Planarized Trench Isolation of In_0.52Al_0.48As/In_0.8Ga_0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanc... by Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang

Subjects: “…metamorphic high-electron-mobility transistor (MHEMT)…”
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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors by Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

Subjects: “…high-electron-mobility transistor (HEMT)…”
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Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors by Satou Akira, Negoro Takumi, Narita Kenichi, Hosotani Tomotaka, Tamura Koichi, Tang Chao, Lin Tsung-Tse, Retaux Paul-Etienne, Takida Yuma, Minamide Hiroaki, Suemitsu Tetsuya, Otsuji Taiichi

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Structural Optimization of p-GaN Gate GaN-Based High Electron Mobility Transistors by GE Mei;, LI Yi;, WANG Zhiliang, ZHU Youhua

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Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer by Kuo-Bin Hong, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang, Chun-Hsiung Lin

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Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration by Lung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang

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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates by Idriss Abid, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, Farid Medjdoub

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Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study by Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul

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On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si by Chung, Jinwook, Lu, Bin, Palacios, Tomas

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Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulatio... by Ji-Hun Kim, Chae-Yun Lim, Jae-Hun Lee, Jun-Hyeok Choi, Byoung-Gue Min, Dong Min Kang, Hyun-Seok Kim

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Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature by Chang Liu, Yiqiang Chen, Yuhan Xie, Hongxia Liu, Zongqi Cai

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3 kV monolithic bidirectional GaN HEMT on sapphire by Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

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The Evolution of Manufacturing Technology for GaN Electronic Devices by An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang

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Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications † by Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee

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Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications by Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu

Subjects: “…High electron mobility transistor (HEMT)…”
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THE 2-MM RANGE RECEIVING MODULE FOR OBSERVATIONS OF ATMOSPHERIC OZONE EMISSION LINE AT 142.2 GHz by V. I. Piddyachiy, O. M. Korolev, V. V. Myshenko, V. M. Shulga

Subjects: “…pseudomorphic high electron-mobility transistor (phemt)…”
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Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance by Min Su Cho, Jae Hwa Seo, Sang Ho Lee, Hwan Soo Jang, In Man Kang

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors by Joh, Jungwoo, del Alamo, Jesus A.

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InAlN/GaN HEMTs on Si With High fT of 250 GHz by Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás

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A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap by An-Chen Liu, Yung-Yu Lai, Hsin-Chu Chen, An-Ping Chiu, Hao-Chung Kuo

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