Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures by Mohammad Abdul Alim, Abu Zahed Chowdhury, Shariful Islam, Christophe Gaquiere, Giovanni Crupi

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Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric by Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, Kuan-Wei Lee, Yeong-Her Wang

Subjects: “…pseudomorphic high-electron-mobility transistor (PHEMT)…”
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24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN_{<italic>x</italic>} Layer by Junji Kotani, Junya Yaita, Kenji Homma, Shirou Ozaki, Atsushi Yamada, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura

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High Selectivity Hydrogen Gas Sensor Based on WO₃/Pd-AlGaN/GaN HEMTs by Van Cuong Nguyen, Ho-Young Cha, Hyungtak Kim

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The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT by Di Niu, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, Hongling Xiao, Qian Wang, Xiangang Xu, Xiaoliang Wang

Subjects: “…p-GaN high-electron-mobility transistor (HEMT)…”
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Novel Broadband Slot-Spiral Antenna for Terahertz Applications by Zhen Huang, Zhaofeng Li, Hui Dong, Fuhua Yang, Wei Yan, Xiaodong Wang

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Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor by V. S. Volcheck, V. R. Stempitsky

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Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors by Surajit Chakraborty, Tae-Woo Kim

“…The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. …”
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Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination by Yuan An, Kailin Ren, Luqiao Yin, Jianhua Zhang

“…The monolithic integration structure of the AlGaN/InGaN/GaN−based high electron mobility transistor (HEMT) and light−emitting diode (LED) is attractive in LED lighting and visible light communication (VLC) systems owing to the reduction in parasitic elements by removing metal interconnections. …”
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Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology by Yujian Zhang, Guojian Ding, Fangzhou Wang, Ping Yu, Qi Feng, Cheng Yu, Junxian He, Xiaohui Wang, Wenjun Xu, Miao He, Yang Wang, Wanjun Chen, Haiqiang Jia, Hong Chen

“…In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection. …”
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Scalable Small Signal and Noise Modeling of InP HEMT for THz Application by Ao Zhang, Jianjun Gao

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A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications by Nicholas C. Miller, Andrea Arias-Purdue, Erdem Arkun, David Brown, James F. Buckwalter, Robert L. Coffie, Andrea Corrion, Daniel J. Denninghoff, Michael Elliott, Dave Fanning, Ryan Gilbert, Daniel S. Green, Florian Herrault, Ben Heying, Casey M. King, Eythan Lam, Jeong-Sun Moon, Petra V. Rowell, Georges Siddiqi, Ioulia Smorchkova, Joe Tai, Jansen Uyeda, Mike Wojtowicz

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Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives by Patrick Ettore Longhi, Lorenzo Pace, Sergio Colangeli, Walter Ciccognani, Ernesto Limiti

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Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation by Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo

Subjects: “…p-GaN high-electron-mobility transistor (HEMT)…”
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Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study by Wei Lin, Maojun Wang, Haozhe Sun, Bing Xie, Cheng P. Wen, Yilong Hao, Bo Shen

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Analytical and Physical Investigation on Source Resistance in In<i>_x</i>Ga<i>_1−x</i>As Quantum-Well High-Electron-Mobility Transistors by Ji-Hoon Yoo, In-Geun Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim

“…We present a fully analytical model and physical investigation on the source resistance (<i>R_S</i>) in In<i>_x</i>Ga<i>_1−x</i>As quantum-well high-electron mobility transistors based on a three-layer TLM system. …”
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A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application by He Guan, Guiyu Shen, Shibin Liu, Chengyu Jiang, Jingbo Wu

“…The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V_knee</i>), saturation current density (<i>I_d-sat</i>), and cut-off frequency (<i>f_t</i>) of its high electron mobility transistor (HEMT) are simulated and analyzed. …”
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2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe^3&#x002B; Detection by Yan Gu, Xuecheng Jiang, Naiyan Lu, Jiarui Guo, Yushen Liu, Xifeng Yang, Weiying Qian, Xiangyang Zhang, Guoqing Chen, Tao Tao, Guofeng Yang

“…A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3&#x002B; specific detection. …”
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Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study by Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Kyeong-Yong Kim, Byoung-Gue Min, Dong Min Kang, Hyun-Seok Kim

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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state by Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili

“…Multichannel high electron mobility transistor (MC-HEMT) heterostructures are one of the choices for improved power performance of GaN HEMTs. …”
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