Electrothermal Responses of Bonding Wire Arrays in GaN Power Amplifier by Hao Xie, Sichao Du, Bo Pu, Jun Hu, Yu Zhang, Wei Qi, Hong Liu, Shuo Zhang, Duo Xiao

“…The device reliability problems of the bonding wire array in gallium nitride (GaN)-based high electron mobility transistor (HEMT) power amplifier become more and more serious due to high-voltage operation, impedance mismatching conditions, and so on. …”
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A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators by Hyosung Nam, Taejoo Sim, Junghyun Kim

“…A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. …”
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Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations by Muhammad Faizan, Kai Han, Xiaolei Wang, Muhammad Zain Yousaf

“…GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. …”
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UWB-MMIC Matrix Distributed Low Noise Amplifier by Moustapha El Bakkali, Said Elkhaldi, Intissar Hamzi, Abdelhafid Marroun, Naima Amar Touhami

“…In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S₂₁, low reverse gain S₁₂, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is presented. This Low Noise Amplifier (LNA) was designed with the Advanced Design System simulator in distributed matrix architecture. …”
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Readout Integrated Circuit for Small-Sized and Low-Power Gas Sensor Based on HEMT Device by Seungjun Lee, Joohwan Jin, Jihyun Baek, Juyong Lee, Hyungil Chae

“…This paper presents a small-sized, low-power gas sensor system combining a high-electron-mobility transistor (HEMT) device and readout integrated circuit (ROIC). …”
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An Analytic Design Approach to Inverse Class-F RF Power Amplifiers by Firas M. Ali, Mahmuod H. Al-Muifraje, Thamir R. Saeed

“…This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. …”
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Dual-functional on-chip AlGaAs/GaAs schottky diode for RF power detection and low-power rectenna applications by Hashim, Abdul Manaf, Mustafa, Farahiyah, Abd. Rahman, Shaharin Fadzli, Ab. Rahman, Ab. Rahim

“…A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. …”
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Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs by Saddam Husain, Anwar Jarndal, Mohammad Hashmi, Fadhel M. Ghannouchi

“…This article presents accurate, efficient and reliable small-signal model parameter extraction approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Firstly, a scanning-based systematic model parameter extraction methodology is developed. …”
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Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT by Rui-Rong Wang, Hao Guo, Jun Tang, Jin-Ping Liu, Li-Shuang Liu

“…A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. …”
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Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices by Kaihong Wang, Yidi Zhu, Hao Zhao, Ruixue Zhao, Binxin Zhu

“…Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. …”
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Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure by Taizoh Sadoh, Mastura Shafinaz Zainal Abidin, Abdul Manaf Hashim, Maneea Eizadi Sharifabad, Shaharin Fadzli Abd Rahman

“…The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. …”
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Derivation of the Resonance Mechanism for Wireless Power Transfer Using Class-E Amplifier by Ching-Yao Liu, Guo-Bin Wang, Chih-Chiang Wu, Edward Yi Chang, Stone Cheng, Wei-Hua Chieng

“…The depletion mode of a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch the states in a class-E amplifier circuit in this high frequency. …”
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Thermodynamics of a single mesoscopic phononic mode by Ilya Golokolenov, Arpit Ranadive, Luca Planat, Martina Esposito, Nicolas Roch, Xin Zhou, Andrew Fefferman, Eddy Collin

“…The technique is constructed around a microwave optomechanical setup using a cryogenic high electron mobility transistor, and is based on two parametric amplifications implemented in series: an in-built optomechanical “blue detuned” pumping plus a traveling wave parametric amplifier stage. …”
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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates by Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang

“…In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). …”
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Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review by Enrico Bottaro, Santi Agatino Rizzo, Nunzio Salerno

“…Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. …”
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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers by Alexei V. Sakharov, Dmitri S. Arteev, Evgenii E. Zavarin, Andrey E. Nikolaev, Wsevolod V. Lundin, Nikita D. Prasolov, Maria A. Yagovkina, Andrey F. Tsatsulnikov, Sergey D. Fedotov, Evgenii M. Sokolov, Vladimir N. Statsenko

“…A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. …”
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Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN by Caroline Elias, Maud Nemoz, Hélène Rotella, Frédéric Georgi, Stéphane Vézian, Maxime Hugues, Yvon Cordier

“…In this work, and for the first time, ScAlN growth has been performed by molecular beam epitaxy with ammonia source as nitrogen precursor. High electron mobility transistor heterostructures with a 26 nm thick Sc0.15Al0.85N barrier have been grown on GaN-on-sapphire substrates. …”
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The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design by Chong-Rong Huang, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Hsien-Chin Chiu, Chih-Tien Chen, Kuo-Jen Chang

“…In this study, a 50-nm Al_0.05Ga_0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. …”
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Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network by Tongyao Luan, Yongqing Leng, Xin Qiu, Xingli Cui, Aizhen Hu, Bo Xu, Yatao Peng

“…In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. …”
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A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT by Jiaxuan Li, Yang Yuan, Bin Yuan, Jingxin Fan, Jialong Zeng, Zhongjun Yu

“…To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. …”
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