Failure Mechanism of pHEMT in Navigation LNA under UWB EMP by Yonglong Li, Bingrui Yu, Shengxian Chen, Ming Hu, Xiangwei Zhu, Xuelin Yuan

“…In this paper, the temporary failure mechanism of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) in a navigation low-noise amplifier (LNA) under the jamming of ultra-wideband (UWB) electromagnetic pulses (EMP) is investigated. …”
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Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps by Yu-Lin Song, Manoj Kumar Reddy, Luh-Maan Chang, Gene Sheu

“…This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. …”
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On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems by Zheyang Zheng, Han Xu, Li Zhang, Kevin J. Chen

“…It is revealed that the propagation delay of a single-stage CL gate based on the commercial p-GaN gate power HEMT (high-electron-mobility transistor) platform could be as short as sub-nanosecond, which sufficiently satisfies the requirement of power conversion systems typically with operating frequencies less than 10 MHz. …”
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A New Study on the Temperature and Bias Dependence of the Kink Effects in <i>S</i>₂₂ and <i>h</i>₂₁ for the GaN HEMT Technology by Giovanni Crupi, Antonio Raffo, Valeria Vadalà, Giorgio Vannini, Alina Caddemi

“…The analysis is accomplished using high-frequency scattering (<i>S</i>-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. …”
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A Ku-Band GaAs Multifunction Transmitter and Receiver Chipset by Hyunkyu Lee, Younghwan Kim, Iljin Lee, Dongkyo Kim, Kwangwon Park, Sanggeun Jeon

“…This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-μm GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360° digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. …”
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Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation by Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu

“…In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed. …”
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Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA by Qian Lin, Lining Jia, Haifeng Wu, Xiaozheng Wang

“…In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. …”
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A 5-Bit X-Band GaN HEMT-Based Phase Shifter by Hsien-Chin Chiu, Chun-Ming Chen, Li-Chun Chang, Hsuan-Ling Kao

“…In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. …”
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High-Efficiency GaN-Based Power Amplifiers for Envelope Nonlinearities’ Mitigation in VHF Wideband Polar-Mode Transmitters by Moisés Patiño-Gómez, Francisco-Javier Ortega-González

“…Its design is based on a solution called hybrid-coupled switching voltage PA in combination with gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed VHF PA prototype delivers up to 95 W from a 28 V power supply, with a drain efficiency about 80% within the 118 MHz to 138 MHz operating band. …”
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Design-space and scalable technology for GaN based power transistors by Piedra, Daniel, Ph. D. Massachusetts Institute of Technology

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Ultrasensitive real-time detection of Pb²⁺ ions using g-C₄N₄ nanosheets by Sharma, Nipun, Sakthivel, Arun Kumar, Alwarrapan, Subbiah, Gupta, Ankur, Razeen, Ahmed S., Patil, Dharmraj Subhash Kotekar, Tripathy, Sudhiranjan, Kumar, Mahesh

“…In this work, a GaN-based high-electron-mobility transistor (HEMT) sensor has been fabricated using optical lithography and explored as a prospective sensor for the determination of trace Pb2+ ions present in the water. …”
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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression by Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing

“…With the unified Ef model, a surface-potential (φs) based drain-current (Ids) model for the metal-insulator-semiconductor (MIS) high electron-mobility transistor (HEMT) is developed. Nonlinear source/drain access region resistances ( Rs and Rd) can also be modeled via a subcircuit, including an empirical Rs model for capturing the current-collapse effect. …”
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Design of high compression point josephson junction travelling wave parametric amplifiers for readout of millimetre and sub-millimetre astronomical receivers by Navarro Montilla, J, Tan, BK

“…We then compare the SIS receiver noise performance utilising these JTWPAs with that of using a conventional high gain High Electron Mobility Transistor (HEMT) amplifier. We show that we can improve the receiver sensitivity significantly by either cascading two 23 dB gain JTWPA or using a combination of a 16 dB gain JTWPA and a HEMT amplifier. …”

Design of a high-gain silicon BJT and an E-pHEMT hybrid matrix amplifier with an optimum filter-matching technique by Sangaran, Pragash, Kumar, Narendra, Paoloni, Claudio

“…A novel hybrid silicon bipolar junction transistor (BJT) and an enhancement-mode pseudomorphic-high-electron-mobility-transistor (E-pHEMT) matrix amplifier with two rows and four columns (2 × 4) of transistors are designed, realised, and tested demonstrating a 0.65–5.8 GHz frequency band to satisfy the SDR specifications. …”

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions by Othman, Nurul Aida Farhana, Rahman, Sharidya, Wan Muhamad Hatta, Sharifah Fatmadiana, Soin, Norhayati, Benbakhti, Brahim, Duffy, Steven

“…Purpose: To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. …”

Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization by Liu, Xinzhi, Shafie, Suhaidi, Radzi, Mohd Amran Mohd, Azis, Norhafiz, Karim, Abdul Hafiz Abdul

“…This research delves into the intricacies of the Enhancement mode Gallium Nitride High Electron Mobility Transistor (E-mode GaN HEMT). A focus is placed on its static characterization, parameter analysis, and the influence of external parasitic inductances, particularly regarding oscillation challenges during its hard switching process. …”

Implementation And Characterization Of Low Noise Amplifier At 4GHz Using RF Test Board by Zainal Mokhtar, Khursiah

“…The purpose of this project is to implement and characterize a single state Pseudomorphic High Electron Mobility Transistor (PHEMT) Low Noise Amplifier (LNA) at 4GHz. …”
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Generalized 3D transverse magnetic mode method for analysis of interaction between drifting plasma waves in 2deg-structured semiconductors and electromagnetic space harmonic waves by Mustafa, Farahiyah, Hashim, Abdul Manaf

“…In this paper, the generalized three-dimensional (3D) transverse magnetic (TM) mode analysis to analyze the characteristics of two-dimensional electron gas (2DEG) drifting plasma at the III-V high-electron-mobility-transistor (HEMT) hetero-interface such as AlGaAs/GaAs hetero-interface and its interaction with propagating electromagnetic space harmonic wave is presented. …”
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Open-gated ph sensor fabricated on an undoped-algan/gan hemt structure by Zainal Abidin, Mastura Shafinaz, Hashim, Abdul Manaf, Sharifabad, Maneea Eizadi, Abd. Rahman, Shaharin Fadzli, Sadoh, Taizoh

“…The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. …”

Comparative analysis of sokal's equations versus load-pull implementation of class e low-pass network by Kirish, Boodhoo, Zubir, Farid, A. Rahim, Mohamad Kamal, Mohd. Shah, Shaharil

“…The viability of Sokal’s equations for present communication systems aimed at GHz are analyzed for high efficiency using HEMT (high-electron-mobility transistor) on Nitronex NPTB00004 as opposed to the Bipolar Junction Transistor used by Sokal in 1975. …”
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