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821
SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter
Published 2021-05-01Subjects: Get full text
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822
Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration.
Published 2023-01-01“…Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions. …”
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823
Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape
Published 2012“…A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-κ/MG and various high-temperature hydrogen annealing processes. …”
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824
A comparative study of lifetime reliability of planar MOSFET and FinFET due to BTI for the 16 nm CMOS technology node based on reaction-diffusion model
Published 2019“…However, this scaling is pushing planar MOSFET to its physical limitations. Nowadays, FinFET emerges as a promising alternative technology for planar MOSFET, due to their better efficiency. …”
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825
Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection
Published 2023-06-01Subjects: Get full text
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826
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827
A 2.8 kV Breakdown Voltage α-Ga<sub>2</sub>O<sub>3</sub> MOSFET with Hybrid Schottky Drain Contact
Published 2024-01-01Subjects: Get full text
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828
Evaluation of <i>V</i><sub>TH</sub> and <i>R</i><sub>ON</sub> Drifts during Switch-Mode Operation in Packaged SiC MOSFETs
Published 2021-02-01“…In this paper, we investigate the evolution of threshold voltage (<i>V</i><sub>TH</sub>) and on-resistance (<i>R</i><sub>ON</sub>) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-mode operation. A novel measurement setup for performing the required on-the-fly characterization is presented and the experimental results, obtained on commercially available TO-247 packaged SiC devices, are reported. …”
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829
Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers
Published 2018-10-01Subjects: “…n-channel lateral-diffused MOSFET (nLDMOS)…”
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830
Enhancement-Mode Heterojunction Vertical β-Ga<sub>2</sub>O<sub>3</sub> MOSFET with a P-Type Oxide Current-Blocking Layer
Published 2022-02-01Subjects: “…vertical heterojunction MOSFET…”
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831
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832
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833
pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology
Published 2017-04-01“…Abstract In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. …”
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834
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835
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836
A Bond Graph Approach for the Modeling and Simulation of a Buck Converter
Published 2018-01-01Subjects: Get full text
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837
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838
A Tool for Evaluating the Performance of SiC-Based Bidirectional Battery Chargers for Automotive Applications
Published 2020-12-01Subjects: Get full text
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839
Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications
Published 2022-01-01Subjects: Get full text
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840
Investigation of X-ray Radiation Detectability Using Fabricated ZnO-PB Based Extended Gate Field-Effect Transistor as X-ray Dosimeters
Published 2021-11-01Subjects: Get full text
Article