Non‐contact and anti‐interference diagnosis of SiC MOSFET module bond wire faults for EV wireless charging device by Mingyao Ma, Ning Wang, Hanyu Wang, Weisheng Guo, Hai Wang

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An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures by Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal

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Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs by Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal

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Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices between Planar and Trench Structures by Lei Shu, Huai-Lin Liao, Zi-Yuan Wu, Yan-Yan Li, Xing-Yu Fang, Shi-Wei Liang, Tong-De Li, Liang Wang, Jun Wang, Yuan-Fu Zhao

Subjects: “…SiC MOSFET…”
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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss by Sicheng Liu, Xiaoyan Tang, Qingwen Song, Yuehu Wang, Ruijie Bai, Yimen Zhang, Yuming Zhang

“…Abstract In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. …”
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Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module by Amol Deshpande, Riya Paul, Asif Imran Emon, Zhao Yuan, Hongwu Peng, Fang Luo

“…This paper informs the design guidelines, fabrication process, and evaluation of a 1.7-kV and 300-A multi-chip half bridge power module using the novel Si-IGBT and SiC-MOSFET hybrid switch in each switch position. The module achieves its maximum DC current rating with a 6:1 current ratio of Si to SiC. …”
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Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET by Bartosz Lasek, Przemysław Trochimiuk, Rafał Kopacz, Jacek Rąbkowski

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The Effect of SiC-MOSFET Characteristics on the Performance of Dielectric Barrier Discharge Plasma Actuators with Two-Stroke Charge Cycle Operation by Shintaro Sato, Tomoki Yoshikawa, Naofumi Ohnishi

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Optimal design of kelvin source SiC MOSFET based PFC considering inductor parasitic capacitance and source mutual inductance by Haihong Qin, Xiang Liu, Xiang Han, Sixuan Xie, Baigen Xu, Ziyue Zhu

Subjects: “…Kelvin source siC MOSFET…”
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High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics by Hennessy, John, 1980-

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Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design by Kim, Tony Tae-Hyoung, Vaddi, Ramesh., Agarwal, Rajendra P., Dasgupta, Sudeb.

“…Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. …”
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Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design by Vaddi, Ramesh., Agarwal, Rajendra P., Dasgupta, Sudeb., Kim, Tony Tae-Hyoung

“…Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more otpimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. …”
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Sifat-sifat saput tipis yttrium oksida sebagai insulator dalam transistor kesan medan logam-oksida-semikonduktor (MOSFET) by Mohd. Shah, Rozana

Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a nano-MOSFET with interconnects by Chin, Huei Chaeng, Lim, Cheng Siong, Wong, Weng Soon, Danapalasingam, Kumeresan A., Arora, Vijay K., Tan, Michael Loong Peng

“…GNRFET can overcome the short-channel effects that are prevalent in sub-100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. …”

n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology by Edmundo A. Gutierrez-D., Alan Y. Otero C., F. Xiomara Ribero

Subjects: “…nMOSFET…”
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Microstructures of HfO_x Films Prepared via Atomic Layer Deposition Using La(NO₃)₃·6H₂O Oxidants by Seon Yong Kim, Yong Chan Jung, Sejong Seong, Taehoon Lee, In-Sung Park, Jinho Ahn

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Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics<sub/><italic/> by Bo-Jhih Chou, Yu-Cheng Chang, Wen-Hao Chang, Chao-Hsin Chen

Subjects: “…MOSFET…”
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Recent trends in silicon carbide device research by Munish Vashishath

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New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications by Pushkar Srivastava, R. K. Sharma, R. K. Gupta, Firat Kacar, Rajeev Kumar Ranjan

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Analysis of static behavior of ion sensitive field effect Transistor for pH measurements by Kevkić Tijana, Maity Reshmi, Todorović Dragana, Vučković Biljana, Maity N. P.

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