SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance by Xintian Zhou, Hao Gong, Yunpeng Jia, Dongqing Hu, Yu Wu, Tian Xia, Haoyang Pang, Yuanfu Zhao

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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching by Ping Li, Jingwei Guo, Shengdong Hu, Zhi Lin

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A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics by Hao Wu, Xuan Li, Xiaochuan Deng, Yangyang Wu, Jiawei Ding, Wensong Peng, Bo Zhang

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Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC by Jens Peter Konrath

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Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed by Yangjie Ou, Zhong Lan, Xiarong Hu, Dong Liu

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A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance by Lijuan Wu, Mengyuan Zhang, Jiahui Liang, Mengjiao Liu, Tengfei Zhang, Gang Yang

Subjects: “…bipolar degradation…”
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