The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires by Stefania Carapezzi, Anna Cavallini

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Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors by Bergoi Ibarlucea, Lotta Römhildt, Felix Zörgiebel, Sebastian Pregl, Maryam Vahdatzadeh, Walter M. Weber, Thomas Mikolajick, Jörg Opitz, Larysa Baraban, Gianaurelio Cuniberti

Subjects: “…silicon nanowires…”
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ALD-passivated silicon nanowires for broadband absorption applications by Felix Kimeu, Sacharia Albin, Kyo Song, Kevin C. Santiago

“…In this study, we fabricate silicon nanowires using a wet chemical process and modify their absorptive properties via atomic layer deposition passivation. …”
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Preparation of Silicon Nanowires Photocathode for Photoelectrochemical Water Splitting by Zainab K. Ali, Mazin A. Mahdi

“… A metal-assisted chemical etching process employing p-type silicon wafers with varied etching durations is used to produce silicon nanowires. Silver nanoparticles prepared by chemical deposition are utilized as a catalyst in the formation of silicon nanowires. …”
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Approaching the ideal elastic strain limit in silicon nanowires by Zhang, H., Tersoff, J., Xu, S., Chen, H., Zhang, Q., Zhang, K., Yang, Y., Lee, C.-S., Tu, K.-N., Lu, Y., Li, James

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Thermal conductivity of silicon nanowire arrays with controlled roughness by Feser, Joseph P., Sadhu, Jyothi S., Azeredo, Bruno P., Hsu, Keng H., Ma, Jun, Kim, Junhwan, Seong, Myunghoon, Fang, Nicholas Xuanlai, Li, Xiuling, Ferreira, Placid M., Sinha, Sanjiv, Cahill, David G.

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Gate-all-around silicon nanowire FET modeling by Chen, Xiangchen

“…As a further extension of the multi-gate MOSFET, the gate-all-around (GAA) silicon nanowire FET is the most promising nanostructure design for next generation semiconductor device. …”
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Electrical characterisation of highly doped triangular silicon nanowires by Za'bah, Nor Farahidah, Kwa, Kelvin S. K., O’Neill, Anthony

“…A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. …”
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Direct growth and photoluminescence of silicon nanowires without catalyst by Al-Ruqeishi, M.S., Nor, R.M., Amin, Y.M., Al-Azri, K.

“…One-dimensional (1D) silicon nanowires (SiNWs) were fabricated on catalyst free Si (1 0 0) substrate using a thermal evaporation method. …”

Control growth of silicon nanocolumns' epitaxy on silicon nanowires by Chong, S.K., Dee, C.F., Yahya, N., Rahman, Saadah Abdul

The development of silicon nanowire as sensing material and its applications by Abdul Rashid, Jahwarhar Izuan, Abdullah, Jaafar, Yusof, Nor Azah, Hajian, Reza

“…The application of silicon nanowire (SiNW) as a sensing nanomaterial for detection of biological and chemical species has gained attention due to its unique properties. …”
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Current–voltage characteristics of a silicon nanowire transistor by Taghi Ahmadi, Mohammad, Houg Lau, Hui, Ismail, Razali, Arora, Vijay K.

“…However, the limited drift velocity is the Fermi velocity for a degenerately doped silicon nanowire, increasing with carrier concentration but independent of temperature. …”

Low-dimensional silicon nanowire (SINM) conductance model by Ahmadi, Mohammad Taghi, Johari, Zaharah, Isaak, Suhaila, Ismail, Razali

“…To keep downscaling on the track, the introduced of new structure such as Silicon Nanowire (SiNW) is necessary and appear to be the next step to pursue. …”

Impact of strain on electrical performance of Silicon Nanowire MOSFET by A. Hamid, Fatimah, Hamzah, Afiq, Mohamad, Azam, Ismail, R., Razali, M. A.

“…A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. …”

Analytical study of drift velocity in N - type silicon nanowires / by 268829 Choe, Yuet Sheng, Mohammad Tagi, Ahmadi Razali, Iee RegionaL SHATUDEN Confrence On and Develomm

Analytical study of drift velocity in N-type silicon nanowires / by Amir Hossein Fallahpour, Mohammad Taghi Ahmadi, RazaliIsmail, Asian Symposium on guiding electronic design (1st : 2009 Kuala Lumpur)

Performance evaluation of a silicon nanowire transistor [electronic resource] / by Choe, Yuet Sheng, 1986-

Modeling and simulation of silicon nanowire multi-gate nanoscale transistor / by Fatimah Khairiah Abd. Hamid, 1988-, Razali Ismail, supervisor, Tan, Michael Loong Peng, Fakulti Kejuruteraan Elektrik

A simulation study of photoluminescence silicon nanowires [electronic resource] / by Aliyu Kabiru Isiyaku, 1982- , author

Temperature sensitivity of silicon nanowire transistor based on channel length by AlAriqi, Hani Taha, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap

“…This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. …”
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