Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review by Ridwanullahi Isa, Jawad Mirza, Salman Ghafoor, Mohammed Zahed Mustafa Khan, Khurram Karim Qureshi

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Surface Dose Measurements on an Indigenously Made Inhomogeneous Female Pelvic Phantom Using Metal-Oxide-Semiconductor-Field-Effect-Transistor Based Dosimetric System by DEEPAK SHROTRIYA, Ram Shbad Yadav, Ram Naresh Lal Srivastava

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Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress by Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi

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Performance Analysis of Thermal Image Processing-Based Photovoltaic Fault Detection and PV Array Reconfiguration—A Detailed Experimentation by Srinivasan Alwar, Devakirubakaran Samithas, Meenakshi Sundaram Boominathan, Praveen Kumar Balachandran, Lucian Mihet-Popa

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Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices by P. Trochimiuk, M. Zdanowski, J. Rabkowski

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Characterizing Semiconductor Devices for All-Electric Aircraft by Abdelrahman Elwakeel, Neville Mcneill, Rafael Pena Alzola, Ravi Kiran Surapaneni, Gowtham Galla, Ludovic Ybanez, Min Zhang, Weijia Yuan

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Nanodevices Tend to Be Round by Georges Pananakakis, Gérard Ghibaudo, Sorin Cristoloveanu

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Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation by Amal Mohamed Ahmed Ali, Naser M. Ahmed, Norlaili A. Kabir, Ahmad M. AL-Diabat, Natheer A. Algadri, Ahmed Alsadig, Osamah A. Aldaghri, Khalid H. Ibnaouf

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Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology by Esteban Tlelo-Cuautle, Perla Rubi Castañeda-Aviña, Rodolfo Trejo-Guerra, Victor Hugo Carbajal-Gómez

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Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET) / by 258235 Kamal Ariffin Jusoh

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A Cascaded Multilevel Inverter Using Only One Battery with High-Frequency Link and Low-Rating-Voltage MOSFETs for Motor Drives in Electric Vehicles by Chao Zhang, Zhigang Gao

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Analytical models of threshold voltage and drain induced barrier lowering in junctionless cylindrical surrounding gate (JLCSG) MOSFET using stacked high-k oxide by Hakkee Jung

“…We proposed the analytical models to analyze shifts in threshold voltage and drain induced barrier lowering (DIBL) when the stacked SiO2/high-k dielectric was used as the oxide film of Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFET. As a result of comparing the results of the presented model with those of TCAD, it was a good fit, thus proving the validity of the presented model. …”
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Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique by Pei-Chen Huang, Chang-Chun Lee

Subjects: “…MOSFET…”
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Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS₂-Based MOSFETs by Atabek E. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov, Jean Chamberlain Chedjou

“…In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS₂-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. …”
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A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer by Jun Huang, Yu Wang, Zhenfeng Li, Hongbo Zhu, Kai Li

“…This paper proposes a Si IGBT/SiC MOSFET hybrid isolated bidirectional DC–DC converter and an optimized modulation strategy (OMS) to reduce the losses and costs of DCSST. …”
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Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications by Neeraj Gupta, Prashant Kumar

“…The analytical result of DH-DD-TM-SG MOSFET is in accordance with the simulated results.…”
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Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics by Ciro Scognamillo, Antonio Pio Catalano, Michele Riccio, Vincenzo d’Alessandro, Lorenzo Codecasa, Alessandro Borghese, Ravi Nath Tripathi, Alberto Castellazzi, Giovanni Breglio, Andrea Irace

Subjects: “…silicon carbide (SiC) MOSFETs…”
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Repetitive Partial Discharge Phenomena on Electrical Motor Coil Windings Under High-Repetition Nanosecond Pulsed Voltages Driven by SiC MOSFET Inverter by Yusuke Kikuchi, Jun Matsusue, Fuma Yamada, Takafumi Okuda, Takashi Nakamura

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Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation by Arnar M. Vidarsson, Daniel Haasmann, Sima Dimitrijev, Einar Ö. Sveinbjörnsson

“…Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed.…”
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Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs by Vinod Pralhad Tayade, Swapnil Laxman Lahudkar

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