Power Relay Based Multiple Device Cryogenic Characterization Method and Results by Yuqi Wei, Maksudul Hossain, Dereje Woldegiorgis, Xia Du, H. Alan Mantooth

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1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer by Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu

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Characterization analysis of a novel approach in fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket / by Munawar Riyadi, author, Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, Ismail Saad, author, Razali Ismail, author, IEEE International Conference on Semiconductor Electronic (2008: Johor)

Silicon pillar thickness effect on vertical double gate MOSFET (VDGM) with oblique rotating implantation (ORI) method / by Munawar Agus Riyadi, 1977-, author, Ismail Saad, author, Razali Ismail, author, IEEE International Conference on Semiconductor Electronics (2008 : Johor)

Mengkaji kesan stress yang merupakan faktor masa penggunaan terhadap pencirian arus voltan n-mosfet / by 438252 Goopi Maniam, Hazri Bakhtiar, Fakulti Sains

Device and circuit-level performance of graphene nanoribbon field-effect transistor with benchmarking against a nano-mosfet / by Wong, Weng Soon, 1988-, author, Tan, Michael Loong Peng, supervisor, Fakulti Kejuruteraan Elektrik

Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC by Hirokatsu Umegami, Toshikazu Harada, Ken Nakahara

“…SiC MOSFETs showed higher performance than Si IGBT regardless of the motor type and test vehicles. …”
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Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics by Hyowon Yoon, Ogyun Seok

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SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance by Hengyu Yu, Limeng Shi, Monikuntala Bhattacharya, Michael Jin, Jiashu Qian, Anant K. Agarwal

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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching by Shengnan Zhu, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, Anant K. Agarwal

Subjects: “…SiC power MOSFET…”
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Perspective of Buried Oxide Thickness Variation on Triple Metal-Gate (TMG) Recessed-S/D FD-SOI MOSFET by Anjali Priya, Nilesh Anand Srivastava, Ram Awadh Mishra

“…Recently, Fully-Depleted Silicon on Insulator (FD-SOI) MOSFETs have been accepted as a favourable technology beyond nanometer nodes, and the technique of Recessed-Source/Drain (Re-S/D) has made it more immune in regards of various performance factors. …”
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Analysis of drain induced barrier lowering for junctionless double gate MOSFET using ferroelectric negative capacitance effect by Hakkee Jung

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A 2V, 32.13nA, fully MOSFET Voltage Limiter for Low Power Applications by H. Rayat, R. Dastanian

“…This paper presents a fully MOSFET DC voltage limiter with low current consumption. …”
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An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications by Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori, José R. Pinheiro

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Design Analysis of SiC-MOSFET Based Bidirectional SSPC for Aircraft High Voltage DC Distribution Network by Fatma A. Khera, Serhiy Bozhko, Pat Wheeler

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10 kV SiC MOSFET Based Medium Voltage Power Conditioning System for Asynchronous Microgrids by Ruirui Chen, Fei Wang, Leon M. Tolbert, Xingxuan Huang, Dingrui Li, Cheng Nie, Min Lin, Shiqi Ji, Li Zhang, James Everette Palmer, William Giewont

“…This article presents development and testing of a 10 kV SiC MOSFET based MV PCS for 13.8 kV ASMG. MV PCS converter design addressing high dv/dt issue generated by fast switching of the 10 kV SiC MOSFET is presented. …”
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Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs From Room-Temperature to Cryogenic Temperatures by Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li

“…We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation <inline-formula> <tex-math notation="LaTeX">${T}\,\,=$ </tex-math></inline-formula> 300 K &#x2013; 4.5 K. …”
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A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET by Hongyan Zhao, Jiangui Chen, Yan Li, Fei Lin

Subjects: “…SiC MOSFET…”
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LCL Trap Filter Analysis with a PFC Isolated Ćuk Converter Using SiC MOSFET for DCM by Erdal Şehirli

“…The main contribution of the paper concerns the use of an LCL trap filter with a PFC isolated Ćuk converter. Further, SiC MOSFET is used with a PFC isolated Ćuk converter designed for 50 W with 42 kHz in DCM. …”
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Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET by Jae-Sub Ko, Cheol-Woong Choi, Woong Kul Lee, Dae-Kyong Kim

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