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781
Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review
Published 2023-08-01Subjects: Get full text
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782
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783
Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress
Published 2022-12-01Subjects: Get full text
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784
Performance Analysis of Thermal Image Processing-Based Photovoltaic Fault Detection and PV Array Reconfiguration—A Detailed Experimentation
Published 2022-11-01Subjects: Get full text
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785
Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices
Published 2019-12-01Subjects: Get full text
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786
Characterizing Semiconductor Devices for All-Electric Aircraft
Published 2023-01-01Subjects: Get full text
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787
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788
Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation
Published 2023-02-01Subjects: Get full text
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789
Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology
Published 2019-10-01Subjects: Get full text
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790
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791
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792
Analytical models of threshold voltage and drain induced barrier lowering in junctionless cylindrical surrounding gate (JLCSG) MOSFET using stacked high-k oxide
Published 2022-03-01“…We proposed the analytical models to analyze shifts in threshold voltage and drain induced barrier lowering (DIBL) when the stacked SiO2/high-k dielectric was used as the oxide film of Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFET. As a result of comparing the results of the presented model with those of TCAD, it was a good fit, thus proving the validity of the presented model. …”
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793
Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique
Published 2021-09-01Subjects: “…MOSFET…”
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Article -
794
Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS<sub>2</sub>-Based MOSFETs
Published 2023-05-01“…In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS<sub>2</sub>-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. …”
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795
A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer
Published 2024-02-01“…This paper proposes a Si IGBT/SiC MOSFET hybrid isolated bidirectional DC–DC converter and an optimized modulation strategy (OMS) to reduce the losses and costs of DCSST. …”
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796
Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications
Published 2021-01-01“…The analytical result of DH-DD-TM-SG MOSFET is in accordance with the simulated results.…”
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797
Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics
Published 2021-08-01Subjects: “…silicon carbide (SiC) MOSFETs…”
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798
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799
Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
Published 2023-05-01“…Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed.…”
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800