A study of characteristics of n-Mosfet and p-Mosfet by using PSPICE / by 505583 Ashiqqin Shahrum,ld1987-, Abd. Rani Abd. Hamid, Fakulti Sains

Power mosfet design / by 285393 Taylor, B. E.

Strain-engineered MOSFETs / by 438749 Maiti, C. K., Maiti, T. K.

Modeling of submicron MOSFETs by Chua, Ley Mui.

“…The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating submicron and deep-submicron Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). This thesis describes a simple and efficient (computer-time less intensive) model for predicting the LDD MOSFET current-voltage (I-V) characteristics.…”
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Process and characterization of MOSFET incorporating dielectric pocket (DP-MOSFET) using TCAD tools / by Razali Ismail, 1960-, author, Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, Ismail Saad, 1974-, author, IEEE Regional Symposium on Microelectronics (2007: Pulau Pinang)

Numerical simulation characterization of 50nm MOSFET incorporating dielectric poket (DP - MOSFET) / by Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, Ismail Saad, 1974-, author, Razali Ismail, 1960-, author, International Conference on Advancement of Materials and Nanotechnology (2007: Pulau Langkawi, Kedah)

Characterization methods for submicron MOSFETs / by Hisham Haddara

Power Consumption of a MOSFET by Frederick Selkey

“…A MOSFET is defined as metal oxide semiconductor field effect transistor. …”
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Simulation of Resistance Modulation in MOSFETs by Mohammed A. Abdala

“… Simulation results for the resistance modulation in metal-semiconductor field effect transistors (MOSFETs) are presented. The numerical simulations show that the resistance fluctuation does increase as the trap area is reduced, passes through a maximum and finally decrease towards zero. …”
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Wide band noise in MOSFETs by Wang, Ping

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Automated MOSFET parameter extraction by Lui, Jerome C. (Jerome Chun Lung)

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Coulomb Blockade in Narrow MOSFETs by Lee, Patrick A., Meir, Yigal, Wingreen, Ned S., Kinaret, Jari M., Ariel, Imadiel

Subjects: “…Coulomb Blockade in Narrow MOSFETs…”
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Numerical exploration of asymmetrical MOSFETs by Qiu, Zhaoxiang.

“…Ideal MOSFET is intrinsically symmetrical in source and drain, and all existing models describing MOSFETs are built with this structural symmetry. …”
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Subthreshold MOSFET voltage reference by Utomo, Nardi

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Scaling and numerical simulation analysis of 50nn MOSFET incorporating dielectric pocket (DP - MOSFET) / by Razali Ismail, 1960-, author, Zul Atfyi Fauzan Mohammed Napiah, 1983-, author, Ismail Saad, 1974-, author, Regional Conference on Solid State and Technology (23rd: 2007: Johor)

Scaling and numerical simulation analysis of 50nm MOSFET incorporating dielectric pocket (DP-MOSFET) by Ismail, Razali, M. N., Zul Atfyi Fauzan, Saad, Ismail

“…A better control of VT roll-off was also demonstrated better for MOSFET with DP as compared to conventional MOSFET. …”

Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET) by M. N., Zul Atfyi Fauzan, Saad, Ismail, Ismail, Razali

“…A better control of VT roll-off was also demonstrated better for MOSFET with DP as compared to conventional MOSFET. …”
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Design and characterisation of strained silicon MOSFET / by 275773 Goh, Eunice Shing Mei, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik

Compact MOSFET models for VLSI design / by 219875 Bhattacharyya, A. B.

Modelling of nanoscale MOSFET using MATLAB / by Vijay Kumar Arora, author, Asia International Conference on Modelling & Simulation (3rd : 2009 : Bali, Indonesia)