TPCSA-MRAM: Ternary Precharge Sense Amplifier-Based MRAM by Mohammad Mahdi Mazaheri, Abdolah Amirany, Mohammad Hossein Moaiyeri

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An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM by Alon Ascoli, Nicolas Schmitt, Ioannis Messaris, Ahmet Samil Demirkol, John Paul Strachan, Ronald Tetzlaff, Leon Chua

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Low-power emerging memristive designs towards secure hardware systems for applications in internet of things by Nan Du, Heidemarie Schmidt, Ilia Polian

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A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses by Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari

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Non-volatile logic-in-memory circuit design by Tan, Tai Min

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DW-AES: A Domain-Wall Nanowire-Based AES for High Throughput and Energy-Efficient Data Encryption in Non-Volatile Memory by Wang, Yuhao, Ni, Leibin, Chang, Chip-Hong, Yu, Hao

Subjects: “…Nonvolatile Memory…”
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Advances in non-volatile memory and storage technology / by Nishi, Yoshio

Subjects: “…Nonvolatile random-access memory…”

A Nonvolatile Fast-Read Two-Transistor SRAM Based on Spintronic Devices by Chenyun Pan, Azad Naeemi

Subjects: “…Nonvolatile memory…”
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Electrically Controlled Meta-Switch With Nonvolatile Functionality by Yan Li, Weiwei Chen, Tingge Dai, Pengjun Wang

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Multiple nonvolatile skyrmion states in nanostructured synthetic antiferromagnetic multilayers by Ma, Mangyuan, Lew, Wen Siang, Ma, Fusheng

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Design of an Intermittent-Computing-Oriented Nonvolatile Register With a Switching-Probability-Aware Store-and-Verify Scheme by Masanori Natsui, Takahiro Hanyu

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A highly integrated nonvolatile bidirectional RFET with low leakage current by Xi Liu, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin

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A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET by Wei-Xiang You, Pin Su, Chenming Hu

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Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node by Gihun Choe, Shimeng Yu

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Low urine pH predicts new onset of diabetes mellitus during a 10‐year period in men: BOREAS‐DM1 study by Yukimura Higashiura, Marenao Tanaka, Masato Furuhashi, Masayuki Koyama, Hirofumi Ohnishi, Keita Numata, Takashi Hisasue, Nagisa Hanawa, Norihito Moniwa, Tetsuji Miura

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Nonvolatile reconfigurable terahertz wave modulator by Shoujun Zhang, Xieyu Chen, Kuan Liu, Haiyang Li, Yuehong Xu, Xiaohan Jiang, Yihan Xu, Qingwei Wang, Tun Cao, Zhen Tian

Subjects: “…Nonvolatile…”
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Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr_0.7Ca_0.3MnO₃ Material Improvements and Device Measurements by Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M. Shelby, Geoffrey W. Burr, Hyunsang Hwang

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Volatile semiconductor memory: past, present and future by Mojtaba Jodaki

Subjects: “…semiconductor memories volatile memories nonvolatile memories dram…”
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Area-Scalable 10⁹-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process by Mitsue Takahashi, Shigeki Sakai

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Recent trends in silicon carbide device research by Munish Vashishath

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