Showing 1 - 20 results of 50 for search '"interface trap"', query time: 0.63s Refine Results
  1. 1
    Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation

    Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation by Jongsu Kim, Kyushik Hong, Hyungcheol Shin

    Published 2020-01-01
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  2. 2
    Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

    Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects by Gyeongyeop Lee, Minki Suh, Minsang Ryu, Yunjong Lee, Jin-Woo Han, Jungsik Kim

    Published 2023-01-01
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  3. 3
    A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application

    A Simulation Study on the Effects of Interface Charges and Geometry on Vertical GAA GaN Nanowire MOSFET for Low-Power Application by Terirama Thingujam, Quan Dai, Eunjin Kim, Jung-Hee Lee

    Published 2021-01-01
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  4. 4
    Charge-pumping characterization of FILOX vertical MOSFETs

    Charge-pumping characterization of FILOX vertical MOSFETs by Grzegorz Głuszko, Lidia Łukasiak, Enrico Gili, Peter Ashburn

    Published 2023-06-01
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  5. 5
    Monolithic 3D Inverter with Interface Charge: Parameter Extraction and Circuit Simulation

    Monolithic 3D Inverter with Interface Charge: Parameter Extraction and Circuit Simulation by Tae Jun Ahn, Sung Kyu Lim, Yun Seop Yu

    Published 2021-12-01
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  6. 6
    Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

    Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique by Man Li, Yufeng Guo, Jiafei Yao, Jun Zhang, Fanyu Liu, Weihua Tang

    Published 2022-02-01
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  7. 7
    Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application

    Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application by Y. Ishii, Y.-J. Lee, W.-F. Wu, K. Maeda, H. Ishimura, M. Miura

    Published 2019-01-01
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  8. 8
    The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS

    The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS by Young-Taek Oh, Jae-Min Sim, Hisashi Kino, Deok-Kee Kim, Tetsu Tanaka, Yun-Heub Song

    Published 2019-01-01
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  9. 9
    Investigation of TSV Liner Interface With Multiwell Structured TSV to Suppress Noise Propagation in Mixed-Signal 3D-IC

    Investigation of TSV Liner Interface With Multiwell Structured TSV to Suppress Noise Propagation in Mixed-Signal 3D-IC by Hisashi Kino, Takafumi Fukusima, Tetsu Tanaka

    Published 2019-01-01
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  10. 10
    Impact of Sulfur Passivation on Carrier Transport Properties of In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs

    Impact of Sulfur Passivation on Carrier Transport Properties of In<sub>0.7</sub>Ga<sub>0.3</sub>As Quantum-Well MOSFETs by Jun-Gyu Kim, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Dae-Hyun Kim

    Published 2021-01-01
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  11. 11
    Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs

    Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs by Mu He, Peng Dong, Yao Ma, Qingkui Yu, Shuang Cao, Wende Huang, Qian Xu, Sijie Zhang, Mingmin Huang, Yun Li, Zhimei Yang, Min Gong

    Published 2024-05-01
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  12. 12
    Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

    Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer by Muhammad Quddamah Khokhar, Shahzada Qamar Hussain, Muhammad Aleem Zahid, Duy Phong Pham, Eun-Chel Cho, Junsin Yi

    Published 2021-12-01
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  13. 13
    Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs

    Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs by Susanna Yu, Marvin H. White, Anant K. Agarwal

    Published 2021-01-01
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  14. 14
    High-Pressure Oxidation on Ge: Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties

    High-Pressure Oxidation on Ge: Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties by ChoongHyun Lee

    Published 2020-06-01
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  15. 15
    Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN<sub>x</sub> Gate Dielectric at Different Temperatures

    Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN<sub>x</sub> Gate Dielectric at Different Temperat... by Dongsheng Zhao, Liang He, Lijuan Wu, Qingzhong Xiao, Chang Liu, Yuan Chen, Zhiyuan He, Deqiang Yang, Mingen Lv, Zijun Cheng

    Published 2024-01-01
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  16. 16
    Electrically Active Defects in SiC Power MOSFETs

    Electrically Active Defects in SiC Power MOSFETs by Mayank Chaturvedi, Daniel Haasmann, Hamid Amini Moghadam, Sima Dimitrijev

    Published 2023-02-01
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  17. 17
    Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

    Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique by Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han

    Published 2019-01-01
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  18. 18
    Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings

    Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings by Mingu Kang, Kyoungah Cho, Minhyeok Seol, Sangsub Kim, Sangsig Kim

    Published 2024-07-01
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  19. 19
    Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

    Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method by Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli

    Published 2021-01-01
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  20. 20
    Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors

    Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors by Youngseo Park, Jiyeon Ma, Geonwook Yoo, Junseok Heo

    Published 2021-02-01
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