Acceleration for HEVC Encoder by Bimodal Segmentation of Rate-Distortion Cost and Accurate Determination of Early Termination and Early Split by Kuang-Han Tai, Mei-Juan Chen, Jie-Ru Lin, Ren-Yuan Huang, Chia-Hung Yeh, Chia-Yen Chen, Shinfeng D. Lin, Ro-Min Weng, Chuan-Yu Chang

“…Our approach achieves 50.1% and 48.7% time savings with Bjøntegaard delta bit rate (BDBR) increases of 1.2% and 1.0% compared to the HEVC/H.265 reference software for random access and low delay configurations, respectively. …”
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Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride by Andrei A. Gismatulin, Gennadiy N. Kamaev, Vladimir A. Volodin, Vladimir A. Gritsenko

“…A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. …”
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Quantum Algorithm for Position Weight Matrix Matching by Koichi Miyamoto, Naoki Yamamoto, Yasubumi Sakakibara

“…As a drawback, these algorithms use quantum random access memories, and their initialization takes <inline-formula><tex-math notation="LaTeX">$O(n)$</tex-math></inline-formula> time. …”
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Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping... by Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma

“…Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. …”
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Endurance of 2 Mbit Based BEOL Integrated ReRAM by Nils Kopperberg, Stefan Wiefels, Karl Hofmann, Jan Otterstedt, Dirk J. Wouters, Rainer Waser, Stephan Menzel

“…In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. …”
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A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification by Jin-Woo Kim, Jun-Seok Beom, Hong-Sub Lee, Nam-Seog Kim

“…Resistive random access memory (RRAM), a new non-volatile memory, enables hardware accelerators based on in-memory computing with improved throughput and energy efficiency, enabling machine learning on-the-fly inference at the edge. …”
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Optoelectronic Resistive Memory Based on Lead‐Free Cs2AgBiBr6 Double Perovskite for Artificial Self‐Storage Visual Sensors by Haibo Ye, Zhiyong Liu, Bo Sun, Xuning Zhang, Tielin Shi, Guanglan Liao

“…In this work, simple two‐terminal optoelectronic resistive random access memory (ORRAM) devices are demonstrated based on lead‐free Cs2AgBiBr6 perovskite, exhibiting a unique optoelectronic resistive characteristic that can be reset by UV light illumination. …”
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Fabrication and characterization of TiOx based single-cell memristive devices by Bünyamin Özkal, Sinan Kazan, Özgül Karataş, Gökhan Ekinci, Lütfi Arda, Bulat Z Rameev

“…This type of switching behavior is applicable in random access memories. Experimental current–voltage behavior in the form of pinched hysteresis loop of the films have been modelled with generalized memristor model.…”
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Bitline Charge Sharing Suppressed Bitline and Cell Supply Collapse Assists for Energy-Efficient 6T SRAM by Kiryong Kim, Tae Woo Oh, Seong-Ook Jung

“…The simulation results using 22-nm FinFET technology show that static random access memory (SRAM) using BCS RA and WA consumes much less read and write energy than SRAMs using state-of-the-art assists while achieving a comparable minimum operating <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {DD}}$ </tex-math></inline-formula> to SRAMs using state-of-the-art assists. …”
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Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects by Nilson Maciel, Elaine C. Marques, Lirida Naviner, Hao Cai, Jun Yang

“…The reliability of VCMA-MTJ-based magnetoelectric random access memory (MeRAM) can be impacted by environmental disturbances because a radiation strike on the access transistor could introduce write and read failures in 1T-1MTJ MeRAM bit-cells. …”
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Interface engineering for substantial performance enhancement in epitaxial all-perovskite oxide capacitors by Jeongil Bang, Jaeho Lee, Eun Cheol Do, Hyungjun Kim, Byunghoon Na, Haeryong Kim, Bo-Eun Park, Jooho Lee, Che-Heung Kim, Ho Won Jang, Yongsung Kim

“…Abstract Capacitors based on ABO3-type perovskite oxides show considerable promise for overcoming the limitations of nanoscale integration with dynamic random access memory (DRAM) devices. Among the thermodynamically stable perovskite oxides, titanates (ATiO3) exhibit high dielectric permittivity in metal–insulator–metal (MIM) configurations. …”
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Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution by Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, Cheol Seong Hwang

