Development of a boost-inverter converter under electromagnetic compatibility stress equipping a photovoltaic generator by S. Bechekir, A. Zeghoudi, D. Ould-Abdeslam, M. Brahami, H. Slimani, A. Bendaoud

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Overvoltage Protection of Series-Connected 10kV SiC MOSFETs Following Switch Failures in MV 3L-NPC Converter for Safe Fault Isolation and Shutdown by Sanket Parashar, Semih Isik, Nithin Kolli, Raj Kumar Kokkonda, Subhashish Bhattacharya

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A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process by Yaxuan Liu, Xin Zhang, Jingye Sun, Ling Tong, Lingbing Kong, Tao Deng

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Mengkaji kesan dopan di bawah sumber dan parit terhadap pencirian elektrik N-mosfet dengan menggunakan simulasi mofset / by 444868 Mohd. Syafiq Affandi, Hazri Bakhtiar, Fakulti Sains

Maximizing Efficiency in Smart Adjustable DC Link Powertrains with IGBTs and SiC MOSFETs via Optimized DC-Link Voltage Control by Yu Xu, Anton Kersten, Simon Klacar, David Sedarsky

Subjects: “…silicon carbide (SiC) MOSFET…”
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Intraoperative Neurovascular Bundle Preservation with Hyaluronic Acid during Radical Brachytherapy for Localized Prostate Cancer: Technique and MicroMosfet In Vivo Dosimetry by Pedro J. Prada, María Ferri, Juan Cardenal, Ana García Blanco, Elisabeth Arrojo, Javier Anchuelo, Ivan Diaz de Cerio, Pedro Lastra, Alejandro Fernández, Andrés Vázquez, Samuel Ruiz Arrebola

“…Conclusions: This newly created space decreases absorbed dose in the NB, calculated with the TPS and measured by microMOSFET due to the thickness of HA.…”
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Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor by Durgadevi Elamaran, Yuya Suzuki, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, Hiroshi Inokawa

“…A comparative analysis of various SOI bolometers revealed the largest responsivity (<i>R_v</i>) of 5.16 kV/W for the n-channel MOSFET bolometer although the negative ETF in MOSFET reduced the <i>R_v</i>. …”
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Evaluation of silicon MOSFETs and GaN HEMTs in soft‐switched and hard‐switched DC‐DC boost converters for domestic PV applications by Sajad A. Ansari, Jonathan N. Davidson, Martin P. Foster

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A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability by Moufu Kong, Yuanmiao Duan, Bingke Zhang, Ronghe Yan, Bo Yi, Hongqiang Yang

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Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar by Ismail Ataseven, Ilker Sahin, Salih Baris Ozturk

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Overvoltage Suppression in Initial Charge Control for DC Capacitor Using Multiple Leg Short-Circuits With SiC-MOSFETs in Power Converters by Tomoyuki Mannen, Keiji Wada

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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs by Shengnan Zhu, Tianshi Liu, Junchong Fan, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal

Subjects: “…SiC power MOSFET…”
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High frequency single crystalline diamond MOSFET with high temperature (300 °C) ALD grown Al2O3 dielectric by Zeyang Ren, Yuanchen Ma, Shiqi Yang, Xinxin Yu, Jinfeng Zhang, Kai Su, Jincheng Zhang, Hanxue Wang, Yue Hao

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A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness by Xinxin Zuo, Jiang Lu, Xinyu Liu, Yun Bai, Xiaoli Tian, Guodong Cheng, Yidan Tang, Chengyue Yang, Hong Chen

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An enhanced single gate driven voltage‐balanced SiC MOSFET stack topology suitable for high‐voltage low‐power applications by Rui Wang, Asger Bjørn Jørgensen, Stig Munk‐Nielsen

“…Abstract In the fabrication of some high‐voltage low‐power applications, low cost is much concerned, and thus using silicon carbide (SiC) MOSFET stack consisting of series connected low‐voltage devices is preferred rather than using an expensive single high‐voltage device. …”
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Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n⁻/n⁺-Buffer Layer by Zhi Lin, Wei Zeng, Da Wang, Ping Li, Shengdong Hu

Subjects: “…super-junction MOSFET…”
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Desat Protection With Ultrafast Response for High-Voltage SiC MOSFETs With High <italic>dv&#x002F;dt</italic> by Xingxuan Huang, Dingrui Li, Min Lin, Leon M. Tolbert, Fred Wang, William Giewont

Subjects: “…High-voltage SiC MOSFETs…”
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Gate-all-around n-MOSFETs with uniaxial tensile strain-induced performance enhancement scalable to sub-10-nm nanowire diameter by Gomez, Leonardo, Hashemi, Pouya, Hoyt, Judy L.

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Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs by Gao, Yuan, Ang, Diing Shenp, Young, C. D., Bersuker, G.

“…Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. …”
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Floating-body effect in partially/dynamically/fully depleted DG/SOI MOSFETs based on unified regional modeling of surface and body potentials by Chiah, Siau Ben, Zhou, Xing

“…A compact terminal current/charge model for partially/dynamically/fully depleted (PD)/(DD)/(FD) double-gate (DG) and silicon-on-insulator (SOI) MOSFETs with floating-body (FB) effect based on unified regional modeling of the surface and body potentials is presented. …”
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