Strain analysis comparison in complementary and nanosheet field-effect transistor devices: Nanobeam vs Bessel electron diffraction by Favia Paola, Veloso Anabela, Eneman Geert, Mehta Ankit Nalin, Zhou Xiuju, Richard Olivier, Geypen Jef, Grieten Eva

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Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs by Dong-Hyun Wang, Khwang-Sun Lee, Jun-Young Park

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Exploring the Performance of 3-D Nanosheet FET in Inversion and Junctionless Modes: Device and Circuit-Level Analysis and Comparison by V. Bharath Sreenivasulu, Aruna Kumari Neelam, Sekhar Reddy Kola, Jawar Singh, Yiming Li

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Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors by Jie Gu, Qingzhu Zhang, Zhenhua Wu, Yanna Luo, Lei Cao, Yuwei Cai, Jiaxin Yao, Zhaohao Zhang, Gaobo Xu, Huaxiang Yin, Jun Luo, Wenwu Wang

Subjects: “…Nanosheet FET…”
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Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes by Murad G. K. Alabdullah, M. A. Elmessary, D. Nagy, N. Seoane, A. J. Garcia-Loureiro, K. Kalna

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Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage by Changhyun Yoo, Jeesoo Chang, Sugil Park, Hyungyeong Kim, Jongwook Jeon

Subjects: “…multi-nanosheet FET…”
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Bayesian Optimization of MOSFET Devices Using Effective Stopping Condition by Bokyeom Kim, Mincheol Shin

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Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit by Pengwen Guo, Yuxue Zhou, Haolin Yang, Jiong Pan, Jiaju Yin, Bingchen Zhao, Shangjian Liu, Jiali Peng, Xinyuan Jia, Mengmeng Jia, Yi Yang, Tianling Ren

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Impact of Device-to-Device Thermal Interference Due to Self-Heating on the Performance of Stacked Nanosheet FETs by M. Balasubbareddy, K. Sivasankaran

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Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials by Theresia Knobloch, Siegfried Selberherr, Tibor Grasser

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Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors by Jinsu Jeong, Sanguk Lee, Rock-Hyun Baek

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A Novel Source/Drain Extension Scheme with Laser-Spike Annealing for Nanosheet Field-Effect Transistors in 3D ICs by Sanguk Lee, Jinsu Jeong, Bohyeon Kang, Seunghwan Lee, Junjong Lee, Jaewan Lim, Hyeonjun Hwang, Sungmin Ahn, Rockhyun Baek

Subjects: “…nanosheet FET…”
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Device Design Guidelines of 3-nm Node Complementary FET (CFET) in Perspective of Electrothermal Characteristics by Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, Hyun-Yong Yu

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Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors by Sanguk Lee, Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Junjong Lee, Jaewan Lim, Rock-Hyun Baek

Subjects: “…nanosheet FET…”
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Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET by Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, Hyun-Yong Yu

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Self-Heating-Based channel thermal noise of advanced Sub-5-nm-Node nanosheet FET by Ilho Myeong, Quan Nguyen-Gia, Ickhyun Song

Subjects: “…Nanosheet FET…”
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Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application by Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Rock-Hyun Baek

Subjects: “…Nanosheet FET…”
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Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors by Hyunjoon Jeong, Sangmin Woo, Jinyoung Choi, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim

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Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory by Jonghyeon Ha, Minji Bang, Gyeongyeop Lee, Minki Suh, Chong-Eun Kim, Jungsik Kim

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Machine Learning-Assisted Device Modeling With Process Variations for Advanced Technology by Yaoyang Lyu, Wangyong Chen, Mingyue Zheng, Binyu Yin, Jinning Li, Linlin Cai

Subjects: “…Nanosheet FETs…”
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