First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding by Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ng, Geok Ing

“…In0.17Al0.83N/GaN high-electron-mobility transistor (HEMT) using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. …”
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Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics by Vincas Tamošiūnas, Linas Minkevičius, Ignotas Bučius, Domas Jokubauskis, Karolis Redeckas, Gintaras Valušis

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Analytic Model of Threshold Voltage (V_TH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress by René Escoffier, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jérome Biscarrat, Véronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica, Ferdinando Iucolano

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Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method by Sun, X., Chang-Liao, K. S., Cui, S., Ma, T. P., Saadat, Omair Irfan, Palacios, Tomas

“…We introduce an ac-transconductance method to profile the gate oxide traps in a HfO[subscript 2] gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal gates, which in turn causes changes in analog and pulsed channel currents. …”
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Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate by Tham, Wai Hoe, Ang, Diing Shenp, Bera, Lakshmi Kanta, Surani Bin Doimanan, Bhat, Thirumaleshwara N., Kajen, Rasanayagam S., Tan, Hui Ru, Teo, Siew Lang, Tripathy, Sudhiranjan

“…The authors report on the fabrication and characterization of low-temperature processed gold-free Ohmic contacts for AlxGa1−xN/GaN high electron mobility transistors (HEMTs). The HEMT structure grown on a 200-mm diameter Si(111) substrate is used in this study. …”
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Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation by Van Cuong Nguyen, Kwangeun Kim, Hyungtak Kim

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Modulating Light Emission Performance of PCSEL via GaN HEMT Driving Circuit by Yu-Heng Hong, Ching-Yao Liu, Jun-Da Chen, Chun-Yen Peng, Li-Chuan Tang, Tien-Chang Lu, Chun-Hsiung Lin, Wei-Hua Chieng, Edward Yi Chang, Shih-Chen Chen, Hao-Chung Kuo

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Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron... by A. D. Yunik, A. H. Shydlouski

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Impact of Charge-Trapping Effects on Reliability Instability in Al_xGa_1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions by Walid Amir, Surajit Chakraborty, Hyuk-Min Kwon, Tae-Woo Kim

“…In this study, we present a detailed analysis of trapping characteristics at the Al_xGa_1−xN/GaN interface of Al_xGa_1−xN/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the Al_xGa_1−xN barrier impacts the performance of the device. …”
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Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy by Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.

“…To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. …”
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Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon by Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Manoj Kumar, Chandra Mohan, Ang, Kian Siong, Anand, Mulagumoottil Jesudas, Wang, Hong, Hofstetter, René, Ye, Gang

“…Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. …”
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On large-signal modeling of GaN HEMTs: past, development and future by Haorui Luo, Wenrui Hu, Yongxin Guo

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Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications by Enrique Maset, Juan Bta. Ejea, Agustín Ferreres, José Luis Lizán, Jose Manuel Blanes, Esteban Sanchis-Kilders, Ausias Garrigós

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Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme by Chao-Tsung Ma, Zhen-Huang Gu

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A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique by Soyeon Seo, Jinho Lee, Yongho Lee, Hyunchol Shin

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Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation by Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan

Subjects: “…gallium nitride high electron mobility transistor…”
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Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□) by Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen, Md Tahmidul Alam, Surjava Sanyal, Ruixin Bai, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat

Subjects: “…high-electron-mobility transistors…”
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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array by Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, Ching-Ting Lee

Subjects: “…double-channel metal oxide semiconductor high-electron mobility transistors…”
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High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology by Bohan Guo, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, Zhongkai Du, Xuguang Deng, Zhongming Zeng, Baoshun Zhang

“…This article presents the utilization of the chemical–mechanical polishing (CMP) method to fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) through layer transfer technology. …”
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AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process by Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia

“…This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal–oxide–semiconductor (CMOS) compatible gold-free process. …”
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