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1
Capacitance-voltage characteristics of GaAs ion-implanted structures
Published 2008-08-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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2
Inductance, electrically adjusted by semiconductor structure
Published 2012-08-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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3
Mathematical model of process of redundant measurements with uninterrupted influence of measurand on sensing element of sensor
Published 2011-12-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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4
Modeling low-frequency connectors for application in high-frequency circuits
Published 2004-09-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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5
The continuous wave NQR spectrometer with equidistant frequency scale
Published 2010-10-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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6
Low-temperature strain gauges based on silicon whiskers
Published 2008-08-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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7
Laser ablation and photostimulated passivation of the surface of Cd1–хZnхTe crystals
Published 2011-06-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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8
Role of personality in scientific advancement (dedicated to the eightieth anniversary of the birth of Lev G. Gassanov)
Published 2016-05-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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9
Technology and equipment for processing diamond materials of modern electronics
Published 2009-02-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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10
Exciton laser rate equations
Published 2011-08-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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11
The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon
Published 2008-10-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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12
A rational account of parasitic elements of the electronic modules in their design .
Published 2003-10-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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13
Specialized device of power supplies
Published 2010-02-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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14
Gallium arsenide p+–n–p+-structures with impoverished base area
Published 2009-06-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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15
Algorithm of the managing systems state estimation
Published 2010-02-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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16
Investigation of metrological parameters of measuring system for small temperature changes
Published 2014-02-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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17
Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits
Published 2008-02-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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18
Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes
Published 2010-08-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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19
The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3
Published 2012-06-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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20
Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact
Published 2011-11-01“…Tekhnologiya i Konstruirovanie v Elektronnoi Apparature…”
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