Submicron Structures Technology and Research Autor Anderson, Erik H., Carter, James M., Chu, William, Quek, Hui Meng, Plotnik, Irving, Schattenburg, Mark L., Yen, Anthony T., Smith, Henry I., Ku, Yao-C., Field, S. B., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Antoniadis, Dimitri A., Kastner, Marc A., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Shahidi, Ghavam G., Ajuria, Sergio, Atwater, Harry A., Floro, Jerrold A., Thompson, Carl V., Palmer, Joyce E., Canizares, Claude R.

Témata: “…Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors…”
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Submicron Structures Technology and Research Autor Smith, Henry I., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ghanbari, Reza A., Ku, Yao-Ching, Moel, Alberto, Quek, Hui Meng, Schattenburg, Mark L., The, Siang-Chun, Yen, Anthony T., Lu, Kenneth P., Su, Lisa T-F., Gutierrez, JoAnne M., Tsai, Flora S., Antoniadis, Dimitri A., Carlin, Gregory A., Meyer, Paul G., Shahidi, Ghavam G., Field, Stuart B., Kastner, Marc A., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., del Alamo, Jesus A., Ismail, Khalid, Liu, C. T., Smith, T. P., Tsui, Daniel, Canizares, Claude R., Floro, Jerold A., Thompson, Carl V.

Témata: “…Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors…”
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Submicron Structures Technology and Research Autor Anderson, Erik H., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ku, Yao-Ching, Quek, Hui Meng, Moel, Alberto, Schattenburg, Mark L., Smith, Henry I., Yen, Anthony T., Plotnik, Irving, Kawata, Hiroaki, Antoniadis, Dimitri A., Field, Stuart B., Kastner, Marc A., Licini, Jerome C., Meirav, Udi, Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., Ismail, Khalid, Meyer, Paul, Shahidi, Ghavam G., The, Siang-Chun, Ajuria, Sergio, Floro, Jerrold A., Thompson, Carl V., III, Palmer, Joyce E., Canizares, Claude R.

Témata: “…Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors…”
Získat plný text

Submicron Structures Technology and Research Autor Smith, Henry I., Burkhardt, Martin, Carter, James M., Chu, William, Early, Kathleen R., Ghanbari, Reza A., Ku, Yao-Ching, Moel, Alberto M., Schattenburg, Mark L., The, Siang-Chun, Yen, Anthony T., Gutierrez, JoAnne M., Lu, Kenneth P., Ng, Lee-Peng, Salyani, Shahir R., Su, Lisa T-F., Tsai, Flora S., Wey, Lead, Antoniadis, Dimitri A., Carlin, Gregory A., Fang, Hao, Hu, Hang, Field, Stuart B., Kastner, Marc A., Park, Samuel L., Scott-Thomas, John H. F., Bagwell, Phillip F., Orlando, Terry P., del Alamo, Jesus A., Ismail, Khalid, Yee, Kenneth, Evans, Keith, Liu, C. T., Shayegan, M., Smith, T. P., Tsui, Daniel, Zhao, Yang, Canizares, Claude R., Floro, Jerrold A., Thompson, Carl V.

Témata: “…Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors…”
Získat plný text