Scalable magnetoreceptive e-skin for energy-efficient high-resolution interaction towards undisturbed extended reality by Pavlo Makushko, Jin Ge, Gilbert Santiago Cañón Bermúdez, Oleksii Volkov, Yevhen Zabila, Stanislav Avdoshenko, Rico Illing, Leonid Ionov, Martin Kaltenbrunner, Jürgen Fassbender, Rui Xu, Denys Makarov

“…Here, by incorporating the giant magnetoresistance effect and electrical resistance tomography, we achieve continuous sensing of magnetic fields across an area of 120 × 120 mm2 with a sensing resolution of better than 1 mm. …”
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Ferroelectric Single‐Molecule Magnet with Toroidal Magnetic Moments by Yu‐Xia Wang, Yinina Ma, Jie‐Su Wang, Yue Yang, Yun‐Nan Guo, Yi‐Quan Zhang, Kui‐Juan Jin, Young Sun, Peng Cheng

“…Nevertheless, such molecular materials are limited in potentials because their magnetic signal cannot be transformed into an electrical signal through magnetoresistance or Hall effects for their high insulativity. …”
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Pressure-induced transition from a Mott insulator to a ferromagnetic Weyl metal in La2O3Fe2Se2 by Ye Yang, Fanghang Yu, Xikai Wen, Zhigang Gui, Yuqing Zhang, Fangyang Zhan, Rui Wang, Jianjun Ying, Xianhui Chen

“…Abstract The insulator-metal transition in Mott insulators, known as the Mott transition, is usually accompanied with various novel quantum phenomena, such as unconventional superconductivity, non-Fermi liquid behavior and colossal magnetoresistance. Here, based on high-pressure electrical transport and XRD measurements, and first-principles calculations, we find that a unique pressure-induced Mott transition from an antiferromagnetic Mott insulator to a ferromagnetic Weyl metal in the iron oxychalcogenide La2O3Fe2Se2 occurs around 37 GPa without structural phase transition. …”
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PKBPNN-Based Tracking Range Extending Approach for TMR Magnetic Tracking System by Bowen Lv, Yuangui Chen, Houde Dai, Shijian Su, Mingqiang Lin

“…First, the state-of-the-art tri-axial tunnel magnetoresistance (TMR) sensors, which possess the most significant field sensitivity and signal-to-noise ratio (SNR) over other types of magnetoresistive sensors, were adopted to construct the sensor array. …”
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TOPICAL REVIEW: Highly spin-polarized materials and devices for spintronics by Koichiro Inomata et al.

“…We demonstrated giant tunnel magnetoresistance (TMR) of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs) using Co2FeSi0.5Al0.5 (CFSA(0.5)) Heusler alloy electrodes. …”
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Microstructural Characterization and Magnetic, Dielectric, and Transport Properties of Hydrothermal La₂FeCrO₆ Double Perovskites by Kang Yi, Zhiwei Wu, Qingkai Tang, Jiayuan Gu, Jie Ding, Liangdong Chen, Xinhua Zhu

“…A butterfly-like magnetoresistance (MR)–magnetic field (H) curve was observed in the LFCO ceramics at 5 K with an MR (5 K, 6 T) value of −4.07%. …”
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Research Progress in Rare Earth-Doped Perovskite Manganite Oxide Nanostructures by Weiren Xia, Zhipeng Pei, Kai Leng, Xinhua Zhu

“…Abstract Perovskite manganites exhibit a broad range of structural, electronic, and magnetic properties, which are widely investigated since the discovery of the colossal magnetoresistance effect in 1994. As compared to the parent perovskite manganite oxides, rare earth-doped perovskite manganite oxides with a chemical composition of LnxA1-xMnO3 (where Ln represents rare earth metal elements such as La, Pr, Nd, A is divalent alkaline earth metal elements such as Ca, Sr, Ba) exhibit much diverse electrical properties due to that the rare earth doping leads to a change of valence states of manganese which plays a core role in the transport properties. …”
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Lattice Dynamics, Transport and Thermoelectric Properties of Bi-Sb Alloys Obtained by Mechanical Alloying and Spark Plasma Sintering by Romain Viennois, Laurent Alvarez, Loïc Coulomb, Yassine El Mastour, Marco Fabbiani, Benjamin Villeroy, David Bérardan, Adrien Moll, Mickaël Beaudhuin

“…Moreover, we confirm the emergence of several new vibrational modes with Sb alloying that could be associated with Bi-Sb and Sb-Sb vibrations. Rather large magnetoresistance was observed for all samples at room temperature. …”
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Effect of Ar+ beam sputtering on the magnetic anisotropy of Fe thin films deposited on the MgO(001) substrate by Syed Sheraz Ahmad, Wei He, Yong-Sheng Zhang, Jin Tang, Yan Li, Qeemat Gul, Xiang-Qun Zhang, Zhao-Hua Cheng

“…Moreover surface magneto-optical Kerr effect (SMOKE) and anisotropic magnetoresistance (AMR) setups were used to investigate the magnetic properties of the Fe film. …”
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Biocompatibility of a Magnetic Tunnel Junction Sensor Array for the Detection of Neuronal Signals in Culture by Daniela Moretti, Mattia Lorenzo DiFrancesco, Mattia Lorenzo DiFrancesco, Parikshit Pratim Sharma, Silvia Dante, Edoardo Albisetti, Marco Monticelli, Riccardo Bertacco, Riccardo Bertacco, Daniela Petti, Pietro Baldelli, Pietro Baldelli, Fabio Benfenati, Fabio Benfenati

