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441
Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics
Published 2023-05-01“…Here, a magnetosensory power device (MPD) that integrates a magnetic film ((Fe90Co10)78Si12B10) unit into a cantilever‐structured AlGaN/GaN‐based high‐electron‐mobility‐transistor is presented. The MPD is capable to not only sense external magnetic field, but also control device output power with the emulation of magnetoreception. …”
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Article -
442
Design and development of highly textured boron nitride thin films for electronic devices
Published 2021“…As evaluated by the performance as a thermal self-dissipative layer on AlGaN/GaN high electron mobility transistor (HEMT), the isotopically enriched layer is capable of reducing thermal self-heating effects, although the device may not be as well-functioning as it ought to be due to the ion implantation damage done on the 2-dimensional electron gas. …”
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Thesis-Doctor of Philosophy -
443
Development of superconducting thin film travelling wave parametric amplifiers
Published 2023“…They have been experimentally verified to achieve high gain over broad bandwidth and quantum-limited noise performance with negligible heat dissipation, making them a natural successor to the current generation of semiconductor-based high electron mobility transistor (HEMT) amplifiers, which are the current standard in low-noise amplification. …”
Thesis -
444
Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
Published 2023-02-01“…This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. …”
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Article -
445
Structural and electrical characterization of GaN based HEMT heterostructures on SiC
Published 2017“…This research project involves the structural and electrical characterization of AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate by plasma-assisted molecular beam epitaxy (PA-MBE). …”
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Thesis -
446
Remarkable Reduction in I<sub>G</sub> with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Sta...
Published 2022-12-01“…We demonstrated the performance of an Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 °C for 10 min. …”
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Article -
447
Highly lattice-mismatched epitaxy for III-V/Si integration
Published 2018“…Indium antimonide (InSb) is a competitive semiconductor for the applications in high electron mobility transistor and mid-infrared photodetector. …”
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Thesis -
448
New Submicron Low Gate Leakage In<sub>0.52</sub>Al<sub>0.48</sub>As-In<sub>0.7</sub>Ga<sub>0.3</sub>As pHEMT for Low-Noise Applications
Published 2021-11-01“…Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. …”
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Article -
449
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
Published 2024-01-01“…At the frequency of 3.6 GHz, compared with the conventional GaN HEMT (high electron mobility transistor) as PA, due to the field modulation effect of the dual-gate structure, the current collapse is effectively suppressed, and the output power density <inline-formula> <tex-math notation="LaTeX">$(P_{out})$ </tex-math></inline-formula> of the integrated device is increased from 6.90 W/mm to 7.85 W/mm, and the power added efficiency (PAE) is increased from 44.3% to 51.1%. …”
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Article -
450
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451
Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
Published 2013“…This dissertation focuses on the growth optimization and characterization of AlGaN/GaN heterostructures on 100-mm Si (111) substrates for high electron mobility transistor (HEMT) applications using plasma assisted molecular beam epitaxy (PA-MBE) and ammonia MBE techniques. …”
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Thesis -
452
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
Published 2021-05-01“…Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. …”
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Article -
453
Plasma wave resonances in Graphene channels under controlled gate for high frequency applications
Published 2023-01-01“…Moreover, High Electron Mobility Transistors (HEMTs) have emerged as important competitors owing to the high quality of resonances associated with plasma-wave oscillations in the channel. …”
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Article -
454
Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs
Published 2023-09-01“…Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. …”
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Article -
455
Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing
Published 2023-01-01“…This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. …”
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Article -
456
Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
Published 2022“…This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. …”
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Final Year Project (FYP) -
457
Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs
Published 2010“…In this paper, we demonstrate the first on-wafer integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs.…”
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Article -
458
Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
Published 2013“…This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. …”
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Conference Paper -
459
Wideband Modeling of DC-DC Buck Converter with GaN Transistors
Published 2021-07-01“…The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. …”
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Article -
460