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701
Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors
Published 2023-07-01Subjects: Get full text
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702
Sifat-sifat saput tipis Yttrium oksida sebagai insulator dalam transistor kesan medan logam-oksida-semikonduktor (MOSFET) /
Published 1994“…Dua transistor MOSFET dari jenis saput tipis difabrikasi di makmal dalam bentuk sesatah dan beperingkat. …”
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703
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704
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705
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707
Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design
Published 2011-07-01“…Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. …”
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708
SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss
Published 2022-02-01Subjects: “…SiC MOSFET…”
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709
Experimental Characterization and Electro-Thermal Modeling of Double Side Cooled SiC MOSFETs for Accurate and Rapid Power Converter Simulations
Published 2023-01-01“…The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC MOSFET, which incorporates the dynamics of both electrical and thermal variables. …”
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710
A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance
Published 2022-12-01Subjects: “…SiC MOSFET…”
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711
TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus
Published 2014-06-01Subjects: “…SOI-MOSFET…”
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712
Total Ionizing Dose Effects of <sup>60</sup>Co γ-Ray Radiation on Split-Gate SiC MOSFETs
Published 2023-05-01Get full text
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713
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714
Capacitive Measurements of SiO<sub>2</sub> Films of Different Thicknesses Using a MOSFET-Based SPM Probe
Published 2021-06-01“…We utilized scanning probe microscopy (SPM) based on a metal-oxide-silicon field-effect transistor (MOSFET) to image interdigitated electrodes covered with oxide films that were several hundred nanometers in thickness. …”
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715
High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
Published 2023-12-01Subjects: Get full text
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716
A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics
Published 2023-12-01Subjects: “…SiC trench MOSFET…”
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717
Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module
Published 2020-11-01Subjects: Get full text
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718
Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits
Published 2021-12-01Subjects: “…double-gate mosfet…”
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719
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface
Published 2024-01-01“…This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. …”
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720
Design and Analysis of Heavily Doped n<sup>+</sup> Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications
Published 2020-04-01“…Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensors are used for detecting various enzymes, molecules, pathogens and antigens efficiently with a less time-consuming process involved in comparison to other options. …”
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Article