Plasmonically-enhanced all-optical integrated phase-change memory by Gemo, E, Carrillo, S, Degalarreta, C, Baldycheva, A, Hayat, H, Youngblood, N, Bhaskaran, H, Pernice, W, Wright, C

“…Such memory devices generally consist of integrated waveguide structures onto which are fabricated small phase-change memory cells. Switching these cells between their amorphous and crystalline states modifies significantly the optical transmission through the waveguide, so providing memory, and computing, functionality. …”

Photo-induced optical activity in phase-change memory materials by Borisenko, K, Shanmugam, J, Williams, B, Ewart, P, Gholipour, B, Hewak, D, Hussain, R, Jávorfi, T, Siligardi, G, Kirkland, A

“…We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. …”

Device-scale atomistic modelling of phase-change memory materials by Zhou, Y, Zhang, W, Ma, E, Deringer, VL

Investigation on the elastic properties and crystallization dynamics of phase-change memory material by Lu, Fei

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Integrated 256 cell photonic phase-change memory with 512-bit capacity by Feldmann, J, Youngblood, N, Li, X, Wright, CD, Bhaskaran, H, Pernice, WHP

Study of mixed mode electro-optical operations of Ge2Sb2Te5 by Rodriguez-Hernandez, G

Subjects:

Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials by Chen, Y, Sun, L, Zhou, Y, Zewdie, GM, Deringer, VL, Mazzarello, R, Zhang, W

Bonding similarities and differences between Y–Sb–Te and Sc–Sb–Te phase-change memory materials by Zhou, Y, Sun, L, Zewdie, GM, Mazzarello, R, Deringer, VL, Ma, E, Zhang, W

“…The scandium (Sc) – alloyed Sb2Te3 phase-change alloy has recently been found to enable ultrafast crystal nucleation due to the formation of Sc-stabilized octahedral motifs in the amorphous phase, rendering cache-type phase-change memory feasible. When yttrium (Y) is added, however, non-octahedral bonding patterns form in the amorphous Sb2Te3-based network even though Y has a valence electron configuration similar to that of Sc and also forms perfect octahedral bonding environments with tellurium in the YTe crystal. …”

Characterization of the Effects of Thickness and Composition in Current Induced Phase Change in Sb₂Se₃ and Sb₂S₃ by Bolzan, Maximilian Adriano

“…Phase-change memory is a promising new field for the world of memory storage, but current limitations such as slower switching speeds than current forms memory like random-access memory (RAM) and flash memory, have made the implementation of phase-change memory infeasible. …”
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Nanoscale optoelectronic memory with nonvolatile phase-change photonics by Youngblood, N, Farmakidis, N, Li, X, Bhaskaran, H

“…Waveguide-integrated plasmonic nanogap electrodes bridged by GST form a phase-change memory cell addressable in both the optical and electrical domains. …”

Chalcogenide phase change materials and their use by Borisenko, K

“…Methods of producing and analysing said material, as well as optical recording media and phase change memory devices comprising said material, are also provided.…”

Chemical bonding in phase-change chalcogenides by Müller, PC, Elliott, SR, Dronskowski, R, Jones, RO

“…Almost all phase-change memory materials (PCM) contain chalcogen atoms, and their chemical bonds have been denoted both as ‘electron-deficient’ [sometimes referred to as ‘metavalent’] and ‘electron-rich’ [‘hypervalent’, multicentre]. …”

Nanoscale thermal transport. II. 2003–2012 by Cahill, David G., Braun, Paul V., Chen, Gang, Clarke, David R., Fan, Shanhui, Goodson, Kenneth E., Keblinski, Pawel, King, William P., Mahan, Gerald D., Majumdar, Arun, Maris, Humphrey J., Phillpot, Simon R., Pop, Eric, Shi, Li

“…A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. …”
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Investigation of resistive random-accesss memory (RRAM) materials and devices by Sim, Wei Kiat

“…Hence, there is the development of emerging memory devices such as phase-change memory (PCM) and resistive random-access memory (RRAM) and spin-transfer torque random-access memory (STT-RAM). …”
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Structure and dynamics of supercooled liquid Ge2Sb2Te5 from machine‐learning‐driven simulations by Zhou, Y-X, Zhang, H-Y, Deringer, VL, Zhang, W

“…Studies of supercooled liquid phase‐change materials are important for the development of phase‐change memory and neuromorphic computing devices. …”

Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality by Farmakidis, N, Youngblood, N, Li, X, Tan, J, Swett, JL, Cheng, Z, Wright, CD, Pernice, WHP, Bhaskaran, H

“…Here, we combine plasmonics, photonics, and electronics to deliver an integrated phase-change memory cell that can be electrically or optically switched between binary or multilevel states. …”

Use of transistors as analog synapses by Tan, Daryl Chin Shih

“…Many devices such as memristors and phase-change memory have been researched as possible candidates for analog synapses. …”
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Fabrication and characterization of the electrical properties of phase change materials by Lam, Rachel Wei Qin

“…Phase change materials have been extensively studied due to their promising applications in phase change memory. Chalcogenide materials used in these memories can be switched repeatedly between the amorphous and crystalline phase and the corresponding different electrical properties can be used for data storage. …”
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Performance enhancements in large scale storage systems by Rajesh Vellore Arumugam

“…To overcome the limitations of the conventional storage system architecture, the thesis proposes a 3-tier hybrid architecture utilizing next generation Non-volatile memory (NVM) like Phase change memory (PCM), Hybrid drives and conventional drives. …”
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Tunable volatility of Ge2Sb2Te5 in integrated photonics by Youngblood, N, Ríos, C, Gemo, E, Feldmann, J, Cheng, Z, Baldycheva, A, Pernice, W, Wright, C, Bhaskaran, H

“…In this paper, a tunable volatile/nonvolatile response is demonstrated in a photonic phase‐change memory cell based on the commonly employed nonvolatile material Ge2Sb2Te5 (GST). …”