Operation of the industrial accelerator of electrons with minimum beam intensity by T. V. Kovalinska, V. I. Sakhno, Yu. V. Ivanov

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High Performance p-i-n Photodetectors on Ge-on-Insulator Platform by Xuewei Zhao, Guilei Wang, Hongxiao Lin, Yong Du, Xue Luo, Zhenzhen Kong, Jiale Su, Junjie Li, Wenjuan Xiong, Yuanhao Miao, Haiou Li, Guoping Guo, Henry H. Radamson

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The influence of the structure of guard rings on the dark currents of silicon p-i-n photodiodes by M.S. Kukurudzіak

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The PPTN-02 new-generation current-voltage transducers for measuring of photosignals by Butenko V. K., Yuryev V. G., Godovaniouk V. M., Doctorovych I. V., Fedotov S. G.

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Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor by Su-Young Chai, Sung-Hoon Choa

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Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors by Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu, Ryo Hirose, Ryosuke Okuyama, Ayumi Onaka-Masada, Hidehiko Okuda, Yoshihiro Koga

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Temperature Sensors Integrated into a CMOS Image Sensor by Accel Abarca, Shuang Xie, Jules Markenhof, Albert Theuwissen

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Silicic p–i–n-photodiode with small dark current by Dobrovolskiy Yu. G., Ashcheulov A. A.

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Dark Current Measurement and Noise Correction Method for LWIR QWIP Detection System Based on Focal-Plane Temperature by Haoting Du, Zhentao Gong, Dandan Li, Yun Wang, Yun Zhao, Jintong Xu, Dexin Sun

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Analysis of Dark Data of the PICNIC IR Arrays in the CIBER by D. H. Lee, M. G. Kim, K. Tsumura, M. Zemcov, U. W. Nam, J. Bock, J. Battle, V. Hristov, T. Renbarger, T. Matsumoto, I. Sullivan, L. R. Levenson, P. Mason, S. Matsuura, G. H. Kim

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Towards dark current suppression in metallic photocathodes by selected-area oxidation by C. Benjamin, S.D. Seddon, M. Walker, L.B. Jones, T.C.Q. Noakes, G.R. Bell

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Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters by M.S. Kukurudziak

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Dark current analysis of InasSb-based hetero-p-i-n mid-infrared photodiode by Suo, Fei, Tong, Jinchao, Zhang, Dao Hua

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Effect of Structural Defects on Parameters of Silicon Four-Quadrant p-i-n Photodiodes by Mykola S. Kukurudziak

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Practical True Random Number Generator Using CMOS Image Sensor Dark Noise by Byung Kwon Park, Hojoong Park, Yong-Su Kim, Ju-Sung Kang, Yongjin Yeom, Changhui Ye, Sung Moon, Sang-Wook Han

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Dark Current Noise Correction Method Based on Dark Pixels for LWIR QWIP Detection Systems by Haoting Du, Jintong Xu, Zihao Yin, Mengyang Chai, Dexin Sun

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Influence of silicon characteristics on the parameters of manufactured photonics cells by Mykola S. Kukurudziak, Volodymyr M. Lipka

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Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel by Toshifumi Yokoyama, Masafumi Tsutsui, Masakatsu Suzuki, Yoshiaki Nishi, Ikuo Mizuno, Assaf Lahav

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Silicon p-i-n Mesa-Photodiode Technology by Mykola S. Kukurudziak, Volodymyr M. Lipka, Vyacheslav V. Ryukhtin

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Dark Current Analysis on GeSn <i>p-i-n</i> Photodetectors by Soumava Ghosh, Greg Sun, Timothy A. Morgan, Gregory T. Forcherio, Hung-Hsiang Cheng, Guo-En Chang

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