“…The sample showed highly useful current-voltage characteristics as the selector in cross-bar array resistance switching random access memory. The long-term (order of second) variation in the leakage current when the Pt electrode was positively biased was attributed to the field-induced migration of oxygen vacancies between the interior of the Al2O3 and the 2DEG region. …”
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Excellent Bipolar Resistive Switching Characteristics of Bi₄Ti₃O₁₂ Thin Films Prepared via Sol-Gel Process by He-Chun Zhou, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang

“…Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.…”
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Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning by Yijun Li, Jianshi Tang, Bin Gao, Jian Yao, Anjunyi Fan, Bonan Yan, Yuchao Yang, Yue Xi, Yuankun Li, Jiaming Li, Wen Sun, Yiwei Du, Zhengwu Liu, Qingtian Zhang, Song Qiu, Qingwen Li, He Qian, Huaqiang Wu

“…Abstract In this work, we report the monolithic three-dimensional integration (M3D) of hybrid memory architecture based on resistive random-access memory (RRAM), named M3D-LIME. The chip featured three key functional layers: the first was Si complementary metal-oxide-semiconductor (CMOS) for control logic; the second was computing-in-memory (CIM) layer with HfAlOx-based analog RRAM array to implement neural networks for feature extractions; the third was on-chip buffer and ternary content-addressable memory (TCAM) array for template storing and matching, based on Ta2O5-based binary RRAM and carbon nanotube field-effect transistor (CNTFET). …”
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Utilizing tertiary butyl iodide as an effective film quality enhancing agent for atomic layer deposition of HfO2 dielectric thin films by Kok Chew Tan, Jaesun Jung, Sojung Kim, Jongmoon Kim, Seok Jong Lee, Young-Soo Park

“…The deposited HfO2 film has superior leakage properties of 5.18 × 10−8 A/cm2 at 3 MV/cm, which is below the dynamic random access memory leakage current limit.…”
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An Integrated Real-Time FMCW Radar Baseband Processor in 40-nm CMOS by Mohan Guo, Dixian Zhao, Qisong Wu, Jiarui Wu, Diwei Li, Peng Zhang

“…On the basis of the theoretical analysis and systematic considerations, a pipelined baseband architecture with internal single-port static random access memory (SRAM) is employed. The baseband processor is mainly composed of two-dimensional fast Fourier transform (2D-FFT), two-dimensional constant false alarm rate (2D-CFAR), digital beam-forming (DBF), and memory control modules. …”
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High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits by Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Hung-Chun Chen, Tung-Ying Hsieh, Wei-Sheng Lin, Ming-Hsuan Kao, Chiu-Hao Chen, Jie-Yi Yao, Yi-Ling Jian, Chiung-Chih Hsu, Kun-Lin Lin, Chang-Hong Shen, Yu-Lun Chueh, Jia-Min Shieh

“…In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at VDD = 1.0 V was demonstrated. …”
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Resistive memory based on single-crystalline black phosphorus flake/HfOx structure by Xiaoyuan Yan, Xueting Wang, Boran Xing, Ying Yu, Jiadong Yao, Xinyue Niu, Mengge Li, Jian Sha, Yewu Wang

“…Two-dimensional materials are gaining more and more attention in the field of electronic devices because of their unique advantages, such as high crystalline quality and clean and flat contact planes; compared to traditional materials, the use of two-dimensional materials as the working layer of a resistive random-access memory (RRAM) has the potential to further reduce the device size and enhance its performance. …”
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Evaluation of Fully Automated Electrochemiluminescence Immunoassay for Rapid Detection of Hepatitis B surface antigen and antibodies to Hepatitis C Virus by Ola Wasfi, Nehad Mahdy

“…The rapid turnaround time, random access, full automation makes it an effective assay system for clinical laboratory diagnosis of HCV and HBV infections, especially if the results can be correlated with the patients’ clinical profiles. …”

Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research by Cheng Gu, George Belev, Haonan Tian, Shuting Shi, Issam Nofal, Shijie Wen, Li Chen

“…To verify this mapping system, sensitivity maps were generated for static random access memory (SRAM) built with 65 nm technology and for commercial operational amplifiers (op-amps). …”
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