“…One alternative possibility for in vitro analysis is the use of magnetic sensor arrays based on Magnetoresistance. However, these sensors have never been used to perform long-term in vitro studies mainly due to critical biocompatibility issues with neurons in culture. …”
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The effect of annealing temperature on the magnetic anisotropy in Co ultrathin film on MgO(001) substrate by Yong-Sheng Zhang, Wei He, Jin Tang, Syed Sheraz Ahmad, Wei Zhang, Yan Li, Xiang-Qun Zhang, Zhao-Hua Cheng

“…The structure was measured by low energy electron diffraction (LEED), and the magnetic properties were measured using the anisotropic magnetoresistance (AMR) measurements and the longitudinal Magneto-optical Kerr effect magnetometer (MOKE). …”
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Controlling the Skyrmion Density and Size for Quantized Convolutional Neural Network by Aijaz H. Lone, Arnab Ganguly, Hanrui Li, Nazek El-Atab, Gianluca Setti, Gobind Das, and Hossein Fariborzi

“…Furthermore, we demonstrate skyrmion size and density tunability as parameters controlled by voltage, current, and magnetic field via Voltage-Controlled Magnetoresistance (VCMA) and Dzyaloshinskii-Moriya Interaction (DMI). …”
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Discovery of superconductivity and electron-phonon drag in the non-centrosymmetric Weyl semimetal LaRhGe3 by Mohamed Oudah, Hsiang-Hsi Kung, Samikshya Sahu, Niclas Heinsdorf, Armin Schulz, Kai Philippi, Marta-Villa De Toro Sanchez, Yipeng Cai, Kenji Kojima, Andreas P. Schnyder, Hidenori Takagi, Bernhard Keimer, Doug A. Bonn, Alannah M. Hallas

“…Our transport measurements reveal evidence for electron-hole compensation at low temperatures, resulting in a large magnetoresistance of 3000% at 1.8 K and 14 T. The carrier concentration is on the order of 1021/cm3 with high carrier mobilities of 2000 cm2/Vs. …”
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Rotational symmetry breaking in superconducting nickelate Nd0.8Sr0.2NiO2 films by Haoran Ji, Yi Liu, Yanan Li, Xiang Ding, Zheyuan Xie, Chengcheng Ji, Shichao Qi, Xiaoyue Gao, Minghui Xu, Peng Gao, Liang Qiao, Yi-feng Yang, Guang-Ming Zhang, Jian Wang

“…The azimuthal angular dependence of the magnetoresistance (R(φ)) manifests the rotational symmetry breaking from isotropy to four-fold (C4) anisotropy with increasing magnetic field, revealing a symmetry-breaking phase transition. …”
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Quantized non-volatile nanomagnetic domain wall synapse based autoencoder for efficient unsupervised network anomaly detection by Muhammad Sabbir Alam, Walid Al Misba, Jayasimha Atulasimha

“…We further propose nanoscale ferromagnetic racetracks with engineered notches hosting magnetic domain walls (DW) as exemplary non-volatile memory-based autoencoder synapses, where limited state (5-state) synaptic weights are manipulated by spin orbit torque (SOT) current pulses to write different magnetoresistance states. The performance of anomaly detection of the proposed autoencoder model is evaluated on the NSL-KDD dataset. …”
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Origin and Magnitude of ‘Designer’ Spin-Orbit Interaction in Graphene on Semiconducting Transition Metal Dichalcogenides by Wang, Zhe, Ki, Dong-Keun, Mauro, Diego, Berger, Helmuth, Morpurgo, Alberto F., Khoo, Jun Yong, Levitov, Leonid

“…We confirmed this expectation by measuring a gate-dependent beating, and a corresponding frequency splitting, in the low-field Shubnikov–de Haas magnetoresistance oscillations in high-quality bilayer graphene devices on WSe_{2}. …”
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Ambipolar ferromagnetism by electrostatic doping of a manganite by Zheng, L. M., Lü, W. M., Li, C. J., Paudel, T. R., Liu, Z. Q., Huang, Z., Zeng, S. W., Han, Kun, Qiu, X. P., Li, M. S., Yang, Shize, Wang, Xiao Renshaw, Chen, Z. H, Yang, B., Chisholm, Matthew F., Martin, L. W., Pennycook, S. J., Tsymbal, E. Y., Coey, J. M. D., Cao, W. W.

“…Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron–hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. …”
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Some computations on the band structure of metals by Cracknell, A

“…From these band structures the density of states and Fermi surface are computed and in Chapter VI the observable quantities deducible from them are considered; these include the temperature coefficient of the electronic specific heat, the Pauli spin paramagnetic susceptibility, the de Haas-van Alphen effect, the high pressure behaviour of the electrical resistance of calcium, the magnetoresistance, the Knight shift and the effective mass. …”

Characterization and conduction mechanism of La5/8Sr3/8MnO3 thin films prepared by pulsed laser deposition on different substrates by Navasery, Manizheh, Shaari, Abdul Halim, Bahmanrokh, Ghazaleh, Haghiri, Maryam Erfani, Soltani, Nayereh, Dehzangi, Arash, Kamalianfar, Ahmad, Ud Din, Fasih, Abdolmohammadi, Sanaz, Chen, Soo Kien, Lim, Kean Pah, Mehdipour, L. A., Anuar, A.

“…From the XRD patterns, the films are found polycrystalline single-phases. The highest magnetoresistance (MR) value obtained was −17.21% for LSMO/MgO film followed by −15.65% for LSMO/Si film at 80K in a 1T magnetic field. …”
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Electrical and magnetic properties of (In, Co) co-doped ZnO films deposited using radio frequency magnetron sputtering by Fen LIU, Ming-jiang DAI, Song-sheng LIN, Qian SHI, Hui SUN

“…Potential applications of DMSs include spin light-emitting diodes, spin field-effect transistors, magnetoresistance random access memory, and ultrafast optical switches. …”
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