Photovoltaic property of bismuth ferrite thin films and its application in non-volatile memory by Guo, Rui

“…The memory performance such as write energy, operation speed, retention time and fatigue cycles compare favorably with other memories, such as hard disk drive, flash memory, magnetoresistive random access memory and resistive switching random access memory.…”
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Nanomaterials science by Heinrich Rohrer

“…Components for counting electrons—more elegant and smaller than today's single-electron transistors—or adjustable holes for counting atoms and molecules will eventually be badly needed because of the 1/√N fluctuations in the properties and measurements at a small N, for example, N dopants in nanosize transistors or N electrons in very short current pulses.Bistable componentsBistable components, which do not require electrical currents, are aimed at reducing local energy dissipation and faster startup of personal computers. Magnetoresistive and ferroelectric random access memory (MRAMS and FRAMS) devices are the first attempts to use them in circuits. …”
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