New salicidation technology with Ni(Pt) alloy for MOSFETs by Mangelinck, D., Chan, L., Lee, Pooi See, Pey, Kin Leong, Ding, Jun, Chi, Dong Zhi

Get full text
Get full text

teknik Mosfet Dalam Pembuatan Untai Terpadu (IC) by Perpustakaan UGM, i-lib

“…MOSFET dalam teknik pembuatan untai terpadu sangat sesuai kareana mempungai karakteristik sesuai dan mempunyai konstruksi yang paling kecil. …”

TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS by Kressrogers, E, Nicholas, R, Englert, T, Pepper, M

Invited paper: modeling of nanoscale MOSFET using MATLAB by Arora, Vijay K.

“…Quantum and high-field effects present in a nanoscale MOSFET are modeled and data processed using MATLAB. …”

Modeling of temperature variations in MOSFET mismatch for circuit simulations by Ismail, Muhamad Amri, Md. Nasir, Iskhandar, Ismail, Razali

“…This paper presents a MOSFET mismatch model with the consideration of temperature variations using physical based SPICE model parameters. …”

Extraction of SPICE model for double gate vertical MOSFET by Suseno, Jatmiko E., Ahmad, Muhammad Taghi, Riyadi, Munawar A., Ismail, Razali

“…Vertical MOSFETs device have one important disadvantage, which is higher overlap capacitances such as the separated gate-source and gate-drain parasitic capacitances (CGSO and CGDO), which is known to be most crucial to the high-frequency/speed performance but very hard to extract. …”

Artificial intelligence techniques for SPICE optimization of mosfet modeling by E. Suseno, Jatmiko, A Riyadi, Munawar, Alias, Nurul Ezaila, Heong, Yau Wei, Ismail, Razali

“…This paper proposes new method for optimize and verified electric characterization graph of MOSFET by using artificial neural network. Optimization using neural network (ONN) will compare current-voltage (I-V) characteristic graph between the TCAD simulation and TSPICE modeling as desire data control a model parameter of BSIM. …”

Design and simulation analysis of nanoscale vertical MOSFET technology by Saad, Ismail, Mohd. Ali Lee, Razak, A. Riyadi, Munawar, Ismail, Razali

“…Design consideration of vertical MOSFET with double gate structure on each side of insulating pillar for nanodevice applications is presented. …”

Investigation on the effects of halo implants for nanoscale vertical MOSFET by Ismail, Razali, Saad, Ismail, Arora, Vijay

Simulation of 0.18 micron MOSFET and its characterization by Ahmad Radzi, Syafeeza

“…Non-ideal effect of a MOSFET design such as short channel effects is investigated. …”
Get full text

Modelling of nanoscale MOSFET performance in the velocity saturation region by Tan, Micheal Loong Peng, Ismail, Razali

“…Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. …”
Get full text
Get full text

Impact of strain on electrical performance of Silicon Nanowire MOSFET by A. Hamid, Fatimah, Hamzah, Afiq, Mohamad, Azam, Ismail, R., Razali, M. A.

“…A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. …”

An Investigation of Reliability and Life Time Prediction for Power MOSFET Using Electronically and Statistical Technique by Abdul-hasan Abdallah Kadhim, Munaf Fathi Badr, Abdulkhaliq A.AL-Naqeeb

Subjects: “…mosfet transistors…”
Get full text

Modeling of lightly doped drain (LDD) MOSFET for ciruit simulation / by 188525 Mohamed Hanis Hassan, Tan, Michael Loong Peng, Fakulti Kejuruteraan Elektrik

Characterization of silicon - on - insulator (SOI) mosfet using TCAD tools / by 247481 Yeoh, Chun Jern, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik

Characterization of low power delay product MOSFET-like CNFET / by 268738 Chuah, Yen Pin, Abdul Manaf Hashim, Fakulti Kejuruteraan Elektrik

The effect of different ge concentration on the characteristics of strain silicon MOSFET / by Razali Ismail, 1960-, author, Wong, Yah Jin, 1983-, author, Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru)

The physics and modeling of MOSFETs : surface-potential model HiSIM / by 240092 Miura-Mattausch, Mitiko, Mattausch, Hans Jurgen, Ezaki, Tatsuya

Numerical investigation of nanoscale and vertical MOSFET incorporating dielectric pocket / by Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, Ismail Saad, 1974-, author, Munawar Agus Riyadi, 1977-, author, Razali Ismail, 1960-, author, Regional Annual Fundamental Science Seminar (2008: Johor)

MOSFET - like carbon nanotube field effect transistor model / by Mohammad Taghi Ahmadi, author, Yau, Wei Heong, 1983-, author, Ismail Saad, author, Razali Ismail, author, NSTI Nanotechnology Conference (2009 : Texas)