Current-voltage characteristics and model for short-chanel MOSFET / by Fakrulradzi Idris, 1984-, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik

Semiconductor devices : BJTS, JFETS, MOSFETS and integrated circuits/ by 466652 Nanavati, Rejendra P.

Extraction of SPICE model for double gate vertical MOSFET / by Jatmiko Endro Suseno, author, Muhammad Taghi Ahmadi, author, Munawar Agus Riyadi, author, Razali Ismail, 1960-, author, Asia Modelling Symposium (2009 : Bali, Indonesia)

Sort channel effect of vertical sidewall SOI MOSFET / by Jatmiko E. Suseno, Jatmiko E.Suseno, author, Munawar Agus Riyadi, 1977-, author, IEEE International Conference on Semiconductor Electronics (2008 : Johor)

Mosfet models for VLSI circuit simulation : theory and practice / by 182941 Arora, Narain

Characterization of double gate silicon on insulator (SOI) MOSFET / by Zaharah Johari, 1985-, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik

The effects of neutron radiation to the N-mosfets electrical characteristics / by Nor Aslida Abdul Khalek, 1987-, Hazri Bakhtiar, Fakulti Sains

Simulation of 0.18 micron MOSFET and its characterization / by 398154 Syafeeza Ahmad Radzi

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Design and characterisation of strained silicon MOSFET [electronic resource] / by 275773 Goh, Eunice Shing Mei, Fakulti Kejuruteraan Elektrik

Characterization of tri-material gate n-channel MOSFET / by Nadia Othman, Zaharah Johari, supervisor, Fakulti Kejuruteraan Elektrik

The influence of corner effects in double gate vertical mosfet / by Khalidah Abdullah, 1986-, Nurul Ezaila Alias, supervisor, Fakulti Kejuruteraan Elektrik

Technology computer aided design : simulation for VLSI MOSFET / by Sarkar, Chandan Kumar

Fundamentals of ultra-thin-body MOSFETs and FinFETs / by Fossum, Jerry G., 1943-, author, Trivedi, Vishal P., author

“…"Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"--provided by publisher…”

Electrically Active Defects in SiC Power MOSFETs by Mayank Chaturvedi, Daniel Haasmann, Hamid Amini Moghadam, Sima Dimitrijev

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Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime by Sergej Makovejev, Babak Kazemi Esfeh, François Andrieu, Jean-Pierre Raskin, Denis Flandre, Valeriya Kilchytska

“…The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. …”
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The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction MOSFETs by H. Kang, N. Donato, F. Udrea

“…Fast dI/dt and oscillations often are the causes of failure during the reverse-recovery of superjunction MOSFETs. These issues become more prominent with shrinking the pitch size of the superjunction in an attempt to improve the overall performance from one generation to the next. …”
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Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs by Teng Wang, Xin Wan, Hu Jin, Hao Li, Yabin Sun, Renrong Liang, Jun Xu, Lirong Zheng

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High Frequency Multipurpose SiC MOSFET Driver by Jan Strossa, Vladislav Damec, Martin Sobek, Daniel Kouril, Jakub Baca

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A Non-Intrusive Method for Monitoring the Degradation of MOSFETs by Li-Feng Wu, Yu Zheng, Yong Guan, Guo-Hui Wang, Xiao-Juan Li

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Selected Problems of Power MOSFETs Thermal Parameters Measurements by Krzysztof Górecki, Krzysztof Posobkiewicz

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