Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model by Wu, Yingzhe, Yin, Shan, Dong, Minghai, Jin, Shoudong, Li, Hui, Cheng, Yuhua, See, Kye Yak

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AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics by Justinas Jorudas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, Irmantas Kašalynas

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Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO_xN_y MIS Gate by Hyun-Seop Kim, Myoung-Jin Kang, Jeong Jin Kim, Kwang-Seok Seo, Ho-Young Cha

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Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs by Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang

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Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection by Wenhan Song, Haowen Guo, Yitian Gu, Junmin Zhou, Jin Sui, Baile Chen, Wei Huang, Xinbo Zou

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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation by Guo, Shiping, Tirado, Jose M., Gao, Xiang, Saadat, Omair Irfan, Chung, Jae W., Palacios, Tomas

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Thermal Management of Hotspots With a Microjet-Based Hybrid Heat Sink for GaN-on-Si Devices by Han, Yong, Lau, Boon Long, Zhang, Xiaowu, Leong, Yoke Choy, Choo, Kok Fah

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Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN_x Gate Dielectric at Different Temperatures by Dongsheng Zhao, Liang He, Lijuan Wu, Qingzhong Xiao, Chang Liu, Yuan Chen, Zhiyuan He, Deqiang Yang, Mingen Lv, Zijun Cheng

“…In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiN_x gate dielectric were tested under hydrogen exposure conditions. …”
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Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al₂O₃/ZrO₂ Stacked Gate Dielectrics by Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee, Yeong-Her Wang

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Effects of Seed-Layer N₂O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures by Seungmin Lee, Kiyun Nam, Jae Hyun Kim, Gi Young Hong, Sam-Dong Kim

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Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content by Junjie Li, Johan Bergsten, Arsalan Pourkabirian, Jan Grahn

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An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology by Mohammad Abdul Alim, Christophe Gaquiere, Giovanni Crupi

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Combined Pulse Data Transmission and Indoor Localization Using 60-GHz-UWB MMIC Technology by Christophe Loyez, Michael Bocquet, Nathalie Rolland, Kamel Haddadi

Subjects: “…pseudomorphic high electron mobility transistor (pHEMT)…”
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GaN Integrated Circuit Power Amplifiers: Developments and Prospects by Reza Nikandish

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Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array by Hsin-Ying Lee, Ying-Hao Ju, Jen-Inn Chyi, Ching-Ting Lee

Subjects: “…metal–oxide–semiconductor high-electron mobility transistors…”
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In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi

“…Reasonably good uniformity in electrical characteristics with a standard deviation of 7%, 1% and 8% for the sheet resistance, carrier concentration and mobility, respectively, were achieved for GaN high-electron-mobility transistor heterostructures across the 100 mm substrate.…”
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Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications by Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao

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Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs by Enrique Maset, Pedro Martín-Holgado, Yolanda Morilla, David Gilabert, Esteban Sanchis-Kilders, Pedro J. Martínez

Subjects: “…high-electron-mobility transistor (HEMT)…”
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AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment by Shuo-Huang Yuan, Feng-Yeh Chang, Dong-Sing Wuu, Ray-Hua Horng

Subjects: “…metal-oxide-semiconductor high-electron mobility transistor…”
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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication by Tae Kyoung Kim, Abu Bashar Mohammad Hamidul Islam, Yu-Jung Cha, Joon Seop Kwak

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