EXPERIMENTAL MODEL OF SINGLE-PHASE DC–DC BOOST CONVERTER FOR 1000 WP PHOTOVOLTAIC APPLICATION by Handoko Rusiana Iskandar, Muhammad Rizky Alfarizi, Ajie Prasetya, Nana Heryana

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EOT sub-nanometric and degradation of mobility: moving towards a physical limit with modern manufacturing techniques? by Lionel Trojman, Luigi Pantisano, José Bustamante, Santiago Navarro

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Comparative Analysis of Modulation Techniques on the Losses and Thermal Limits of Uninterruptible Power Supply Systems by Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori, José R. Pinheiro

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Thermal synergies in 50 nanometer CMOS and below by F.S. Shoucair

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A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET by Xinfeng Nie, Ying Wang, Chenghao Yu, Xinxing Fei, Jianqun Yang, Xingji Li

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Analysis of DC-Side Snubbers for SiC Devices Application by Mei Liang, Jiwen Chen, Pengyu Jia

Subjects: “…SiC MOSFET…”
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High-Frequency and High-Voltage Asymmetric Bipolar Pulse Generator for Electroporation Based Technologies and Therapies by Eva Pirc, Damijan Miklavčič, Katja Uršič, Gregor Serša, Matej Reberšek

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Research on Establishment and Application of Digital Twin for a Phase-Shift Full-Bridge Current Doubling Rectifier Converter by Guihua Liu, Xinyang Wang, Mingyi Wang, Wei Wang

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On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si by Chung, Jinwook, Lu, Bin, Palacios, Tomas

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Corrections to “Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge” by Dayana A. Pino-Monroy, Patrick Scheer, Mohamed Khalil Bouchoucha, Carlos Galup-Montoro, Manuel J. Barragan, Philippe Cathelin, Jean-Michel Fournier, Andreia Cathelin, Sylvain Bourdel

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Design of Enhancement Mode <italic>&#x03B2;</italic>-Ga&#x2082;O&#x2083; Vertical Current Aperture MOSFETs With a Trench Gate by Xiaoqing Chen, Feng Li, Herbert Hess

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SiC-MOSFET and Si-IGBT-Based dc-dc Interleaved Converters for EV Chargers: Approach for Efficiency Comparison with Minimum Switching Losses Based on Complete Parasitic Modeling by Jelena Loncarski, Vito Giuseppe Monopoli, Giuseppe Leonardo Cascella, Francesco Cupertino

“…The efficiency comparison of the SiC-MOSFET and Si-IGBT-based converters has been done on wide range of switching frequency and output inductances. …”
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Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application by Sneha Narasimhan, Ajit Kanale, Subhashish Bhattacharya, Jayant B. Baliga

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Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3^rd Quadrant Operation by Dongyoung Kim, Nick Yun, Seung Yup Jang, Adam J. Morgan, Woongje Sung

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V_DS and V_GS Depolarization Effect on SiC MOSFET Short-Circuit Withstand Capability Considering Partial Safe Failure-Mode by Yazan Barazi, Frédéric Richardeau, Wadia Jouha, Jean-Michel Reynes

Subjects: “…SiC MOSFET…”
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New Power MOSFET with Beyond-1D-Limit <i>R</i>_SP-<i>BV</i> Trade-Off and Superior Reverse Recovery Characteristics by Meng Zhang, Baikui Li, Jin Wei

Subjects: “…power MOSFET…”
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Comparative analysis of dual active bridge dc–dc converter employing Si, SiC and GaN MOSFETs for G2V and V2G operation by Shishir S. Trivedi, Amit V. Sant

“…This issue can be addressed by employing SiC and GaN-MOSFETs, which work with lesser switching losses and can operate at much higher fsw. …”
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Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS by Xin Yang, Baoxing Duan, Yintang Yang

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GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance by Xin Yang, Baoxing Duan, Yintang Yang

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Low threshold DC–AC power converter with optimized standby power consumption by Tiku Fidelis Etanya, Musong Louis Katche, Pierre Tsafack

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