed. Presence of the SiGe channel, it improved the I ON /I OFF ratio, subthreshold slope for the Dual Channel VESIMOS. …”
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Conference or Workshop Item -
577
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method
Published 2008“…A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. …”
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578
MFMIS Negative Capacitance FinFET Design for Improving Drive Current
Published 2020-09-01Subjects: Get full text
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579
Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs
Published 2023-10-01Subjects: Get full text
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580
Field Effect Transistor with Nanoporous Gold Electrode
Published 2023-05-01Subjects: “…MOSFET…”
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Article