Commercialization of group III nitrides-on-silicon technologies by Seetoh, Ian Peiyuan.

Get full text

AlGaN/GaN HEMT With 300-GHz fmax by Chung, Jinwook, Hoke, William E., Chumbes, Eduardo M., Palacios, Tomas

“…We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). …”
Get full text
Get full text

GateLESS-FET pH sensor fabricated on undoped-AlGaN/GaN HEMT structure by Zainal Abidin, Mastura Shafinaz, Abd Rahman, Shaharin Fadzli, Hashim, Abdul Manaf, Abdul Rahman, Abdul Rahim

“…Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. …”

Approach for Extreme Learning Machine-Based Microwave Power Device Modeling by Qian Lin, Xiao-Zheng Wang, Hai-Feng Wu, Li-Ning Jia

“…These experimental results demonstrate that the established ELM model is an efficient and valid approach for modeling GaN high electron mobility transistor types of nonlinear microwave devices.…”
Get full text

A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br /> by Giovanni Crupi, Mariangela Latino, Giovanni Gugliandolo, Zlatica Marinković, Jialin Cai, Gianni Bosi, Antonio Raffo, Enza Fazio, Nicola Donato

“…The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of the GaN material. …”
Get full text

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks by Jinxiang Zhao, Feng Wang, Hanchao Yu, Shengli Zhang, Kuisong Wang, Chang Liu, Jing Wan, Xiaoxin Liang, Yuepeng Yan

“…The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. …”
Get full text

Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse by Lei Wang, Changchun Chai, Tianlong Zhao, Fuxing Li, Yingshuo Qin, Yintang Yang

“…In this paper, the damage effects of a high-power electromagnetic pulse (EMP) on the GaN high-electron-mobility transistor (HEMT) were investigated in detail. …”
Get full text

A 7–13 GHz 10 W High-Efficiency MMIC Power Amplifier in 0.25 µm GaN HEMT Process by Aizhen Hu, Yongqing Leng, Xin Qiu, Tongyao Luan, Yatao Peng

“…This amplifier consists of a two-stage circuit structure with two high electron mobility transistor (HEMT) cells for the driver stage and four HEMT cells for the power stage. …”
Get full text

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications by An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, Hao-Chung Kuo

“…A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. …”
Get full text

Um sistema de módulos NIM conjugados com entrada opcional por amplificador pHEMT para espectroscopia beta e gama by Bárbara Konrad, Everton Lüdke

“…Para uso com cintiladores líquidos e fotodiodos com cristais de (CsI:Tl) propõe-se a inclusão de um circuito pré-amplificador pHEMT (pseudomorphic High Electron Mobility Transistor) integrado. Ainda, o sistema apresenta possibilidade de aplicações para diversos fins de espectroscopia gama e detecção automática de eventos produtores de partículas beta…”
Get full text

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al₂O₃ Gate Stacks by Lixiang Chen, Zhiqi Lu, Chaowei Fu, Ziqiang Bi, Miaoling Que, Jiawei Sun, Yunfei Sun

“…In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. …”
Get full text

A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction by Xianhe Sang, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan, Dandan Sang

“…This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. …”
Get full text

AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES by M. V. Rzheutski, Ja. A. Solovjov, A. G. Vainilovich, I. Ya. Svitsiankou, A. N. Pyatlitski, D. V. Zhyhulin, E. V. Lutsenko

“…The determined optimal epitaxy conditions for AlN and AlGaN layers were used to grow the AlGaN/GaN high electron mobility transistor structure on a sapphire substrate with two-dimensional electron gas, which had a mobility of 1950 cm2/(Vs) at a concentration of 1.15×1013 cm-2. …”
Get full text

Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction by Longfei Yang, Huiqing Sun, Ruipeng Lv, Zhen Liu, Yuanhao Zhang, Penglin Wang, Yuan Li, Yong Huang, Zhiyou Guo

“…This paper presents a GaN-based High Electron Mobility Transistor (HEMT) with a connected dual-channel structure (CDC-HEMT). …”
Get full text

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications by Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang

“…In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. …”
Get full text

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices by Jianming Lei, Yangyi Liu, Zhanmin Yang, Yalin Chen, Dunjun Chen, Liang Xu, Jing Yu

“…In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (<i>R_dson</i>) is first accurately extracted via our extraction circuit based on a double-diode isolation (DDI) method using a high operating frequency of up to 1 MHz and a large drain voltage of up to 600 V; thus, the unique problem of an increase in the dynamic <i>R_dson</i> is presented. …”
Get full text

Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT by Jill Mayeda, Donald Y. C. Lie, Jerry Lopez

“…First, a single-ended broadband PA that employs a third-order input matching network is designed in a 40 nm GaN/SiC HEMT (High Electron Mobility Transistor) technology. Good agreement between the measurement and post-layout parasitic extracted (PEX) electromagnetic (EM) simulation data is observed, and it achieves a measured 3-dB BW (bandwidth) of 18.0–40.3 GHz and >20% maximum PAE (power-added-efficiency) across the entire 20–44 GHz band. …”
Get full text

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer by You-Chen Weng, Yueh-Chin Lin, Heng-Tung Hsu, Min-Lu Kao, Hsuan-Yao Huang, Daisuke Ueda, Minh-Thien-Huu Ha, Chih-Yi Yang, Jer-Shen Maa, Edward-Yi Chang, Chang-Fu Dee

“…An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. …”
Get full text

Hemispherical lens integrated room temperature ultra-broadband GaAs HEMT terahertz detector by Chenyu Yao, Chenyu Yao, Mengjie Jiang, Dong Wang, Libo Zhang, Libo Zhang, Ning Zhang, Lin Wang, Xiaoshuang Chen

“…Here, we report that a self-mixing terahertz detector based on hemispherical silicon lens and antenna-coupled InGaAs/AlGaAs high electron mobility transistor (HEMT) enables wide spectrum detection, and improves detection performances. …”
Get full text

The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application by Jin-Ji Dai, Thi Thu Mai, Umeshwar Reddy Nallasani, Shao-Chien Chang, Hsin-I Hsiao, Ssu-Kuan Wu, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Chieh-Piao Wang, Luc Huy Hoang

“…The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical vapor deposition (MOCVD). …”
Get full text