Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts by Zhao, Xin, Heidelberger, Christopher, Fitzgerald, Eugene A, Lu, Wenjie, Vardi, Alon, del Alamo, Jesus A

“…Recently, sub-10-nm-diameter InGaAs vertical nanowire (VNW) MOSFETs have been demonstrated. The key to this achievement was the use of Ni for the top ohmic contact. …”
Get full text

Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate by Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Chi, D.Z., Fitzgerald, Eugene A., Antoniadis, Dimitri A.

Get full text

Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator by Åberg, Ingvar

Get full text

High electron mobility germanium MOSFETs: Effect of n-type channel implants and ozone surface passivation by Hennessy, J., Antoniadis, Dimitri A.

“…In this study we demonstrate two methods for improving the performance of Ge nFETs, ozone surface passivation and ntype ion-implantation. Surface-channel nMOSFETs receiving a combination of O[subscript 3] passivation and 1*10[superscript 12] dose As or Sb implants show mobility comparable to the highest reported to date with improved subthreshold slope. …”
Get full text
Get full text

MOSFET channel engineering using strained Si and strained Ge grown on SiGe virtual substrates by Lee, Minjoo Lawrence, 1976-

Get full text

High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization by Leitz, Christopher W. (Christopher William), 1976-

Get full text

The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping by Gu, Chenjie, Zhou, Canliang, Ang, Diing Shenp, Ju, Xin, Gu, Renyuan, Duan, Tianli

“…Prevenient studies of the positive bias temperature instability degradation in the high-κ n-MOSFET indicate that oxygen vacancy (VO) is the dominant defect type that responds for the shallow electron trapping. …”
Get full text
Get full text

Negative-bias temperature instability (NBTI) characterization of MOSFETS employing decoupled-plasma-nitrided gate oxides by Lai, Simon Chung Sing

Get full text

Ultra-low power high efficient rectifiers with 3T/4T double-gate MOSFETs for RFID applications by Kim, Tony Tae-Hyoung, Vaddi, Ramesh.

“…Recently, multi-gate MOSFETs such as double-gate MOSFETs have been identified as inevitable inclusion for future nano-scale circuit design. …”
Get full text
Get full text

Safe operating condition and lifetime estimation in p-MOSFET device due to negative bias temperature instability by Hussin, H., Soin, N.

“…Negative Bias Temperature Instability is a serious reliability concerns for modern p-MOSFETs with Effective Oxide Thickness less than 2nm. …”
Get full text

Electrical performance of 0.5 µm MOSFET on bond-and-etch-back silicon-on-insulator(BESOI) substrate by Abdullah, Wan Fazlida Hanim, Mohd Sidek, Roslina, Mohd Saari, Shahrul Aman, Ahmad, Mohd Rais

“…0.5 µm gate length MOSFET is fabricated on Bond-and-Etch-Back Silicon-On-Insulator (BESOI) substrate using bulk CMOS technology. …”
Get full text

Using curve-fitting optimisation technique to estimate power MOSFET model parameters for PECT II system by Aris, Ishak, Hulley, Lance Norman, Mariun, Norman, Sahbudin, Ratna Kalos Zakiah

“…This paper presents a proposed new structure of the power MOSFET model and its implementation in the HSPICE and PECT II (Power Electronics and Control Tool) packages. …”
Get full text

Simulation and Analysis of Short Channel Effects on Bulk and Tri-Gate Multiple Input Floating Gate Mosfet by Mohd Maarof, Siti Nuur Basmin

“…While the scaling limits of MOSFET have been widely researched, the scaling of Multiple Input Floating Gate (MIFG) MOSFET devices has been receiving less attention. …”
Get full text

Feasibility Of Using Ebt2 Radiochromic Film And Mosfet For Radiotherapy Dose Measurement In Nasopharynx Cancer Treatment by Eng, Kae Yann

“…Thus, both Radiochromic EBT2 film and MOSFET were suitable to be used as radiotherapy…”
Get full text

Numerical simulation analysis of CMOS compatible process of 50nm vertical single and double gate MOSFET by Saad, Ismail, Ismail, Razali

“…Vertical MOSFET's have been proposed in the roadmap of semiconductor as a candidate for sub-100 nm CMOS technologies. …”

Performance analysis of single and dual channel vertical strained SiGe impact ionization MOSFET (VESIMOS) by Saad, I., Seng, B., Hamzah, Z., Bolong, N., Anuar, K., Ghosh, B., Ismail, R.

“…In this work, single and dual channel SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully analyzed. Presence of the SiGe channel, it improved the I ON /I OFF ratio, subthreshold slope for the Dual Channel VESIMOS. …”
Get full text

Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method by Saad, Ismail, Ismail, Razali

“…A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. …”
Get full text

MFMIS Negative Capacitance FinFET Design for Improving Drive Current by Jinhong Min, Changhwan Shin

Subjects: Get full text

Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs by Lan Lin, Zhongchao Cong, Chunlei Jia

Subjects: Get full text

Field Effect Transistor with Nanoporous Gold Electrode by Ezzat G. Bakhoum, Cheng Zhang

Subjects: “…MOSFET…”
Get full text