Comparison and Optimization on Transverse Mode Instability of Fiber Laser Amplifier Pumped by Wavelength-Stabilized and Non-Wavelength-Stabilized 976 nm Laser Diode by Yingchao Wan, Baolai Yang, Xiaoming Xi, Hanwei Zhang, Peng Wang, Xiaolin Wang, Xiaojun Xu

“…By using a fiber laser amplifier with a bi-directional pumping structure, we obtain the TMI thresholds under wavelength-stabilized and non-wavelength-stabilized 976 nm laser diodes (LDs) pumping scheme. The results show that the non-wavelength-stabilized LD pump has a higher TMI threshold compared to the wavelength-stabilized LD pump. …”
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Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode by Shunsuke Kono, Rintaro Koda, Hideki Watanabe, Noriyuki Fuutagawa, Hironobu Narui

Subjects: “…mode-locked semiconductor laser diode…”
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Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier by Maryam Amirhoseiny, Ghasem Alahyarizadeh

“…Abstract The performance characteristics of InGaN double-quantum-well (DQW) laser diodes (LDs) with different last barrier structures are analyzed numerically by Integrated System Engineering Technical Computer Aided Design (ISE TCAD) software. …”
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Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold by Liefeng Feng, Xiufang Yang, Yang Li, Ding Li, Cunda Wang, Dongsheng Yao, Xiaodong Hu, Hongru Li

“…The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. …”
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Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm by Jia Xu Brian Sia, Xiang Li, Wanjun Wang, Zhongliang Qiao, X. Guo, Jiawei Wang, Callum G. Littlejohns, Chongyang Liu, Graham T. Reed, Kian Siong Ang, Hong Wang

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Coaxial recess integration of InGaAs edge emitting laser diodes with waveguides on silicon substrates : a complete solution to laser integration on ICs by Famenini, Shaya

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Analysis of compact silicon photonic hybrid ring external cavity (SHREC) wavelength-tunable laser diodes operating from 1881–1947 nm by Sia, Brian Jia Xu, Wang, Wanjun, Qiao, Zhongliang, Li, Xiang, Guo, Tina Xin, Zhou, Jin, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Wang, Hong

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Sub-kHz linewidth, hybrid III-V/silicon wavelength-tunable laser diode operating at the application-rich 1647-1690 nm by Sia, Brian Jia Xu, Li, Xiang, Wang, Wanjun, Qiao, Zhongliang, Guo, Xin, Zhou, Jin, Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Wang, Hong

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Using Diode Laser for the Determination of Blood Glucose Concentration by farah shmel, Nehia N. Hussien, Saria D. Mohamed

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Suppression of residual amplitude modulation appeared in commercial electro-optic modulator to improve iodine-frequency-stabilized laser diode using frequency modulation spectroscopy by Quang Anh Duong, Thanh Dong Nguyen, Thanh Tung Vu, Masato Higuchi, Dong Wei, Masato Aketagawa

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Performance of a Distributed Simultaneous Strain and Temperature Sensor Based on a Fabry-Perot Laser Diode and a Dual-Stage FBG Optical Demultiplexer by Shinwon Kang, Jeehyun Kim, Seungho Lee, Injae Yang, Hyungwoo Kwon, Suhwan Kim

Subjects: “…Fabry-Perot laser diode…”
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Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors by Kiran Saba, Anna Kafar, Jacek Kacperski, Krzysztof Gibasiewicz, Dario Schiavon, Takao Oto, Szymon Grzanka, Piotr Perlin

“…In this study, we propose a solution for realization of surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The presented system consists of a horizontal cavity lasing section adjoined with beam deflecting section in the form of 45° inclined planes. …”
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Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect by Sourav Roy, S.M. Tasmeeh Ahsan, Nibir Mondol, Md. Mahmudul Hasan, Diponkar Kundu, Shakil Mahmud Boby, Mehedi Hassan, Md. Sanwar Hossain, Md. Rasidul Islam, Md. Biplob Hossain, Shuvagoto Dhar, Md. Amzad Hossain

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Non-radiative Auger Current in a InGaN/GaN Multiple Quantum Well Laser Diode under Hydrostatic Pressure and Temperature by Rajab Yahyazadeh, Zahra Hashempour

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Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes by Lingrong Jiang, Jianping Liu, Aiqin Tian, Masao Ikeda, Liqun Zhang, Peng Wu, Wei Zhou, Hui Yang

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SELF-MIXING LASER VIBROMETER WITH RESOLUTION IN THE MICRO AND NANO METERS SCALE by L. E. Filgueira, C. T. Schmiegelow

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Design, Fabrication and Validation of Mixed Order Distributed Feed-Back Organic Diode Laser Cavity by Amani Ouirimi, Alex Chamberlain Chime, Nixson Loganathan, Mahmoud Chakaroun, Daan Lenstra, Alexis P. A. Fischer

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Organic Diode Laser Dynamics: Rate-Equation Model, Reabsorption, Validation and Threshold Predictions by Daan Lenstra, Alexis P.A. Fischer, Amani Ouirimi, Alex Chamberlain Chime, Nixson Loganathan, Mahmoud Chakaroun

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1.6-kV 1.5-kA GaAs Avalanche Semiconductor Switch Triggered by 4 μJ Laser Diode by Cheng Ma, Nuo Xu, Zenan Liu, Yuezheng Wang, Wei Shi

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>25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μm stripe laser diode with bulk active layer by L. W. Hallman, B. S. Ryvkin, E. A. Avrutin, J. T. Kostamovaara

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