A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components by Kewei Wang, Xinyi Zhang, Bo Li, Duoli Li, Fazhan Zhao, Jianhui Bu, Zhengsheng Han

“…Thus, this paper presents a modeling method for the SET current in FDSOI MOSFET where all three components are modeled individually. …”
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Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs by Liu, Wenhu, Padovani, Andrea, Larcher, Luca, Raghavan, Nagarajan, Pey, Kin Leong

“…Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.…”
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A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET by Gu, Chenjie, Ang, Diing Shenp, Gao, Yuan, Gu, Renyuan, Zhao, Ziqi, Zhu, Chao

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Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET) by Jusoh, Kamal Ariffin

“…Transistor used in the study were nLDD-MOSFET (n Lightly Doped Drain MOSFET) type. The transistor technology were from SCMOS 2/RT 0.6 µm prototype MATRA-MHS_TEMIC. …”
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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

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Nonlinear Dynamics in HfO₂/SiO₂-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications by Noriyuki Miyata

Subjects: “…MOSFET…”
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High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs by Mu-Chun Wang, Wen-Ching Hsieh, Chii-Ruey Lin, Wei-Lun Chu, Wen-Shiang Liao, Wen-How Lan

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玻耳兹曼输运模型有限元数值解误差分析的研究 by 童建农, 邹雪城, 沈绪榜

Subjects: “…有限元方法;误差分析;纵向MOSFET;SOI…”
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Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors by Gyeongyeop Lee, Jonghyeon Ha, Kihyun Kim, Hagyoul Bae, Chong-Eun Kim, Jungsik Kim

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VLSI Structures for DNA Sequencing—A Survey by Mohammad A. Islam, Palash K. Datta, Harley Myler

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Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits by Cristina Missel Adornes, Deni Germano Alves Neto, Márcio Cherem Schneider, Carlos Galup-Montoro

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Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair by Heng Yuan, Jixing Zhang, Chuangui Cao, Gangyuan Zhang, Shaoda Zhang

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Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal–Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration by Byeong-Jun Park, Han-Sol Kim, Sung-Ho Hahm

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An Efficient Equalizing Method for Lithium-Ion Batteries Based on Coupled Inductor Balancing by Ali Farzan Moghaddam, Alex Van den Bossche

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A Ćuk Converter Cell Balancing Technique by Using Coupled Inductors for Lithium-Based Batteries by Ali Farzan Moghaddam, Alex Van den Bossche

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Regenerative comparator with floating capacitor for energy‐harvesting applications by Hadi Pahlavanzadeh, Mohammad Azim Karami

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Performance Enhancement of Asymmetrical Double Gate Junctionless CMOS Inverter With 3-nm Critical Feature Size Using Charge Sheet by Mohammad Bavir, Abdollah Abbasi, Ali Asghar Orouji

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Si Industry at a Crossroads: New Materials or New Factories? by Fitzgerald, Eugene A., Leitz, Christopher W., Lee, Minjoo L., Antoniadis, Dimitri A., Currie, Matthew T.

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Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET) [microfilm] /

Design of Half-Bridge Switching Power Module Based on Parallel-Connected SiC MOSFETs for LLC Resonant Converter with Symmetrical Structure and Low Parasitic Inductance by Hae-Chan Park, Sung-Soo Min, Jeong-Ho Lee, Su-Seong Park, Sang-Hyeok Lee, Rae-Young Kim

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