Printed circuit board embedded power semiconductors: A technology review by Till Huesgen

“…Embedding power semiconductor devices into printed circuit boards (PCB) provides several benefits compared to conventional packaging technologies. …”
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Development of short circuit detection and protection test for three-phase inverter by Goyle, Vakul

“…This also further increases and enhances the reliability of such systems. Power semiconductor devices such as IGBT’s have become an important component and the failure of these devices can cause catastrophic failure of the entire system. …”
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Remaining Useful Lifetime Prediction Based on Extended Kalman Particle Filter for Power SiC MOSFETs by Wei Wu, Yongqian Gu, Mingkang Yu, Chongbing Gao, Yong Chen

“…The SiC MOSFET, as one of the important third-generation wide bandgap power semiconductor devices, has received extensive attention. …”
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Development of high frequency equivalent electric circuits for capacitors and chokes taking into account frequency-dependent dielectric and magnetic permittivity properties of diel... by Vladimir F. Dmitrikov, Alexander Yu. Petrochenko, Lev E. Frid, Artyom E. Belyaev, Zinaida V. Zaitseva

“…Switching of power semiconductor devices in secondary power supplies is the main source of electromagnetic interference. …”
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Mitigation of Power Quality Issues Due to High Penetration of Renewable Energy Sources in Electric Grid Systems Using Three-Phase APF/STATCOM Technologies: A Review by Wajahat Ullah Khan Tareen, Muhammad Aamir, Saad Mekhilef, Mutsuo Nakaoka, Mehdi Seyedmahmoudian, Ben Horan, Mudasir Ahmed Memon, Nauman Anwar Baig

“…However, reducing the number of power semiconductor devices, sensors, and control circuits requires complex control strategies. …”
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Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management by Kechen Zhao, Jiwen Zhao, Xiaoyun Wei, Xiaoyu Guan, Chaojun Deng, Bing Dai, Jiaqi Zhu

“…Among bulk materials, diamond has the highest thermal conductivity (≥2000 W/mK), thereby prompting its application in high-power semiconductor devices for heat dissipation. In this paper, we report an innovative bottom-up Cu electroplating technique with a high-aspect-ratio (10:1) through-diamond vias (TDV). …”
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Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors by Gi-Young Lee, Min-Shin Cho, Rae-Young Kim

“…However, due to the high rate-of-rise of voltage (<i>dv/dt</i>) and of current (<i>di/dt</i>), compared to conventional Si-based power semiconductor devices, the reliability of the device is greatly affected by the parasitic inductance component in the switching loop. …”
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Common-Mode Voltage Reduction of Modular Multilevel Converter Using Adaptive High-Frequency Injection Method for Medium-Voltage Motor Drives by Jae-Woon Lee, Ji-Won Kim, Chee-Woo Lee, Byoung-Gun Park

“…This study proposes an adaptive high-frequency injection method (AHFI) aimed at mitigating common-mode voltage (CMV) on the AC side and alleviating current stress on power semiconductor devices within each arm of a medium-voltage motor propulsion system designed for modular multilevel converters. …”
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Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application by Kwang-Hyung Cha, Chang-Tae Ju, Rae-Young Kim

“…A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induction heating (IH) systems. …”
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Generalized Structures for Switched-Capacitor Multilevel Inverter Topology for Energy Storage System Application by Mu Anas, Adil Sarwar, Anzar Ahmad, Afroz Alam, Shafiq Ahmad, Mohamed Sharaf, Mazen Zaindin, Muhammad Firdausi

“…However, the MLI topologies utilize a large number of DC power supplies and power semiconductor devices. They also have a higher value of total standing voltage (TSV). …”
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Effect of Solder Layer Void Damage on the Temperature of IGBT Modules by Pengpeng Xu, Peisheng Liu, Lei Yan, Zhao Zhang

“…Solder layer void is one of the main failure causes of power semiconductor devices, which will seriously affect the reliability of the devices. …”
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Analysis and Design of a High-Efficiency SiC MOSFET 6-Phase Boost Rectifier by Giulia Di Nezio, Marco di Benedetto, Alessandro Lidozzi, Luca Solero

“…To select the appropriate power semiconductor devices, voltage and current ratings have to be determined. …”
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Design and implementation of a PI-PBC to manage bidirectional power flow in the DAB of an SST by Karol López-Rodríguez, Walter Gil-González, Andrés Escobar-Mejía

“…The interest of moving towards more sophisticated power grids and the possibility of having more efficient and reliable power semiconductor devices have enabled the introduction of new concepts in power systems, such as solid-state transformers (SSTs). …”
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X-ray topographic study of defects in Si-based multilayer epitaxial power devices by Iren L. Shul'pina, Vladimir A. Kozlov

“…Silicon based multilayered epitaxial structures are currently the main material for large-scale commercial fabrication of generally used power semiconductor devices such as fast recovery epitaxial diodes (FRED), isolate gate bipolar transistor (IGBT), power MOSFETs etc. …”
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A New Multilevel Inverter Topology with Reduced DC Sources by Muhyaddin Rawa, Prem P, Jagabar Sathik Mohamed Ali, Marif Daula Siddique, Saad Mekhilef, Addy Wahyudie, Mehdi Seyedmahmoudian, Alex Stojcevski

“…The higher number of power semiconductor devices and sources leads to a higher power loss with the complex control requirement. …”
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Analytical Current–Voltage Modeling and Analysis of the MFIS Gate-All-Around Transistor Featuring Negative-Capacitance by Yeji Kim, Yoongeun Seon, Soowon Kim, Jongmin Kim, Saemin Bae, Inkyung Yang, Changhyun Yoo, Junghoon Ham, Jungmin Hong, Jongwook Jeon

“…Recently, in accordance with the demand for development of low-power semiconductor devices, a negative capacitance field-effect-transistor (NC-FET) that integrates ferroelectric material into a gate stack and utilizes negative capacitive behavior has been widely investigated. …”
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A 5-kW unidirectional wireless power transfer EV charger with a novel multi-level PFC boost converter on front-end side by Obulesu Dakka, Sridhar Patthi, J. V. G. Rama Rao, Parveen Kumar

“…In contrast to wired EV chargers, wireless chargers often have poorer power conversion efficiency because of losses in power semiconductor devices. An innovative multi-level boost PFC rectifier design is offered as a solution to this problem since it uses fewer switches while retaining high-performance levels. …”
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A Hybrid Nine-Arm High-Voltage Inverter with DC-Fault Blocking Capability by Luyun Jiao, Dongyuan Qiu, Bo Zhang, Yanfeng Chen

“…The nine-arm inverter integrates two modular multilevel converters (MMCs) into one compact inverter to diminish the number of power semiconductor devices. It can be used for dual-motor driving or connecting two AC power sources in a multi-terminal high voltage direct current (HVDC) system, etc. …”
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Electronic ballast by Husain, Nik Muhammad Fashan

“…Electronic ballast can control the lamp power more easily and has higher efficiency since it uses the power semiconductor devices with better switching method. Even the cost for produce the electronic ballast is more expensive than conventional choke, it still has more advantage in lifetime operation because it is greater than conventional choke. …”
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Voltage tracking of a DC-DC buck-boost converter using gaussian fuzzy logic control by Omar, Gadaffi

“…DC-DC converter usually consists of power semiconductor devices which are operated as electronic switches. …”
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