Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET by A. Salah, M. El Banna, A. Shaker, M. Ossaimee

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Research on Temperature Dependence of Single-Event Burnout in Power MOSFETs by Chen Wang, Yi Liu, Changqing Xu, Xinfang Liao, Dongdong Chen, Zhenyu Wu

Subjects: “…power MOSFETs…”
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Investigation of 1200 V SiC MOSFETs’ Surge Reliability by Huan Li, Jue Wang, Na Ren, Hongyi Xu, Kuang Sheng

Subjects: “…1200 V SiC MOSFET…”
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The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector by Yingdong Wei, Chenyu Yao, Li Han, Libo Zhang, Zhiqingzi Chen, Lin Wang, Wei Lu, Xiaoshuang Chen

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Comprehensive Analysis of Short circuit Protections for Silicon-Carbide MOSFET by Zhao Jialin

“…The short circuit protection of SIC MOSFET plays an important role in ensuring the reliability and performance of SIC MOSFET. …”
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A gate driver for parallel connected MOSFETs with crosstalk suppression by Yury Mikhaylov, Giampaolo Buticchi, Michael Galea

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Characteristics of mobile MOSFET dosimetry system for megavoltage photon beams by A Sathish Kumar, S D Sharma, B Paul Ravindran

“…The characteristics of a mobile metal oxide semiconductor field effect transistor (mobile MOSFET) detector for standard bias were investigated for megavoltage photon beams. …”
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A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs by Yuanzhao Hu, Fei Liu, Xiaoyan Liu

“…In this work, a self-developed simulator employing a novel numerical processing method to prevent convergence issues, based on semi-classical transport models and including several kinds of mobility, generation and recombination models, is used to investigate the performance and breakdown characteristics of 4H-SiC MOSFETs in high-power applications. Good agreement between our simulator and an experiment and commercial TCAD was achieved. …”
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Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference by Shuzheng Mu, Pak Kwong Chan

“…A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. …”
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COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs by Shree Chakravarthy Devadas, Ramani Kannan

“…The performance of power MOSFET is affected by high thermal stress exposure. …”
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Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s by Jinhee Cheon, Kwangsoo Kim

“…In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. …”
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Suppressing Voltage Spikes of MOSFET in H-Bridge Inverter Circuit by Ezzidin Hassan Aboadla, Sheroz Khan, Kushsairy Abdul Kadir, Zulkhairi Md Yusof, Mohamed Hadi Habaebi, Shabana Habib, Muhammad Islam, Mohammad Kamrul Hasan, Eklas Hossain

“…Power electronics devices are made from semiconductor switches such as thyristors, MOSFETs, and diodes, along with passive elements of inductors, capacitors, and resistors, and integrated circuits. …”
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Investigation into the Effect of Varied Functional Biointerfaces on Silicon Nanowire MOSFETs by Shu-Ping Lin, Tien-Yin Chi, Tung-Yen Lai, Mao-Chen Liu

“…The APTMS-SAM modified NW-MOSFETs showed better electrical responses in pH sensing. …”
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Switching waveform design with gate charge control for power MOSFETs by Hirotaka Oomori, Ichiro Omura

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A Method for Selection of Power MOSFETs to Minimize Power Dissipation by Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Mayank Chaturvedi, Sima Dimitrijev

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Influence of a Cooling System on Power MOSFETs’ Thermal Parameters by Krzysztof Górecki, Krzysztof Posobkiewicz

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Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance by Dong-Hyun Wang, Ja-Yun Ku, Dae-Han Jung, Khwang-Sun Lee, Woo Cheol Shin, Byung-Do Yang, Jun-Young Park

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Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction by Jian Fu Zhang, Rui Gao, Meng Duan, Zhigang Ji, Weidong Zhang, John Marsland

“…CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a key issue. To optimize chip design, trade-offs between reliability, speed, power consumption, and cost must be carried out. …”
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Simulation of heavy ion irradiation effect on 3D MOSFET by Ke Li, Jianhong Hao, Qiang Zhao, Fang Zhang, Zhiwei Dong

“…Based on the finite element method, the three-dimensional simulation of Metal-oxide-semiconductor field-effect transistor (MOSFET) is carried out. The single event upset effect of MOSFET under heavy ion irradiation and the influence of heavy ion irradiation on transient drain current are investigated. …”
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Design, process, and reliability considerations in silicon-on-insulator (SOI) MOSFETs by Sherony, Melanie J. (Melanie Jane)

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