Submicron Structures Technology and Research od Anderson, Erik H., Carter, James M., Chu, William, Quek, Hui Meng, Plotnik, Irving, Schattenburg, Mark L., Yen, Anthony T., Smith, Henry I., Ku, Yao-C., Field, S. B., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Antoniadis, Dimitri A., Kastner, Marc A., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Shahidi, Ghavam G., Ajuria, Sergio, Atwater, Harry A., Floro, Jerrold A., Thompson, Carl V., Palmer, Joyce E., Canizares, Claude R.

Teme: “...Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors...”
Polni tekst

Submicron Structures Technology and Research od Smith, Henry I., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ghanbari, Reza A., Ku, Yao-Ching, Moel, Alberto, Quek, Hui Meng, Schattenburg, Mark L., The, Siang-Chun, Yen, Anthony T., Lu, Kenneth P., Su, Lisa T-F., Gutierrez, JoAnne M., Tsai, Flora S., Antoniadis, Dimitri A., Carlin, Gregory A., Meyer, Paul G., Shahidi, Ghavam G., Field, Stuart B., Kastner, Marc A., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., del Alamo, Jesus A., Ismail, Khalid, Liu, C. T., Smith, T. P., Tsui, Daniel, Canizares, Claude R., Floro, Jerold A., Thompson, Carl V.

Teme: “...Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors...”
Polni tekst

Submicron Structures Technology and Research od Anderson, Erik H., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ku, Yao-Ching, Quek, Hui Meng, Moel, Alberto, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Plotnik, Irving, Kawata, Hiroaki, Antoniadis, Dimitri A., Field, Stuart B., Kastner, Marc A., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Meyer, Paul, Shahidi, Ghavam G., The, Siang-Chun, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., III, Palmer, Joyce E., Canizares, Claude R.

Teme: “...Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors...”
Polni tekst

Submicron Structures Technology and Research od Smith, Henry I., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ghanbari, Reza A., Ku, Yao-Ching, Moel, Alberto M., Schattenburg, Mark L., The, Siang-Chun, Yen, Anthony T., Gutierrez, JoAnne M., Lu, Kenneth P., Ng, Lee-Peng, Salyani, Shahir R., Su, Lisa T-F., Tsai, Flora S., Wey, Lead, Antoniadis, Dimitri A., Carlin, Gregory A., Fang, Hao, Hu, Hang, Field, Stuart B., Kastner, Marc A., Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., del Alamo, Jesus A., Ismail, Khalid, Yee, Kenneth, Evans, Keith, Liu, C. T., Shayegan, M., Smith, T. P., Tsui, Daniel, Zhao, Yang, Canizares, Claude R., Floro, Jerrold A., Thompson, Carl V.

Teme: “...Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors...”
Polni tekst