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741
Development of a boost-inverter converter under electromagnetic compatibility stress equipping a photovoltaic generator
Published 2023-08-01Subjects: Get full text
Article -
742
Overvoltage Protection of Series-Connected 10kV SiC MOSFETs Following Switch Failures in MV 3L-NPC Converter for Safe Fault Isolation and Shutdown
Published 2024-01-01Subjects: Get full text
Article -
743
A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process
Published 2022-09-01Subjects: Get full text
Article -
744
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745
Maximizing Efficiency in Smart Adjustable DC Link Powertrains with IGBTs and SiC MOSFETs via Optimized DC-Link Voltage Control
Published 2023-05-01Subjects: “…silicon carbide (SiC) MOSFET…”
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Article -
746
Intraoperative Neurovascular Bundle Preservation with Hyaluronic Acid during Radical Brachytherapy for Localized Prostate Cancer: Technique and MicroMosfet In Vivo Dosimetry
Published 2022-04-01“…Conclusions: This newly created space decreases absorbed dose in the NB, calculated with the TPS and measured by microMOSFET due to the thickness of HA.…”
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Article -
747
Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor
Published 2020-07-01“…A comparative analysis of various SOI bolometers revealed the largest responsivity (<i>R<sub>v</sub></i>) of 5.16 kV/W for the n-channel MOSFET bolometer although the negative ETF in MOSFET reduced the <i>R<sub>v</sub></i>. …”
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Article -
748
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749
A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability
Published 2023-11-01Subjects: Get full text
Article -
750
Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar
Published 2023-03-01Subjects: Get full text
Article -
751
Overvoltage Suppression in Initial Charge Control for DC Capacitor Using Multiple Leg Short-Circuits With SiC-MOSFETs in Power Converters
Published 2023-01-01Subjects: Get full text
Article -
752
Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
Published 2022-08-01Subjects: “…SiC power MOSFET…”
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Article -
753
High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric
Published 2023-06-01Subjects: Get full text
Article -
754
A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness
Published 2022-03-01Subjects: Get full text
Article -
755
An enhanced single gate driven voltage‐balanced SiC MOSFET stack topology suitable for high‐voltage low‐power applications
Published 2022-02-01“…Abstract In the fabrication of some high‐voltage low‐power applications, low cost is much concerned, and thus using silicon carbide (SiC) MOSFET stack consisting of series connected low‐voltage devices is preferred rather than using an expensive single high‐voltage device. …”
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Article -
756
Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n<sup>−</sup>/n<sup>+</sup>-Buffer Layer
Published 2022-12-01Subjects: “…super-junction MOSFET…”
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Article -
757
Desat Protection With Ultrafast Response for High-Voltage SiC MOSFETs With High <italic>dv/dt</italic>
Published 2024-01-01Subjects: “…High-voltage SiC MOSFETs…”
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Article -
758
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759
Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
Published 2013“…Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. …”
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Conference Paper -
760
Floating-body effect in partially/dynamically/fully depleted DG/SOI MOSFETs based on unified regional modeling of surface and body potentials
Published 2014“…A compact terminal current/charge model for partially/dynamically/fully depleted (PD)/(DD)/(FD) double-gate (DG) and silicon-on-insulator (SOI) MOSFETs with floating-body (FB) effect based on unified regional modeling of the surface and body potentials is presented. …”
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Journal Article