Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) by Abdelhamid Amar, Bouchaïb Radi, Hami El Abdelkhalak

“…The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. …”
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GaAs Nanomembranes in the High Electron Mobility Transistor Technology by Dagmar Gregušová, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera, Róbert Kúdela

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Multi-objective optimization of the high electron mobility transistor by Amar Abdelhamid, El Maani Rabii, Radi Bouchaïb, El Hami Abdelkhalak

“…In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems. …”
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Studies of gallium nitride high electron mobility transistors by Goh, Basil Yan Kun

“…With its unique highly polarization induced 2-Dimensional electron gas (2DEG), GaN-based High Electron Mobility Transistors (HEMTs) have been a focus in recent studies, aimed at improving and developing better fabrication techniques of devices for different appliances requiring highly linear power amplification or high temperature operations. …”
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Degradation mechanisms of GaN high electron mobility transistors by Joh, Jungwoo

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Two-dimensional simulation and design of high electron mobility transistors by Kam, Adele Hwei Ting

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Studies of gallium nitride high electron mobility transistors (HEMTs) by Tie, Keven Guo Sheng

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The simulation of high electron mobility transistor (HEMT) using silvaco software / by 444624 Ooi, Hooi Ean, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik

Modelling of GaN high electron mobility transistor on diamond substrate by Anwar Jarndal, Xuekun Du, Yuehang Xu

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Electric field engineering in GaN high electron mobility transistors by Zhao, Xu, S.M. Massachusetts Institute of Technology

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors by Joh, Jungwoo, del Alamo, Jesus A., Jimenez, Jose L., Tserng, Hua-Quen, Chou, Tso-Min, Chowdhury, Uttiya

“…In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I [subscript Dmax] and R [subscript ON]) with a synchronized pulsed I -V setup. …”
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Reliability of GaN high electron mobility transistors on silicon substrates by Demirtas, Sefa

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Physics of electrical degradation in GaN high electron mobility transistors by Joh, Jungwoo

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RF Power Degradation of GaN High Electron Mobility Transistors by Joh, Jungwoo, del Alamo, Jesus A.

“…We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. …”
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The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects by del Alamo, Jesus A.

“…2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. …”
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Degradation study of GaN-based high electron mobility transistors by Lius, Melina Novalia Jontera

“…This study aims to investigate the correlation between the electrical and physical deterioration of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) grown on Silicon (Si) substrates while being exposed to different stressing conditions.…”
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Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors by Radhakrishnan, K., Ng, Geok Ing., Yoon, Soon Fatt.

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Growth and characterization of metamorphic layer structures for high electron mobility transistors by Yuan, Kaihua.

“…InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. …”
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Characterizations of GaN-based high-electron-mobility-transistors (hemts) by Wong, Wei Jie.

“…Studies on the characteristics of AlGaN/GaN high-electron-mobility transistor (HEMTs) were performed based on the interest of understanding and evaluation of the device performance. …”
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Methodology for assessing the reliability of GaN high-electron-mobility transistors by Gunawan, Anton.

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