Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system by V. S. Volcheck, I. Yu. Lovshenko, V. T. Shandarovich, Dao Dinh Ha

“…The subject of the research is the electrical, frequency and thermal characteristics of the gallium nitride high-electron mobility transistor with a graphene-based heat removal system. …”
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Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors by Chul-Min Kim, Hyun-Soo Yoon, Jong-Soo Kim, Nam-Joon Kim

“…This paper presents a circuit for detecting and protecting against short circuits in E-mode gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection performance of the circuit. …”
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High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor by Teng, J. H., Hou, Han Wei, Liu, Zhihong, Palacios, Tomas, Chua, Soo-Jin

“…In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. …”
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Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate by Demirtas, Sefa, del Alamo, Jesus A.

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors by Joh, Jungwoo, del Alamo, Jesus A.

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Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors by Marino, Fabio Alessio, Faralli, Nicolas, Palacios, Tomas, Ferry, David K., Goodnick, Stephan M., Saraniti, Marco

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Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors by Lu, Bin, Palacios, Tomas, Piner, Edwin L.

“…In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. …”
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Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications by Tan, Chee Leong

“…A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage and a high drain current. …”
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Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE by Yip, Kim Hong.

“…This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).…”
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Studies of traps in AlGaN/GaN high electron mobility transistors on silicon by Anand Mulagumoottil Jesudas

“…AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-frequency and high-power applications such as DC-DC convertors, cellular base stations, radar and wireless communication systems. …”
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Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT) by Seah, Alex Tian Long

“…For higher frequency operation, the device such as high electron mobility transistor (HEMT) needs to be scaled down by reducing the gate length. …”
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ENHANCED CARRIER DENSITIES AND DEVICE PERFORMANCE IN PIEZOELECTRIC PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR STRUCTURES by Sanchezdehesa, J, Sanchezrojas, J, Lopez, C, Nicholas, R

Design fabrication and characterization of undoped AIGaN/GaN based high electron mobility transistor / by H. Sivanesswara Naidu, 1982-, Abdul Manaf Hashim

Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors by Yunqian Song, Chuan Chen, Qidong Wang, Jianyu Feng, Rong Fu, Xiaobin Zhang, Liqiang Cao

“…Cooling is important for AlGaN/GaN high-electron mobility transistors (HEMTs) performance. In this paper, the advantages and disadvantages of the cooling performance of three cooling schemes: remote cooling (R-cool), near-chip cooling (NC-cool), and chip-embedded cooling (CE-cool) are compared. …”
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Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages by Yuan Lin, Min-Lu Kao, You-Chen Weng, Chang-Fu Dee, Shih-Chen Chen, Hao-Chung Kuo, Chun-Hsiung Lin, Edward-Yi Chang

“…Substrate voltage (V_SUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. …”
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Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors by Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, Yuto Ando, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, Yuji Ando, Hiroshi Amano

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Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO₂ Detection by Zhixiang Hu, Licheng Zhou, Long Li, Binzhou Ying, Yunong Zhao, Peng Wang, Huayao Li, Yang Zhang, Huan Liu

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Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses by Jingtao Zhao, Quanyou Chen, Chaoyang Chen, Zhidong Chen, Zhong Liu, Gang Zhao

“…In this study, a new interference phenomenon was observed when the microwave pulses were injected into the gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier through the output port. …”
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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures by Justinas Jorudas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, Irmantas Kašalynas

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High Al-content AlGaN channel high electron mobility transistors on silicon substrate by J. Mehta, I. Abid, J. Bassaler, J. Pernot, P. Ferrandis, M. Nemoz, Y. Cordier, S. Rennesson, S. Tamariz, F. Semond, F. Medjdoub

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