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    Analysis of Threshold Voltage Shift for Full V<sub>GS</sub>/V<sub>DS</sub>/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

    Analysis of Threshold Voltage Shift for Full V<sub>GS</sub>/V<sub>DS</sub>/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors by Je-Hyuk Kim, Jun Tae Jang, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Yoon Kim, Dae Hwan Kim

    Published 2021-03-01
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