Design Method of Vertical Lattice Loop Structure for Parasitic Inductance Reduction in a GaN HEMTs-Based Converter by Si-Seok Yang, Sung-Soo Min, Chan-Hyeok Eom, Rae-Young Kim, Gi-Young Lee

Subjects: “…gallium nitride high electron mobility transistors…”
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Parallel connected GaN E‐HEMT VSI‐based servo drives for PMSMs by Huseyin Yuruk, Ozan Keysan

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Releasable AlGaN/GaN 2D electron gas heterostructure membranes for flexible wide-bandgap electronics by Zhang, Yi-Yu, An, Shu, Zheng, Yi-Xiong, Lai, Junyu, Seo, Jung-Hun, Lee, Kwang Hong, Kim, Munho

Subjects: “…AlGaN/GaN High-Electron Mobility Transistors…”
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Dead‐time optimisation for a phase‐shifted dc–dc full bridge converter with GaN HEMT by D.M. Joo, B.K. Lee, J.S. Kim

Subjects: “…gallium nitride high‐electron‐mobility transistor…”
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DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology by Balla Lakshmi, Gollakota Venkata Krishna Sharma

Subjects: “…pseudomorphic High Electron Mobility Transistor (pHEMT)…”
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Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications by Chao-Tsung Ma, Zhen-Huang Gu

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Impact of Output Conductance on Current-Gain Cut-Off Frequency in In<i>_x</i>Ga<i>_1-x</i>As/In<i>_0.52</i>Al<i>_0.48</i>As Quantum-Well High-Electron-Mobility Transistors on InP Substrate by Hyo-Jin Kim, In-Geun Lee, Hyeon-Bhin Jo, Tae-Beom Rho, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Tae-Woo Kim, Dae-Hyun Kim

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A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios by Dawid Kuchta, Daniel Gryglewski, Wojciech Wojtasiak

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Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers by Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar, Amit Krishna Dwivedi, Manisha Guduri, Aminul Islam

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Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate by Peiran Wang, Chenkai Deng, Hongyu Cheng, Weichih Cheng, Fangzhou Du, Chuying Tang, Chunqi Geng, Nick Tao, Qing Wang, Hongyu Yu

Subjects: “…AlGaN/GaN high-electron mobility transistors (HEMTs)…”
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Characterization of GaN HEMTs' Aging Precursors and Activation Energy Under a Wide Range of Thermal Cycling Tests by Hussain Sayed, Gnana Sambandam Kulothungan, Harish S. Krishnamoorthy

Subjects: “…Gallium nitride (GaN) high-electron-mobility-transistors (HEMTs)…”
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A Miniature Biomedical Sensor for Rapid Detection of <i>Schistosoma japonicum</i> Antibodies by Shengjie Hu, Xuecheng Jiang, Liang Yang, Xue Tang, Guofeng Yang, Yuanyuan Hu, Jie Wang, Naiyan Lu

Subjects: “…AlGaN/GaN high electron mobility transistors (HEMT)…”
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Comprehensive Comparison of MOCVD- and LPCVD-SiN_x Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications by Longge Deng, Likun Zhou, Hao Lu, Ling Yang, Qian Yu, Meng Zhang, Mei Wu, Bin Hou, Xiaohua Ma, Yue Hao

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Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation by Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen

“…In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron mobility transistor (MISHEMT), were studied to investigate the degradation mechanism after proton irradiation. …”
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Design and fabrication of III-V RF devices for MMIC applications by Ang, Kian Siong

“…Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.…”
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Development of thin film structures for heterojunction bipolar transistors (HBTs) by Radhakrishnan, K., Yoon, Soon Fatt., Tse, Man Siu.

“…Based on this experience, several high electron mobility transistor devices have been fabricated and characterized.…”
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Development of passive components for high power application by Ho, Chong Chye.

“…Gallium Nitride based heterostructure transistors such as GaN High Electron Mobility Transistor (HEMT) is attractive for high power and high frequency applications because of their high breakdown voltage, high carrier velocity and high power performance. …”
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Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review by Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul

“…Therefore, the superior performance is represented by GaN-based high electron mobility transistor (HEMT) devices. They can perform at higher currents, voltages, temperatures, and frequencies, making them suitable devices for the next generation of high-efficiency power converter applications, including electric vehicles, phone chargers, renewable energy, and data centers. …”
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Fabrication and charaterization of InP-based high election mobility transistors by Liu, Yuwei

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Design, fabrication and characterization of GaAs-based interdigital-gated HEMT devices for solid-state THz wave amplifiers by Hashim, Abdul Manaf, Kasai, Seiya, Lizuki, Kouichi, Hashizume, Tamotsu, Hasegawa, Hideki

“…Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. …”