Conduction Performance Evaluation of Silicon and SiC Power Semiconductors for Solid-State DC Breakers by Andreas Giannakis, Dimosthenis Peftitsis

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Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling by Kazuhiro Mochizuki, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura

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High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application by Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei

Subjects: “…Power semiconductor devices…”
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Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters by Chengjun Shen, Saeed Jahdi, Olayiwola Alatise, Jose Ortiz-Gonzalez, Avinash Aithal, Phil Mellor

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Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices by Bingke Zhang, Hang Zhou, Bo Yi, Huan Ge, Rui Jin, Tao Zhu

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Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring by Kazuhiro Mochizuki, Norifumi Kameshiro, Hiroyuki Matsushima, Hiroyuki Okino, Renichi Yamada

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Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor by Hangzhi Liu, Shiwei Liang, Yuming Zhou, Jun Wang

Subjects: “…power semiconductor devices…”
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GaN HEMTs device modeling in high-power and high-frequency applications by Zhang, Juncheng

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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

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Design of High-Frequency, High-Power Class <inline-formula><tex-math notation="LaTeX">$\Phi _{2}$</tex-math></inline-formula> Inverter Through On-Resistance and Output Capacitance... by Kamlesh Sawant, Yu Zhou, Keerti Palanisamy, Jungwon Choi

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A Technical Review on the Proper Design of Gate Drivers in Industrial Power Electronics Applications by Saeid Ahmadi, Kourosh Khalaj Monfared, Mohammad Khalilzadeh, Hossein Imaneini

Subjects: “…power semiconductor devices…”
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Study on gate‐source voltage oscillation suppression in SiC MOSFETs based on LCR parallel branch by Changzhou Yu, Jiajia Li, Yukun Gu, Huixian Liu, Feng Xu, Yifei Wang, Shaolin Yu

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A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability by Moufu Kong, Yuanmiao Duan, Bingke Zhang, Ronghe Yan, Bo Yi, Hongqiang Yang

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Compact Thermal Modeling of Power Semiconductor Devices with the Influence of Atmospheric Pressure by Paweł Górecki

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A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates by Kazuhiro Mochizuki, Hiroyuki Okino, Hiroyuki Matsushima, Renichi Yamada

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Assessment of MOV Deterioration under Energized Conditions by Sung-Wook Kim, Nam-Hoon Kim, Gyung-suk Kil

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Overview of high voltage sic power semiconductor devices: development and application by Shiqi Ji, Zheyu Zhang, Fred Wang

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Non-linear thermal resistance model for the simulation of high power GaN-based devices by Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.

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Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage by Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith

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Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account by Paweł Górecki, Krzysztof Górecki

Subjects: “…power semiconductor devices…”
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