SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter by Carlos D. Fuentes, Marcus Müller, Steffen Bernet, Samir Kouro

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Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration. by Hassan Khalid, Saad Mekhilef, Marif Daula Siddique, Addy Wahyudie, Mahrous Ahmed, Mehdi Seyedmahmoudian, Alex Stojcevski

“…Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions. …”
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Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape by Hashemi, Pouya, Teherani, James T., Hoyt, Judy L.

“…A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-κ/MG and various high-temperature hydrogen annealing processes. …”
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A comparative study of lifetime reliability of planar MOSFET and FinFET due to BTI for the 16 nm CMOS technology node based on reaction-diffusion model by Mahmoud, Mohamed Mounir, Soin, Norhayati

“…However, this scaling is pushing planar MOSFET to its physical limitations. Nowadays, FinFET emerges as a promising alternative technology for planar MOSFET, due to their better efficiency. …”

Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection by Aryan Afzalian, Denis Flandre

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Kesan kepada sifat-sifat elektrik akibat radiasi sinar-gamma dan neutron pada transistor kesan medan logam oksida-silikon (MOSFET) [compact disc] / by 258235 Kamal Ariffin Jusoh

A 2.8 kV Breakdown Voltage α-Ga₂O₃ MOSFET with Hybrid Schottky Drain Contact by Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo

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Evaluation of <i>V</i>_TH and <i>R</i>_ON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs by Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Nicolò Zagni, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini

“…In this paper, we investigate the evolution of threshold voltage (<i>V</i>_TH) and on-resistance (<i>R</i>_ON) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-mode operation. A novel measurement setup for performing the required on-the-fly characterization is presented and the experimental results, obtained on commercially available TO-247 packaged SiC devices, are reported. …”
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Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers by Shen-Li Chen, Yi-Cih Wu

Subjects: “…n-channel lateral-diffused MOSFET (nLDMOS)…”
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Enhancement-Mode Heterojunction Vertical β-Ga₂O₃ MOSFET with a P-Type Oxide Current-Blocking Layer by Yuwen Huang, Xiaoping Xie, Zeyulin Zhang, Peng Dong, Zhe Li, Dazheng Chen, Weidong Zhu, Shenglei Zhao, Qian Feng, Jincheng Zhang, Chunfu Zhang, Yue Hao

Subjects: “…vertical heterojunction MOSFET…”
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Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p⁺n⁻n Diodes: The Road to Reliable Vertical MOSFETs by Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

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تصميم وتنفيذ وحدة قواطع الحالة الثابتة عالية الاستطاعة لمعدِّلات الرادارات النبضية الحديثة اعتماداً على الربط التفرعي لترانزستورات MOSFET ذات الاستطاعة العالية by Mouen Younes, Gadeer Madi, Tayseer al-Isaa

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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology by Guilei Wang, Jun Luo, Jinbiao Liu, Tao Yang, Yefeng Xu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye, Henry H. Radamson

“…Abstract In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. …”
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Observation of MOSFET-like behavior of a TFT based on amorphous oxide semiconductor channel layer with suitable integration of atomic layered deposited high-k gate dielectrics by Kelsea A. Yarbrough, Makhes K. Behera, Jasmine Beckford, Sangram K. Pradhan, Messaoud Bahoura

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Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm by Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology

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A Bond Graph Approach for the Modeling and Simulation of a Buck Converter by Rached Zrafi, Sami Ghedira, Kamel Besbes

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In Vivo Dosimetry for Superficial High Dose Rate Brachytherapy with Optically Stimulated Luminescence Dosimeters: A Comparison Study with Metal-Oxide-Semiconductor Field-Effect Tra... by Alana Lopes, Eric Sabondjian, Alejandra Rangel Baltazar

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A Tool for Evaluating the Performance of SiC-Based Bidirectional Battery Chargers for Automotive Applications by Giuseppe Aiello, Mario Cacciato, Francesco Gennaro, Santi Agatino Rizzo, Giuseppe Scarcella, Giacomo Scelba

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Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications by S. Bharthuar, S. Bharthuar, M. Golovleva, M. Golovleva, M. Bezak, M. Bezak, E. Brücken, A. Gädda, A. Gädda, J. Härkönen, J. Härkönen, A. Karadzhinova-Ferrer, A. Karadzhinova-Ferrer, N. Kramarenko, N. Kramarenko, S. Kirschenmann, S. Kirschenmann, P. Koponen, P. Luukka, P. Luukka, K. Mizohata, J. Ott, J. Ott, E. Tuominen, E. Tuominen

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Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters by Amal Mohamed Ahmed Ali, Naser M. Ahmed, Norlaili A. Kabir, Mohammed Khalil Mohammed Ali, Hanan Akhdar, Osamah A. Aldaghri, Khalid Hassan Ibnaouf, Abdelmoneim Sulieman

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