Breakdown Voltage Enhancement in AlGaN HEMTs with Local p-Doped Region in the Back-Barrier by Pei Shen, Kai Wang, Ling Chen, Yi Fang, Yuqi Liu, Hong Wang

“…We employed the local p-doped region with a concentration of 3 × 10¹⁶ cm⁻³, 5 × 10¹⁶ cm⁻³ and 7 × 10¹⁶ cm⁻³ in the back-barrier of full-AlGaN high electron mobility transistors (HEMTs). Further enhancement of the breakdown voltage (BV) with less influence on drain–current density (I_D) is demonstrated. …”
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Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs by Jaeyong Jeong, Dae-Myeong Geum, SangHyeon Kim

“…Successful fabrication of the high-performance InGaAs high electron mobility transistors (HEMTs) on the bottom ICs, with a high unity current gain cutoff frequency (<i>f</i>_T) and unity power gain cutoff frequency (<i>f</i>_MAX) was accomplished without substrate noise. …”
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Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT by Ching-Yao Liu, Chih-Chiang Wu, Li-Chuan Tang, Yueh-Tsung Shieh, Wei-Hua Chieng, Edward-Yi Chang

“…In order to achieve maximum power delivered to load (PDL), we need to elevate the input voltage as high as the high breakdown-voltage of gallium nitride (GaN) high-electron mobility transistors (HEMT) along with class E amplifier circuit topology. …”
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On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs by Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Giovanni Verzellesi

“…The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. …”
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Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications by Kim, Dae-Hyun, del Alamo, Jesus A.

“…We have experimentally studied the scaling behavior of sub-100-nm InAs high-electron mobility transistors (HEMTs) on InP substrate from the logic operation point of view. …”
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Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs by Ki-Sik Im, Jae-Hoon Lee, Yeo Jin Choi, Sung Jin An

“…We investigated the effects of GaN buffer resistance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on direct current (DC), low-frequency noise (LFN), and pulsed <i>I</i>-<i>V</i> characterization performances. …”
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Comprehensive Review of Power Electronic Converters in Electric Vehicle Applications by Rejaul Islam, S M Sajjad Hossain Rafin, Osama A. Mohammed

“…This article is intended to help engineers and researchers forecast typical recharging/discharging durations, the lifetime of energy storage with the help of control systems and machine learning, and the performance probability of using AlGaN/GaN heterojunction-based high-electron-mobility transistors (HEMTs) in EV systems. The analysis of this extensive review paper suggests that the Vienna rectifier provides significant performance among all AC–DC rectifier converters. …”
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Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy by Kazuma Takeuchi, Hiroyuki Ogura, Noriyuki Hasuike, Takeshi Kamikawa

“…Abstract Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. …”
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications by Saadat, Omair I

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Characterization of gallium nitride materials for high-frequency and high-power devices by Yusuf Anindita Wibawa.

“…However, the performance of AlGaN/GaN heterostructure High Electron Mobility Transistors (HEMTs) may depend on the ohmic contact characteristic at the interface of the heterostructure. …”
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Material characterization of AlGaN/GaN based HEMT structures by Nur Hidayat Bin Hatwi

“…HEMTs (high electron mobility transistors) have excellent properties such as high voltage tolerance and high power characteristics, hence enabling them to be used in a wide range of applications. …”
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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer by Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim

“…The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO₂ gate dielectric layer. …”
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TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE by Luigi Balestra, Franco Ercolano, Elena Gnani, Susanna Reggiani

“…Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs) actually represent one of the best candidates for medium-high power and radio frequency applications. …”
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Accurate estimation of thermal properties for AlGaN/GaN HEMTs on diamond by Yao Li, Yulong Chen, Chao Zhang, Xi Wang, Hongbin Pu

“…For accurate estimation of the thermal characteristics of AlGaN/GaN high electron mobility transistors on diamond, the anisotropic thermal conductivities of polycrystalline diamond (PCD) and GaN with their thickness dependences are included in the finite element simulation model, of which the PCD thermal conductivity kPCD is calculated through detailed analyses of the grain sizes in the directions parallel and vertical to the interface and relative phonon-grain boundary scatterings. …”
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Feasibility of Quasi-Square-Wave Zero-Voltage-Switching Bi-Directional DC/DC Converters with GaN HEMTs by Furkan Karakaya, Özgür Gülsuna, Ozan Keysan

“…These new capabilities brought by the GaN High Electron Mobility Transistors (HEMTs) inevitably changes the feasible operation ranges of power converters. …”
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The GaN Breakthrough for Sustainable and Cost-Effective Mobility Electrification and Digitalization by Filippo Scrimizzi, Federica Cammarata, Giuseppe D’Agata, Gabriele Nicolosi, Salvatore Musumeci, Santi Agatino Rizzo

“…In this perspective, the Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are the best enabler device technology. …”
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Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate by Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao

“…The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future.…”
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Fabrication and Characterization of In_0.53Ga_0.47As/InAs/In_0.53Ga_0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate by Seung Heon Shin, Jae-Phil Shim, Hyunchul Jang, Jae-Hyung Jang

“…In this work, we successfully demonstrated In_0.53Ga_0.47As/InAs/In_0.53Ga_0.47As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. …”
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Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications by Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang

“…This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. …”
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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu

“…In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. …”
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