Surface Dispersion Suppression in High-Frequency GaN Devices by Pengfei Zhu, Xianfeng Ni, Qian Fan, Xing Gu

“…GaN-based high electron mobility transistors (HEMTs) are shown to have excellent properties, showing themselves to perform well among the throng of solid-state power amplifiers. …”
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Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO₂ Gate Dielectric by Min Jae Yeom, Jeong Yong Yang, Chan Ho Lee, Junseok Heo, Roy Byung Kyu Chung, Geonwook Yoo

“…AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO₂ have been investigated. …”
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Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT by Censong Liu, Jie Wang, Zhanfei Chen, Jun Liu, Jiangtao Su

“…The aim of this paper is to model the effects of threading dislocations on both gate and drain currents of AlGaN/GaN high electron mobility transistors (HEMTs). The fraction of filled traps increases with the threading dislocations, while the trapping effects cause a decrease in drain current and an increase in gate leakage current. …”
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Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications by Lucas Lu, Guanliang Liu, Kevin Bai

“…Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. …”
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Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN by Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

“…The findings provide important process guidelines for the use of ALD ZrO2 and its pre-ALD surface treatments for high-k AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors and other related device applications.…”
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Diamond/GaN HEMTs: Where from and Where to? by Joana C. Mendes, Michael Liehr, Changhui Li

“…However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. …”
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Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors by Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot, Bassem Salem

“…These results present a promising pathway toward more reliable and stable normally‐OFF GaN‐based MOS‐channel high electron mobility transistors (MOSc‐HEMTs).…”
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Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation by Moath Alathbah, Khaled Elgaid

“…In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. …”
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Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization by Greco Giuseppe, Giannazzo Filippo, Frazzetto Alessia, Raineri Vito, Roccaforte Fabrizio

“…<p>Abstract</p> <p>The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electron microscopy, atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM). …”
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Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate by Hiroyuki Nishinaka, Osamu Ueda, Noriaki Ikenaga, Noriyuki Hasuike, Masahiro Yoshimoto

“…We believe that the lattice-matched κ-(In1−xGax)2O3 thin film with an ε-GaFeO3 substrate will contribute significantly to the demonstration of ferroelectric κ-Ga2O3 based high electron mobility transistors.…”
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Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs by Tamiris Grossl Bade, Hassan Hamad, Adrien Lambert, Hervé Morel, Dominique Planson

“…The threshold voltage instability in p-GaN gate high electron mobility transistors (HEMTs) has been brought into evidence in recent years. …”
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An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT by Enrico Alfredo Bottaro, Santi Agatino Rizzo

“…GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems. …”
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Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN_x/SiON as Composite Gate Dielectric by Xiaodong Zhang, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan, Guohao Yu, Zhihua Dong, Houqiang Fu, Yong Cai, Kai Fu, Baoshun Zhang

“…This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiN_x/SiON composite gate dielectric. …”
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High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer by Ki-Sik Im, Siva Pratap Reddy Mallem, Jin-Seok Choi, Young-Min Hwang, Jae-Seung Roh, Sung-Jin An, Jae-Hoon Lee

“…We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional device without an in situ cap layer. …”
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Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate by Lu, Bin, Piner, Edwin L., Palacios, Tomas

“…AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. …”
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A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss by Takehiro Takahashi, Takumi Takehisa, Jun Furuta, Michihiro Shintani, Kazutoshi Kobayashi

“…This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off. …”
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Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs by Maodan Ma, Yanrong Cao, Hanghang Lv, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao

“…In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the buffer layer. …”
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Applying normally-off GaN HEMTs for coreless high-frequency wireless chargers by Wei Qian, Xi Zhang, Yongsheng Fu, Juncheng Lu, Hua Bai

“…Wide-bandgap (WBG) devices such as Gallium-Nitride (GaN) High Electron Mobility Transistors (HEMTs) have become popular in the power electronics industry as they offer a lower switching loss, higher thermal capability and higher power density than conventional silicon devices. …”
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Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization by Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao

“…The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. …”
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Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures by Wenping Gu, Xiaobo Xu, Lin Zhang, Zhiyuan Gao, Xiaochuan Hu, Zan Zhang

“…The GaN-based heterostructures and related HEMTs (High Electron Mobility Transistors) were investigated by 1MeV neutrons at fluences up to 1015 cm&minus;2, yielding an increase of the densities of screw dislocations and edge dislocations for GaN-based heterostructures. …”
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