A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications by Dai M, Hu Y, Huo C, Webster TJ, Guo L

“…Due to more complex algorithms and architectures required by neuroscience and other medical applications, various memory structures have been widely proposed and investigated by involving nanomaterials, such as memristors.Methods: Due to reliability issues of mass production, the dominant memory devices in many computers are still dynamic random access memory (DRAM). …”
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A review of defect structure and chemistry in ceria and its solid solutions by Schmitt, Rafael, Nenning, Andreas, Kraynis, Olga, Korobko, Roman, Frenkel, Anatoly I., Lubomirsky, Igor, Haile, Sossina M., Rupp, Jennifer Lilia Marguerite

“…These include solar energy-to-fuel conversion, solid oxide fuel and electrolyzer cells, memristors, chemical looping combustion, automotive 3-way catalysts, catalytic surface coatings, supercapacitors and recently, electrostrictive devices. …”
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Printed memtransistor utilizing a hybrid perovskite/organic heterojunction channel by Ma, C, Chen, H, Yengel, E, Faber, H, Khan, JI, Tang, M-C, Li, R, Loganathan, K, Lin, Y, Zhang, W, Laquai, F, McCulloch, I, Anthopoulos, TD

“…</em></cite>&nbsp;2016,&nbsp;<em>16</em>&nbsp;(11), 6724&minus;6732), traditional two-terminal memristors can perform only a single function while lacking heterosynaptic plasticity (&nbsp;<cite><em>Nanotechnology</em></cite>&nbsp;2013,&nbsp;<em>24</em>&nbsp;(38), 382001). …”

High Entropy Amorphous and Crystalline Li-Garnet Films for Lithionic Applications by Zhu, Yuntong

“…Safe, reliable, and Li+-conductive solid-state electrolytes are considered the key to unlocking the potential of solid-state and hybrid batteries, as well as lithionic devices beyond batteries, such as memristors and environmental gas sensors. The materials class of Li-garnet-type Li7La3Zr2O12-d (LLZO) has garnered attention because of its high Li+ conductivities, wide electrochemical stability windows, and non-flammability. …”
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One-Dimensional (NH=CINH3)3PbI5 Perovskite for Ultralow Power Consumption Resistive Memory by Xuefen Song, Hao Yin, Qing Chang, Yuchi Qian, Chongguang Lyu, Huihua Min, Xinrong Zong, Chao Liu, Yinyu Fang, Zhengchun Cheng, Tianshi Qin, Wei Huang, Lin Wang

“…The resistive random access memory (ReRAM) devices exhibit bipolar current-voltage (I-V) hysteresis characteristics, showing a record-low power consumption of ~0.2 mW among all OIHP-based memristors. Moreover, our devices own the lowest power consumption and “set” voltage (0.2 V) among the simplest perovskite-based memory devices (inorganic ones are also included), which are no need to require double metal electrodes or any additional insulating layer. …”
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Electrochemical and Transport processes in Ion Intercalation materials by Fraggedakis, Dimitrios

“…Li-ion batteries) and information (memristors) storage technologies, and provide insights and engineering solutions for next generation intercalation-based devices that deliver high efficiency and optimal performance. …”
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Engineering Functional Defects in Oxides Using External Stimuli by Wang, Jiayue

“…The findings and methodologies provided in this thesis help to establish a framework for defect genome, which can benefit materials design in a broad range of defect-sensitive applications including solid oxide fuel cells, memristors, and (electro)catalysts. In the first study, I investigated the surface defect equilibria and their strain dependency in La₀.₆Sr₀.₄FeO₃ (LSF) during oxygen incorporation reactions. …”
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Comparative study of post-growth annealing of Cu(hfac)2, Co2(CO)8 and Me2Au(acac) metal precursors deposited by FEBID by Marcos V. Puydinger dos Santos, Aleksandra Szkudlarek, Artur Rydosz, Carlos Guerra-Nuñez, Fanny Béron, Kleber R. Pirota, Stanislav Moshkalev, José Alexandre Diniz, Ivo Utke

“…Non-noble metals, such as Cu and Co, as well as noble metals, such as Au, can be used in a number modern technological applications, which include advanced scanning-probe systems, magnetic memory and storage, ferroelectric tunnel junction memristors, metal interconnects for high performance integrated circuits in microelectronics and nano-optics applications, especially in the areas of plasmonics and metamaterials. …”
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