Study on the performance enhancement mechanism of the mosfet device based on Si/SiGe strained silicon / Hashimah Hashim and Ahmad Sabirin Zoolfakar by Hashim, Hashimah, Zoolfakar, Ahmad Sabirin

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Fault tolerance of L1 data cache memory induced by intrinsic parameters fluctuation in sub 10nm UTB-SOI MOSFETs by Ahmed, Rabah Abood

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Design of nanoscale vertical impact ionization metal oxide semiconductor field effect transistor (MOSFET) for short channel effect control [electronic resource] / by Muhammad Aiman Md. Shariff, 1988-, author

Analytical Model and Design of Voltage Balancing Parameters of Series-Connected SiC MOSFETs Considering Non-Flat Miller Plateau of Gate Voltage by Chengmin Li, Runtian Chen, Saizhen Chen, Chushan Li, Haoze Luo, Wuhua Li, Xiangning He

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Comparación de las técnicas de extracción del voltaje de umbral basadas en la característica gm/ID del MOSFETs. by Arturo Fajardo Jaimes

Subjects: “…Threshold voltage extraction, MOSFET modeling, Gm/ID transconductance efficiency…”
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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness by Jongwoon Yoon, Kwangsoo Kim

Subjects: “…SiC MOSFET…”
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A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter by Jacek Rąbkowski, Hubert Skoneczny, Rafał Kopacz, Przemysław Trochimiuk, Grzegorz Wrona

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Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling by Jee-Hun Jeong, Ogyun Seok, Ho-Jun Lee

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Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET by Yijun Qian, Qiang Liu, Jialun Yao, Xiaowei Wang, Amit Kumar Shukla, Fengyu Liu, Tao Wu, Kai Lu, Yemin Dong, Xing Wei, Wenjie Yu, Zhiqiang Mu, Yumeng Yang

“…Forward back biasing (FBB) technique is considered as a potential solution for aging compensation in silicon on insulator (SOI) MOSFET. However, traditional SOI devices under FBB would suffer from extra off-state leakage current <inline-formula> <tex-math notation="LaTeX">$(I_{\mathrm{ off}})$ </tex-math></inline-formula> and undesirable static power consumption. …”
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Characterization of SiO₂/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review by Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

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Research and analysis of electromagnetic interference of a motor drive control system based on PMSM with SiC MOSFET for new energy electric vehicles by Chi Zhang, Chi Zhang, Chi Zhang, Chi Zhang, Chi Zhang, Jasronita Jasni, Jasronita Jasni, Mohd Amran Mohd Radzi, Mohd Amran Mohd Radzi, Norhafiz Azis, Norhafiz Azis, Xiangming He

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A PCB-Incorporated Inductor Based Filter Design Solution for Differential Mode Noise of 3-Phase SiC-MOSFET Based VSI by Vibhav Pandey, Sougata Nayak, Kamalesh Hatua, Subhashish Bhattacharya

“…This paper proposes a PCB-incorporated inductor based segmented LCLC filter with high SRF value for high-frequency DM noise of SiC-MOSFET based VSI. The filter design is based on mathematical modeling of the DM noise of SiC-MOSFET based VSI. …”
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A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs by Chuanzhong Xu, Fei Yu, Gongyi Huang, Wanling Deng, Xiaoyu Ma, Junkai Huang

Subjects: “…silicon-on-insulator MOSFETs…”
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Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter by Slavko Mocevic, Jianghui Yu, Boran Fan, Keyao Sun, Yue Xu, Joshua Stewart, Yu Rong, He Song, Vladimir Mitrovic, Ning Yan, Jun Wang, Igor Cvetkovic, Rolando Burgos, Dushan Boroyevich, Christina DiMarino, Dong Dong, Jayesh Kumar Motwani, Richard Zhang

Subjects: “…sic mosfet…”
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Life-cycle energy demand comparison of medium voltage Silicon IGBT and Silicon Carbide MOSFET power semiconductor modules in railway traction applications by Lucas Barroso Spejo, Innocent Akor, Munaf Rahimo, Renato Amaral Minamisawa

Subjects: “…Silicon carbide MOSFET…”
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A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters by Khakifirooz, A., Nayfeh, Osama M., Antoniadis, Dimitri A.

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Effective channel length and external series resistance models of scaled LDD pMOSFETs operating in a Bi-MOS hybrid-mode environment by Seah, Lionel Siau Hing, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh

“…The effective channel length L-eff and total external series resistance R-TOTEXT of deep submicron lightly doped drain (LDD) pMOSFETs, operating in a Bi-MOS hybrid-mode environment, have been modeled as functions of bias and temperature. …”
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Two dimensional analytical threshold voltage model of nanoscale strained Si/Si1-xGex MOSFETs including quantum mechanical effects by Siew, Kang Eng, Heong, Yau Wei, Anwar, Sohail, Razali, Ismail

“…A new analytical model derived from the Poisson equation for surface potential and threshold voltage (V th), including the Quantum Mechanical Effects (QMEs) is presented for nanoscale strained Si1–x Ge x MOSFETs. Boundary condition approaches are applied in the model. …”

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects by Hamzah, A., Hamid, F. A., Ismail, R.

“…An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. …”

Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation by Hamzah, Afiq, Alias, N. Ezaila, Tan, Michael Loong Peng, Ali Hosseingholipourasl, Ali Hosseingholipourasl, Ismail, Razali

“…A charge-based compact model that includes the dynamic depletion behavior for arbitrary doped surrounding gate MOSFET (SRGMOSFET) is presented in this paper. The one-dimensional Poisson's equation is first solved to obtain the continuous explicit solution of the mobile charge density and drain current expression. …”