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Analytical Model and Design of Voltage Balancing Parameters of Series-Connected SiC MOSFETs Considering Non-Flat Miller Plateau of Gate Voltage
Published 2022-02-01Subjects: Get full text
Article -
765
Comparación de las técnicas de extracción del voltaje de umbral basadas en la característica gm/ID del MOSFETs.
Published 2017-04-01Subjects: “…Threshold voltage extraction, MOSFET modeling, Gm/ID transconductance efficiency…”
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766
A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness
Published 2021-10-01Subjects: “…SiC MOSFET…”
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767
A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter
Published 2020-09-01Subjects: Get full text
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768
Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling
Published 2021-12-01Subjects: Get full text
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769
Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET
Published 2023-01-01“…Forward back biasing (FBB) technique is considered as a potential solution for aging compensation in silicon on insulator (SOI) MOSFET. However, traditional SOI devices under FBB would suffer from extra off-state leakage current <inline-formula> <tex-math notation="LaTeX">$(I_{\mathrm{ off}})$ </tex-math></inline-formula> and undesirable static power consumption. …”
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770
Characterization of SiO<sub>2</sub>/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
Published 2019-06-01Subjects: Get full text
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771
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772
A PCB-Incorporated Inductor Based Filter Design Solution for Differential Mode Noise of 3-Phase SiC-MOSFET Based VSI
Published 2024-01-01“…This paper proposes a PCB-incorporated inductor based segmented LCLC filter with high SRF value for high-frequency DM noise of SiC-MOSFET based VSI. The filter design is based on mathematical modeling of the DM noise of SiC-MOSFET based VSI. …”
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773
A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs
Published 2019-07-01Subjects: “…silicon-on-insulator MOSFETs…”
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774
Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
Published 2022-03-01Subjects: “…sic mosfet…”
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775
Life-cycle energy demand comparison of medium voltage Silicon IGBT and Silicon Carbide MOSFET power semiconductor modules in railway traction applications
Published 2023-10-01Subjects: “…Silicon carbide MOSFET…”
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776
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777
Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment
Published 2009“…The effective channel length L-eff and total external series resistance R-TOTEXT of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. …”
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Journal Article -
778
Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects
Published 2012“…A new analytical model derived from the Poisson equation for surface potential and threshold voltage (V th), including the Quantum Mechanical Effects (QMEs) is presented for nanoscale strained Si1–x Ge x MOSFETs. Boundary condition approaches are applied in the model. …”
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779
Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects
Published 2016“…An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. …”
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780
Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation
Published 2020“…A charge-based compact model that includes the dynamic depletion behavior for arbitrary doped surrounding gate MOSFET (SRGMOSFET) is presented in this paper. The one-dimensional Poisson's equation is first solved to obtain the continuous explicit solution of the mobile charge density and drain current expression. …”
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