Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor by Ramdas P. Khade, Sujan Sarkar, Ajay Shanbhag, Amitava DasGupta, Nandita DasGupta

“…In this paper, kink effect observed in the output characteristics of the AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting the Si-substrate to positive/negative bias stress has been studied. …”
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Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers by Sheng-Yi Tang

Subjects: “…enhancement-mode gallium-nitride high-electron-mobility transistor…”
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Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors by Zhongxu Wang, Jiao Nan, Zhiwen Tian, Pei Liu, Yinhe Wu, Jincheng Zhang

Subjects: “…p-type doped gallium nitride high-electron-mobility transistor (p-GaN HEMT)…”
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Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors by Jayanta Joglekar, Sameer

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Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors by Warnock, Shireen M

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Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors by Lee, Ethan Sukrae

“…The most promising device structure for power electronics is the enhancement-mode p-GaN Gate High Electron Mobility Transistor (HEMT) which matches the power, voltage, and efficiency of conventional GaN FETs but most importantly features a positive threshold voltage. …”
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Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors by Wong, Melinda F

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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress by Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.

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Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) by Hu, Shihao

“…This study investigates the failure mechanisms of Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) under high electric field through reverse bias stress condition. …”
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Characterization of InP based high electron mobility transistor structures grown by solid source MBE by Too, Patrick Heng Kwee.

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On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon by Syaranamual, Govindo Joannesha

“…Monolithic integration of AlGaN/GaN high electron mobility transistor (HEMT) into silicon (Si) platform is very attractive as this is a cost-effective solution to extend the capabilities of silicon technology especially for high power and high frequency applications. …”
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Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors by Ling-Feng Mao

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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability by Fanming Zeng, Judy Xilin An, Guangnan Zhou, Wenmao Li, Hui Wang, Tianli Duan, Lingli Jiang, Hongyu Yu

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A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas by Hou, Haowen, Liu, Zhihong, Teng, Jinghua, Chua, Soo-Jin, Palacios, Tomas

“…We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. …”
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Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors by Lednev, Alexander I.(Alexander Igorevich)

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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors by Joh, Jungwoo, del Alamo, Jesus A.

“…In this work, we investigate the time evolution of electrical degradation of GaN high electron mobility transistors under high voltage stress in the OFF state. …”
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A compact transport and charge model for GaN-based high electron mobility transistors for RF applications by Radhakrishna, Ujwal

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Fabrication and characterization of AlGaAs/InGaAs-based pseudomorphic high electron mobility transistors (pHEMTs) by Lee, Hou Jang.

“…This work demonstrates the fabrication and operation of several types of pseudomorphic high electron mobility transistors (pHEMTs) and heterostructure field effect transistors (HFETs), which were our initial effort in gallium arsenide (GaAs) device fabrication. …”
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Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications by Chenbi Li, Xinghuan Chen, Zeheng Wang

“…Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. …”
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Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss by Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen

“…In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz. …”
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