Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors by Mario Lauritano, Peter Baumgartner, Ahmet Çağri Ulusoy

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Sifat-sifat saput tipis Yttrium oksida sebagai insulator dalam transistor kesan medan logam-oksida-semikonduktor (MOSFET) / by 412959 Rozana Mohd Shah, Samsudi Sakrani, supervisor, Fakulti Sains

“…Dua transistor MOSFET dari jenis saput tipis difabrikasi di makmal dalam bentuk sesatah dan beperingkat. …”

Self-aligned double-gate (DG) vertical MOSFET's using oblique rotating implantation (ORI) method with reduced parasitic capacitance / by Ismail Saad, author, Munawar A. Riyadi, author, Razali Ismail, author, Vijay K. Arora, author, IEEE International Conference on Semiconductor Electronics (2008 : Johor)

Design of nanoscale vertical impact ionization metal oxide semiconductor field effect transistor (MOSFET) for short channel effect control / by Muhammad Aiman Md. Shariff, 1988-, author, Razali Ismail, 1960-, supervisor, Fakulti Kejuruteraan Elektrik

Penggunaan "Altera flex10k Educational Board" bagi memaparkan kelakuan operasi sesuatu transistor berjenis Mosfet [microform] / by Ahmad Muzri Mohamed Nuri, Fakulti Kejuruteraan Elektrik

Device and circuit-level performance of graphene nanoribbon field-effect transistor with benchmarking against a nano-mosfet [electronic resource] / by Wong, Weng Soon, 1988-, author

Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design by Tony T. Kim, Rajendra P. Agarwal, Sudeb Dasgupta, Ramesh Vaddi

“…Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. …”
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SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss by Shenglong Ran, Zhiyong Huang, Shengdong Hu, Han Yang

Subjects: “…SiC MOSFET…”
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Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations by Pierpaolo Dini, Sergio Saponara, Sajib Chakraborty, Farzad Hosseinabadi, Omar Hegazy

“…The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC MOSFET, which incorporates the dynamics of both electrical and thermal variables. …”
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A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance by Jaeyeop Na, Kwangsoo Kim

Subjects: “…SiC MOSFET…”
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TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus by Luis Miguel Prócel, Lionel Trojman

Subjects: “…SOI-MOSFET…”
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Total Ionizing Dose Effects of ⁶⁰Co γ-Ray Radiation on Split-Gate SiC MOSFETs by Haonan Feng, Xiaowen Liang, Xiaojuan Pu, Yutang Xiang, Teng Zhang, Ying Wei, Jie Feng, Jing Sun, Dan Zhang, Yudong Li, Xuefeng Yu, Qi Guo

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Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density by Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Mengyu Ma, Hao Yu, Xubo Song, Aimin Bu, Zhihong Feng

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Capacitive Measurements of SiO₂ Films of Different Thicknesses Using a MOSFET-Based SPM Probe by Hoontaek Lee, Kumjae Shin, Wonkyu Moon

“…We utilized scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films that were several hundred nanometers in thickness. …”
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High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric by Ma Yuanchen, Ren Zeyang, Yang Shiqi, Su Kai, Zhang Jinfeng, Yang Xiaoli, Ning Xiuxiu, Zhang Jincheng, Hao Yue

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A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics by Hao Wu, Xuan Li, Xiaochuan Deng, Yangyang Wu, Jiawei Ding, Wensong Peng, Bo Zhang

Subjects: “…SiC trench MOSFET…”
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Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module by Min-Ki Kim, Sang Won Yoon

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Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits by Billel Smaani, Yacin Meraihi, Fares Nafa, Mohamed Salah Benlatreche, Hamza Akroum, Saida Latreche

Subjects: “…double-gate mosfet…”
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2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface by Bing Qiao, Pengfei Dai, Xinxin Yu, Zhonghui Li, Ran Tao, Jianjun Zhou, Rui Shen, Tangsheng Chen

“…This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. …”
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Design and Analysis of Heavily Doped n⁺ Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications by Namrata Mendiratta, Suman Lata Tripathi, Sanjeevikumar Padmanaban, Eklas Hossain

“…Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensors are used for detecting various enzymes, molecules, pathogens and antigens efficiently with a less time-consuming process involved in comparison to other options. …”
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