Showing 161 - 166 results of 166 for search '"power semiconductor device"', query time: 0.14s Refine Results
  1. 161

    Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters by Minghui Yun, Daoguo Yang, Siliang He, Siliang He, Miao Cai, Jing Xiao, Kailin Zhang, Guo-Qi Zhang

    Published 2022-10-01
    “…The proposed approach would be an effective quality screening technology for power semiconductor devices without power on treatment, which can effectively avoid the impact of junction temperature and test conditions (current and voltage) on test results, and does not need to design additional test circuits. …”
    Get full text
    Article
  2. 162

    Study of the Solder Characteristics of IGBT Modules Based on Thermal–Mechanical Coupling Simulation by Jibing Chen, Bowen Liu, Maohui Hu, Shisen Huang, Shanji Yu, Yiping Wu, Junsheng Yang

    Published 2023-05-01
    “…The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. …”
    Get full text
    Article
  3. 163

    Study on Single Event Effect of SiC JFET Based on Experiment and Simulation by LI Rongjia1;JIA Yunpeng1,*;ZHOU Xintian1;HU Dongqing1;WU Yu1;TANG Yun1;XU Mingkang1;MA Lindong2;ZHAO Yuanfu1

    Published 2023-12-01
    “…The rapid growth of China’s aerospace sector, along with the creation of expansive space configurations like space stations, and the integration of high-performance electric propulsion systems require power semiconductor devices of increasingly better performance. …”
    Article
  4. 164

    Digital active gate drives to increase power semiconductor performance by Jones, GT

    Published 2021
    “…<p>Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) to improve the switching behaviour of these power semiconductor devices. The AGDs can slow down the transition when switching between the off and on states (and vice-versa) to reduce peak transient voltages and electromagnetic interference (EMI). …”
    Thesis
  5. 165

    Investigation and implementation of multilevel power converters for low/medium/high power applications by Ooi, Gabriel Heo Peng

    Published 2015
    “…This approach reduces the number of power semiconductor devices with distributed voltage sources in a single dc bus configuration. …”
    Get full text
    Thesis
  6. 166

    Condition monitoring of capacitors in power electronic converters by Sundararajan, Prasanth

    Published 2020
    “…A power converter is made up of components like capacitors, inductors, power semiconductor devices, gate drivers, sensors and a control unit. …”
    Get full text
    Thesis-Doctor of Philosophy