Resistive Switching in Graphene Oxide by Francisco J. Romero, Alejando Toral, Alberto Medina-Rull, Carmen Lucia Moraila-Martinez, Diego P. Morales, Akiko Ohata, Andres Godoy, Francisco G. Ruiz, Noel Rodriguez

“…This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive switching materials are gathering way to new forms of analog computation. …”
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Pseudo-transistors for emerging neuromorphic electronics by Jingwei Fu, Jie Wang, Xiang He, Jianyu Ming, Le Wang, Yiru Wang, He Shao, Chaoyue Zheng, Linghai Xie, Haifeng Ling

“…The working mechanisms, device structures and materials of three typical pseudo-transistors, including tunneling random access memory (TRAM), memflash and memtransistor, are comprehensively discussed. …”
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Probabilistic Circuit Implementation Based on P-Bits Using the Intrinsic Random Property of RRAM and P-Bit Multiplexing Strategy by Yixuan Liu, Qiao Hu, Qiqiao Wu, Xuanzhi Liu, Yulin Zhao, Donglin Zhang, Zhongze Han, Jinhui Cheng, Qingting Ding, Yongkang Han, Bo Peng, Haijun Jiang, Xiaoyong Xue, Hangbing Lv, Jianguo Yang

“…This paper proposes a true random number generator (TRNG) based on resistive random-access memory (RRAM), which is combined with an activation function implemented by a piecewise linear function to form a standard p-bit cell, one of the most important parts of a p-circuit. …”
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A newly developed transparent and flexible one-transistor memory device using advanced nanomaterials for medical and artificial intelligence applications by Dai M, Hu Y, Huo C, Webster TJ, Guo L

“…Due to more complex algorithms and architectures required by neuroscience and other medical applications, various memory structures have been widely proposed and investigated by involving nanomaterials, such as memristors.Methods: Due to reliability issues of mass production, the dominant memory devices in many computers are still dynamic random access memory (DRAM). A DRAM has one transistor and one capacitor, and so it contains two devices and requires a more compact design to replace.Results: A one-transistor memory device which is more compact than DRAM is proposed. …”
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Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures by Takayuki Nozaki, Tomohiro Ichinose, Jun Uzuhashi, Tatsuya Yamamoto, Makoto Konoto, Kay Yakushiji, Tadakatsu Ohkubo, Shinji Yuasa

“…The developed techniques for the growth of ultrathin ferromagnet and oxide thin films using cryogenic temperature deposition will contribute to the development of high-performance spintronic devices, such as voltage-controlled magnetoresistive random access memories.…”
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Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO₂-Based RRAM Arrays by Eduardo Pérez, Óscar González Ossorio, Salvador Dueñas, Helena Castán, Héctor García, Christian Wenger

“…A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. …”
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IoT-enabled directed acyclic graph in spark cluster by Jahwan Koo, Nawab Muhammad Faseeh Qureshi, Isma Farah Siddiqui, Asad Abbas, Ali Kashif Bashir

“…Thus, the Spark cluster that processes Resilient Distributed Dataset (RDD) in a fast-pace using Random access memory (RAM) defies expected robustness in processing IoT streams in the distributed computing environment. …”
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Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties by Heecheol Shin, Hyobin Choi, Jaeseong Lim, Wanggon Lee, Kumar Mohit, Younsoo Kim, Hyung-Suk Jung, Hanjin Lim, Hyungtak Seo

“…The continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the successful suppression of its leakage current to maintain desired levels of charge storage and retention. …”
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Energy efficient reconfigurable SRAM using data-dependency by Duan, Chuhong

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Big data analytics made affordable using hardware-accelerated flash storage by Jun, Sang-Woo

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Magnetic domain wall devices : from physics to system level application by Siddiqui, Saima Afroz.

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Quantitative study on current-induced effects in an antiferromagnetic insulator/Pt bilayer film by Zhang, Pengxiang(Electrical engineer and computer scienctist).

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Neuro-RAM unit with applications to similarity testing and compression in spiking neural networks by Lynch, Nancy, Parter, Merav, Musco, Cameron

“…At the heart of our solution is the design of a t-round neural random access memory, or indexing network, which we call a neuro-RAM. …”
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Ultra-dynamic voltage scalable (U-DVS) SRAM design considerations by Sinangil, Mahmut E. (Mahmut Ersin)

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Labyrinthos by Garvey, Gregory Patrick

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Practical algorithms for distributed network control by Jones, Nathaniel Matthew

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Integrated Circuits Based on Bilayer MoS by Wang, Han, Yu, Lili, Lee, Yi-Hsien, Shi, Yumeng, Hsu, Allen Long, Chin, Matthew L., Li, Lain-Jong, Dubey, Madan, Kong, Jing, Palacios, Tomas

“…This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. …”
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BlueDBM: An Appliance for Big Data Analytics by Jun, SangWoo, Liu, Ming Gang, Lee, Sungjin, Hicks, Jamey, Ankcorn, John, King, Myron Decker, Xu, Shuotao, Arvind, Arvind

“…Complex data queries, because of their need for random accesses, have proven to be slow unless all the data can be accommodated in DRAM. …”
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Unimodal model-based inter mode decision for high efficiency video coding by Zeng, Huanqiang, Xiang, Wenjie, Chen, Jing, Cai, Canhui, Ni, Zhangkai, Ma, Kai-Kuang

“…The extensive simulation results have shown that the proposed UMIMD algorithm is able to individually achieve a significant reduction on computational complexity at the encoder by 61.9% and 64.2% on average while incurring only 1.7% and 2.1% increment on the total Bjontegaard delta bit rate (BDBR) for the low delay and random access test conditions, compared with the exhaustive mode decision in the HEVC. …”
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3D geometric engineering of the double wedge-like electrodes for filament-type RRAM device performance improvement by Sun, Jianxun, Li, Yuanbo, Ye, Yiyang, Zhang, Jun, Chong, Gang Yih, Tan, Juan Boon, Liu, Zhen, Chen, Tupei

“…The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. …”
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