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721
Non‐contact and anti‐interference diagnosis of SiC MOSFET module bond wire faults for EV wireless charging device
Published 2023-11-01Subjects: Get full text
Article -
722
An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures
Published 2024-01-01Subjects: Get full text
Article -
723
Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs
Published 2024-03-01Subjects: Get full text
Article -
724
Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices between Planar and Trench Structures
Published 2023-06-01Subjects: “…SiC MOSFET…”
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Article -
725
A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss
Published 2021-08-01“…Abstract In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. …”
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Article -
726
Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridge power module
Published 2022-10-01“…This paper informs the design guidelines, fabrication process, and evaluation of a 1.7-kV and 300-A multi-chip half bridge power module using the novel Si-IGBT and SiC-MOSFET hybrid switch in each switch position. The module achieves its maximum DC current rating with a 6:1 current ratio of Si to SiC. …”
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Article -
727
Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
Published 2021-03-01Subjects: Get full text
Article -
728
The Effect of SiC-MOSFET Characteristics on the Performance of Dielectric Barrier Discharge Plasma Actuators with Two-Stroke Charge Cycle Operation
Published 2022-11-01Subjects: Get full text
Article -
729
Optimal design of kelvin source SiC MOSFET based PFC considering inductor parasitic capacitance and source mutual inductance
Published 2022-11-01Subjects: “…Kelvin source siC MOSFET…”
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Article -
730
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731
Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
Published 2011“…Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. …”
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Journal Article -
732
Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
Published 2012“…Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more otpimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. …”
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Journal Article -
733
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734
Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a nano-MOSFET with interconnects
Published 2014“…GNRFET can overcome the short-channel effects that are prevalent in sub-100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. …”
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735
n-MOS Transistor Impact Ionization Boosted by Cumulative Stress Degradation in a 250-nm SiGe BiCMOS Technology
Published 2023-01-01Subjects: “…nMOSFET…”
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Article -
736
Microstructures of HfO<sub>x</sub> Films Prepared via Atomic Layer Deposition Using La(NO<sub>3</sub>)<sub>3</sub>·6H<sub>2</sub>O Oxidants
Published 2021-12-01Subjects: Get full text
Article -
737
Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics<sub/><italic/>
Published 2022-01-01Subjects: “…MOSFET…”
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Article -
738
Recent trends in silicon carbide device research
Published 2008-08-01Subjects: Get full text
Article -
739
New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications
Published 2024-01-01Subjects: Get full text
Article -
740
Analysis of static behavior of ion sensitive field effect Transistor for pH measurements
Published 2022-01-01Subjects: Get full text
Article